LED display packaging with substrate removal and method of fabrication

• US 5,940,683 A
• Filed: 01/18/1996
• Issued: 08/17/1999
• Est. Priority Date: 01/18/1996
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Holm, Paige M., Shieh, Chan-Long, Moyer, Curtis D.
• Primary Examiner(s): Picardat, Kevin M.
• Assistant Examiner(s): COLLINS, DEVEN M
• Application Number:
  US08/588,470
• Time in Patent Office: 1,307 Days
• Field of Search: 345/39, 345/41, 345/44, 345/46, 345/82, 438/26, 438/23
• US Class Current: 438/23
• CPC Class Codes: G09F 9/3026 Video wall, i.e. stackable semiconductor matrix display modules video wall control systems G06F3/1446, G09G2300/026
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a LED array display chip, fabricated of an array of LEDs, formed on a substrate, having connection pads positioned about the perimeter of the LED array display chip, a separate silicon driver chip having connection pads routed to an uppermost surface, positioned to cooperatively engage those of the display chip when properly registered and interconnected using wafer level processing technology. The display chip being flip chip mounted to the driver chip and having a layer of interchip bonding dielectric positioned between the space defined by the display chip and the driver chip. The LED display and driver chip package subsequently having selectively removed the substrate onto which the LED array was initially formed, thereby exposing the connection pads of the display chip and a remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer. The light emitted from the LED display chip, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the display chip.

Claims

1. A method of fabricating a light emitting diode display package comprising the steps of:

providing a display chip, having a gallium arsenide (GaAs) substrate with a major surface;

forming an array of light emitting diodes on the major surface of the gallium arsenide (GaAs) substrate;

providing a driver chip formed on a silicon substrate;

flip chip mounting the display chip to the driver chip;

selectively removing the gallium arsenide (GaAs) substrate from the display chip thereby exposing an etch stop layer; and

electrically interfacing the display chip to the driver chip utilizing a plurality of fan out interconnects positioned about a perimeter of the driver chip and the display chip.

2. A method of fabricating a light emitting diode display package as claimed in claim 1 wherein the step of electrically interfacing the display chip to the driver chip includes forming a plurality of bond pads, in electrical cooperation with the array of light emitting diodes and forming a plurality of bond pads, in electrical cooperation with the drive components, cooperatively positioned to engage the bond pads of the array of light emitting diodes.

3. A method of fabricating a light emitting diode display package as claimed in claim 2 wherein the step of forming a plurality of bond pads, in electrical cooperation with the array of light emitting diodes, includes positioning the bond pads about a perimeter of a display area, defined by the array of light emitting diodes of the display chip, and the step of forming a plurality of bond pads, in electrical cooperation with the drive components, includes routing the bond pads to an uppermost surface of the driver chip, cooperatively positioned to engage the bond pads of the array of light emitting diodes utilizing metal interchip interconnections.

4. A method of fabricating a light emitting diode display package comprising the steps of:

providing a light emitting diode chip having a gallium arsenide (GaAs) substrate with a major surface;

forming an array of light emitting diodes on the major surface of the gallium arsenide (GaAs) substrate, thereby defining a display area;

forming a plurality of bond pads about a perimeter of the display chip, in electrical cooperation with the array of light emitting diodes;

providing a driver chip formed on a silicon substrate, having a plurality of drive components formed therein;

forming a plurality of bond pads about a perimeter of the driver chip, in electrical cooperation with the drive components, cooperatively positioned to engage the bond pads of the array of light emitting diodes;

flip chip mounting the display chip to the driver chip;

selectively removing the gallium arsenide (GaAs) substrate from the light emitting diode chip, thereby exposing an etch stop layer; and

interfacing the plurality of bond pads, in electrical cooperation with the array of light emitting diodes, to the plurality of bond pads, in electrical cooperation with the drive components of the driver chip, thereby electrically connecting the light emitting diode chip to the driver chip.

