High efficiency power amplifier using HITFET driver circuit

• US 5,939,941 A
• Filed: 09/25/1997
• Issued: 08/17/1999
• Est. Priority Date: 09/25/1997
• Status: Expired due to Term

• Current Assignee: Motorola Solutions, Inc.
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Maracas, George N., Nair, Vijay K., Goronkin, Herbert
• Primary Examiner(s): Mottola, Steven J.
• Application Number:
  US08/937,775
• Time in Patent Office: 691 Days
• Field of Search: 330/207 A, 330/251, 330/277, 330/307, 333/217
• US Class Current: 330/251
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 29/7783 using III-V semiconductor material
• CPC Class Codes: H01L 29/882 Resonant tunneling diodes, i.e. RTD, RTBD
• CPC Class Codes: H03F 3/193 with field-effect devices H03F3/195 takes precedence

Abstract

A high efficiency power amplifier includes an integrated circuit with a heterojunction interband tunneling field effect transistor (HITFET) amplifier coupled to receive high frequency (into the GHz) RF signals. The HITFET amplifier is constructed to receive the RF signal with a given frequency at the input terminal and to produce a substantially square wave signal at the given frequency at an output terminal in response to the RF signal applied to the input terminal. The gate of a switching FET connected as a class E amplifier is coupled to the output of the HITFET for receiving the square wave signal and an impedance matching output circuit is coupled to the drain of the switching FET.

Claims

1. A high efficiency power amplifier comprising:

a negative differential resistance amplifier having an input terminal and an output terminal, the negative differential resistance amplifier being constructed to receive a signal with a given frequency at the input terminal and to produce a substantially square wave signal with the given frequency at the output terminal;

a semiconductor switch having a control input and a pair of current carrying terminals, the control input being coupled to the output terminal of the negative differential resistance amplifier for receiving the substantially square wave signal; and

an impedance matching output circuit coupled to one of the current carrying terminals of the semiconductor switch.

2. A high efficiency power amplifier as claimed in claim 1 wherein the negative differential resistance amplifier includes a heterojunction interband tunneling field effect transistor.

3. A high efficiency power amplifier as claimed in claim 1 wherein the negative differential resistance amplifier includes a three terminal transistor with a negative differential resistance diode coupled to a first terminal of the three terminal transistor and an inductance coupled to a second terminal of the three terminal transistor.

4. A high efficiency power amplifier as claimed in claim 3 wherein the negative differential resistance diode is an interband tunneling diode.

5. A high efficiency power amplifier as claimed in claim 1 wherein the negative differential resistance amplifier includes a field effect transistor having gate, drain and source terminals, a negative differential resistance diode coupled to the gate terminal of the transistor, a first inductance coupled to the gate terminal of the transistor, a second inductance coupled to the drain terminal of the transistor, and operating voltages which set the amplifier to operating in a negative differential resistance region of the diode connected through the first and second inductances to the gate and drain terminals respectively.

6. A high efficiency power amplifier as claimed in claim 1 wherein the semiconductor switch includes a field effect transistor.

7. A high efficiency power amplifier as claimed in claim 1 wherein the negative differential resistance amplifier and the semiconductor switch are integrated on a common substrate.

8. A high efficiency power amplifier as claimed in claim 7 wherein the impedance matching output circuit is integrated on a common substrate with the negative differential resistance amplifier and the semiconductor switch.

9. A high efficiency power amplifier as claimed in claim 1 wherein the input terminal of the negative differential resistance amplifier is constructed to receive an RF signal with a frequency in the range of high MHz to GHz.

10. A high efficiency power amplifier comprising:

an integrated circuit including

a heterojunction interband tunneling field effect transistor amplifier having an input terminal for receiving RF signals and an output terminal, the heterojunction interband tunneling field effect transistor amplifier being constructed to receive an RF signal with a given frequency at the input terminal and to produce a substantially square wave signal with the given frequency at the output terminal,

a semiconductor switch including a field effect transistor having a gate terminal and drain and source terminals, the gate terminal being coupled to the output terminal of the heterojunction interband tunneling field effect transistor amplifier for receiving the substantially square wave signal; and

an impedance matching output circuit coupled to the drain terminal of the field effect transistor.

11. A high efficiency power amplifier as claimed in claim 10 wherein the impedance matching output circuit is included in the integrated circuit with the heterojunction interband tunneling field effect transistor amplifier and the semiconductor switch.

12. A high efficiency power amplifier as claimed in claim 10 wherein the input terminal of the heterojunction interband tunneling field effect transistor amplifier is constructed to receive an RF signal with a frequency in the range of high MHz to GHz.

13. A high efficiency power amplifier comprising:

a negative differential resistance amplifier including a field effect transistor having an RF input gate terminal and drain and source terminals, a negative differential resistance diode coupled to the RF input gate terminal of the transistor, a first inductance coupled to the RF input gate terminal of the transistor, a second inductance coupled to the drain terminal of the transistor, and operating voltages which set the amplifier to operating in a negative differential resistance region of the diode connected through the first and second inductances to the RF input gate terminal and the drain terminal respectively, the negative differential resistance amplifier being constructed to receive a signal with a given frequency at the RF input gate terminal and to produce a substantially square wave signal with the given frequency at an output terminal;

a semiconductor switch including a switching field effect transistor having a switching gate terminal and drain and source terminals, the switching gate terminal being coupled to the output terminal of the negative differential resistance amplifier for receiving the substantially square wave signal; and

an impedance matching output circuit coupled to the drain terminal of the switching field effect transistor.

14. A high efficiency power amplifier as claimed in claim 13 wherein the negative differential resistance amplifier and the semiconductor switch are integrated on a common substrate.

15. A high efficiency power amplifier as claimed in claim 14 wherein the impedance matching output circuit is included in the integrated circuit with the negative differential resistance amplifier and the semiconductor switch.

16. A high efficiency power amplifier as claimed in claim 13 wherein the input terminal of the negative differential resistance amplifier is constructed to receive an RF signal with a frequency in the range of high MHz to GHz.