5. A method of fabricating a light emitting diode display package as claimed in claim 4 wherein the step of forming a plurality of bond pads, in electrical cooperation with the array of light emitting diodes, includes positioning the bond pads about a perimeter of the display area and the step of forming a plurality of bond pads, in electrical cooperation with the drive components, includes routing the bond pads to an uppermost surface of the driver chip, cooperatively positioned to engage the bond pads of the array of light emitting diodes utilizing metal interchip interconnections.

6. A method of fabricating a light emitting diode display package as claimed in claim 4 wherein the array of light emitting diodes formed on the major surface of the substrate is comprised of a plurality of indium-gallium-aluminum-phosphide (InGaAlP) light emitting diode structures.

7. A method of fabricating a light emitting diode display package as claimed in claim 6 wherein the step of forming an array of light emitting diodes further includes forming the etch stop layer on the major surface of the gallium arsenide (GaAs) substrate, forming a transparent conductive layer of material on the etch stop layer, forming a first carrier confinement layer on the conductive layer, forming an active layer on the first carrier confinement layer, forming a second carrier confinement layer on the active layer, selectively forming a conductive cap layer on the second carrier confinement layer to provide exposed surface areas of the second confinement layer, thereby defining exposed row areas and exposed column areas, with an array of diode light emitting areas covered by the conductive cap layer positioned in rows and columns therebetween.

8. A method of fabricating a light emitting diode display package as claimed in claim 5 wherein the step of forming an array of light emitting diodes further includes forming a plurality of LED contact metallizations, comprised of a reflective metal.

9. A method of fabricating a light emitting diode display package as claimed in claim 4 wherein the interfacing of the plurality of bond pads, in electrical cooperation with the array of light emitting diodes, to the plurality of bond pads in electrical cooperation with the driver device includes wafer level processing techniques.

10. A method of fabricating a light emitting diode display package as claimed in claim 9 wherein the interfacing of the plurality of bond pads further includes depositing a layer of interchip bonding dielectric between the light emitting diode chip and the driver chip.

11. A method of fabricating a light emitting diode display package as claimed in claim 4 wherein the step of removing the gallium arsenide (GaAs) substrate from the light emitting diode chip includes selectively etching away the substrate, thereby leaving an indium-gallium-aluminum-phosphide epilayer of the light emitting diode chip exposed.

12. A method of fabricating a light emitting diode display package as claimed in claim 4 wherein the step of removing the gallium arsenide (GaAs) substrate from the light emitting diode chip includes a release layer, whereby the release layer is selectively etched away, leaving an indium-gallium-aluminum-phosphide epilayer of the light emitting diode chip exposed.

13. A method of fabricating a light emitting diode display package comprising the steps of:

providing a display chip having a gallium arsenide (GaAs) substrate with a major surface;

forming an array of indium gallium aluminum phosphide (InGaAlP) light emitting diodes on the major surface of the gallium arsenide (GaAs) substrate, thereby defining a display area;

forming a plurality of bond pads, in electrical cooperation with the array of light emitting diodes, positioned about a perimeter of the display area;

forming a plurality of row and column connections, routed to the plurality of bond pads in electrical cooperation with the array of light emitting diodes;

providing a driver chip formed on a silicon substrate, having a plurality of drive components formed therein;

forming a plurality of bond pads, in electrical cooperation with the drive components, routed to an uppermost surface of the driver device, cooperatively positioned to engage the bond pads of the array of light emitting diodes;

flip chip mounting the display chip to the driver chip in flip chip orientation;

depositing a layer of non-conductive material within an area defined between the display chip and the driver chip;

selectively removing the gallium arsenide (GaAs) substrate from the display chip thereby exposing an indium-gallium-aluminum-phosphide epilayer of the display chip; and

interconnecting the plurality of bond pads, in electrical cooperation with the array of light emitting diodes of the display chip, to the plurality of bond pads, in electrical cooperation with the drive components of the driver chip, using wafer level processing, thereby electrically connecting the display chip to the driver chip.

14. A method of fabricating a light emitting diode display package as claimed in claim 13 wherein the array of light emitting diodes formed on the major surface of the gallium arsenide (GaAs) substrate is comprised of a plurality of indium-gallium-aluminum-phosphide (InGaAlP) light emitting diode structures.

15. A method of fabricating a light emitting diode display package as claimed in claim 14 wherein the step of forming an array of light emitting diodes further includes forming the indium-gallium-aluminum-phosphide epilayer on the major surface of the gallium arsenide (GaAs) substrate, forming a first carrier confinement layer on the conductive layer, forming an active layer on the first carrier confinement layer, forming a second carrier confinement layer on the active layer, selectively forming a conductive cap layer on the second carrier confinement layer to provide exposed surface areas of the second confinement layer, thereby defining exposed row areas and exposed column areas, with an array of diode light emitting areas covered by the conductive cap layer positioned in rows and columns therebetween.

16. A method of fabricating a light emitting diode display package as claimed in claim 13 wherein the step of forming an array of light emitting diodes further includes forming a plurality of LED contact metallizations, comprised of a reflective metal.

17. A method of fabricating a light emitting diode display package as claimed in claim 13 wherein the step of depositing a layer of non-conductive material within an area defined between the display chip and the driver chip includes depositing a layer of interchip bonding dielectric adhesive.

18. A method of fabricating a light emitting diode display package as claimed in claim 13 wherein the step of removing the gallium arsenide (GaAs) substrate from the display chip includes selectively etching away the gallium arsenide (GaAs) substrate, thereby leaving the indium-gallium-aluminum-phosphide epilayer of the display chip exposed.

19. A method of fabricating a light emitting diode display package as claimed in claim 13 wherein the step of removing the gallium arsenide (GaAs) substrate from the display chip includes a release layer, whereby the release layer is selectively etched away, leaving the indium-gallium-aluminum-phosphide epilayer of the light emitting diode chip exposed.

20. A method of fabricating a light emitting diode display package as claimed in claim 13 wherein the step of interconnecting the plurality of bond pads in electrical cooperation includes etching a plurality of vias into the non-conductive material to expose the bond pads in electrical cooperation with the drive components of the driver chip.

21. A method of fabricating a light emitting diode display package comprising the steps of:

providing a substrate of gallium arsenide (GaAs) with a major surface;

forming an array of indium gallium aluminum phosphide (InGaAlP) light emitting diodes on the major surface of the substrate, thereby forming a light emitting diode device having a defined display area;

forming a plurality of bond pads in electrical cooperation with the array of light emitting diodes, positioned about a perimeter of the display area;

forming a plurality of electrically isolated row and column connections, routed to the plurality of bond pads in electrical cooperation with the array of light emitting diodes;

providing a separate driver device formed on a silicon substrate, having a plurality of drive components formed therein;

forming a plurality of bond pads in electrical cooperation with the drive components, routed to an uppermost surface of the driver device;

depositing a layer of interchip bonding dielectric adhesive within an area defined between the display chip and the driver chip;

selectively removing the gallium arsenide (GaAs) substrate from the light emitting diode device, thereby leaving an exposed epilayer; and

interconnecting the plurality of bond pads in electrical cooperation with the light emitting diodes, in flip chip attachment to the plurality of bond pads in electrical cooperation with the drive components of the driver device, thereby electrically connecting the light emitting diode device to the driver device utilizing wafer level processing.

22. A method of fabricating a light emitting diode display package as claimed in claim 21 wherein the array of light emitting diodes is comprised of a plurality of indium-gallium-aluminum-phosphide (InGaAlP) light emitting diode structures.

23. A method of fabricating a light emitting diode display package as claimed in claim 21 wherein the step of forming an array of light emitting diodes on the major surface of the substrate, includes forming a plurality of layers of material on the substrate, including at least an etch stop layer of material, supported by the major surface of the substrate, a conductive layer of material on the etch stop layer, a first carrier confinement layer on the conductive layer, an active layer on the first carrier confinement layer, and a second carrier confinement layer on the active layer and implanting impurities in the plurality of layers of material into a plurality of isolated light emitting diodes positioned in an array of rows and columns and to form a plurality of vertical conductors through at least some of the plurality of layers to provide surface contacts to each diode in the array.