Method for sputtering compounds on a substrate
First Claim
1. A method for deposition of a film comprising a compound by sputtering means onto a substrate, which film is conducting or non-conducting and which film includes a metallic or semi-conducting element derived from a metallic or semi-conducting sputtering target, said metallic or semi-conducting element being combined with at least one additional element in the form of a reactive gas to form the compound, said method comprising the steps of:
- (a) providing a target as a cathode in a vacuum chamber of the metal or semi-conductor to be combined with the reactive gas to form the compound;
(b) providing an inert gas in the chamber that becomes ionized and bombards the target to release metal or semi-conductor atoms and ions therefrom into the chamber;
(c) providing the substrate in the chamber to be coated with the compound comprised of the reactive gas and the metal or semi-conductor;
(d) providing an anode in the chamber;
(e) admitting the reactive gas into the chamber, said reactive gas capable of forming the compound in combination with atoms and ions from the target;
(f) supplying pulsed, direct current, electrical power to the target to effect ionization of the inert gas and thereby effect bombardment of the target to release atoms and ions from the target into the chamber for combination with the reactive gas; and
(g) controlling the admission and reaction of the reactive gas by;
(i) maintaining constant power to the target;
(ii) measuring substantially instantaneously a target voltage and providing a first voltage measurement signal for controlling the rate of admission of the reactive gas to the chamber to achieve partial pressure reflective of a compound composition having defined physical characteristics, said first voltage measurement signal comprising an independent measurement indicative of the partial pressure in the system which is not reactive gas species specific, which provides a signal characteristic of the optimal range of partial pressure for reaction of the reactive gas;
(iii) simultaneously measuring the species specific partial pressure of the reactive gas and providing a second signal for controlling the rate of admission of the reactive gas to the chamber and to control the partial pressure range for measurement and control by the first voltage measurement signal to achieve partial pressure control reflective of the said compound composition, both said first voltage measurement signal and said second signal being used to control admission of reactive gas to the chamber simultaneously, said first voltage measurement signal being measured at a faster rate than the second signal; and
(iv) simultaneously activating the reactive gas at or near the substrate by introducing a localized energy input thereto.
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Abstract
A method and apparatus for monitoring and controlling deposition of metal, insulating compounds or other compounds on a substrate by sputtering techniques includes maintaining pulsed, constant, direct current power to the target, sensing the voltage of the target material used in the process, simultaneously rapidly sensing the partial pressure of the reactive gas, and simultaneously biasing the substrate to activate the reactive gas or otherwise energizing the reactive gas in the vicinity of the substrate. An apparatus for practicing the invention is also disclosed.
117 Citations
13 Claims
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1. A method for deposition of a film comprising a compound by sputtering means onto a substrate, which film is conducting or non-conducting and which film includes a metallic or semi-conducting element derived from a metallic or semi-conducting sputtering target, said metallic or semi-conducting element being combined with at least one additional element in the form of a reactive gas to form the compound, said method comprising the steps of:
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(a) providing a target as a cathode in a vacuum chamber of the metal or semi-conductor to be combined with the reactive gas to form the compound; (b) providing an inert gas in the chamber that becomes ionized and bombards the target to release metal or semi-conductor atoms and ions therefrom into the chamber; (c) providing the substrate in the chamber to be coated with the compound comprised of the reactive gas and the metal or semi-conductor; (d) providing an anode in the chamber; (e) admitting the reactive gas into the chamber, said reactive gas capable of forming the compound in combination with atoms and ions from the target; (f) supplying pulsed, direct current, electrical power to the target to effect ionization of the inert gas and thereby effect bombardment of the target to release atoms and ions from the target into the chamber for combination with the reactive gas; and (g) controlling the admission and reaction of the reactive gas by; (i) maintaining constant power to the target; (ii) measuring substantially instantaneously a target voltage and providing a first voltage measurement signal for controlling the rate of admission of the reactive gas to the chamber to achieve partial pressure reflective of a compound composition having defined physical characteristics, said first voltage measurement signal comprising an independent measurement indicative of the partial pressure in the system which is not reactive gas species specific, which provides a signal characteristic of the optimal range of partial pressure for reaction of the reactive gas; (iii) simultaneously measuring the species specific partial pressure of the reactive gas and providing a second signal for controlling the rate of admission of the reactive gas to the chamber and to control the partial pressure range for measurement and control by the first voltage measurement signal to achieve partial pressure control reflective of the said compound composition, both said first voltage measurement signal and said second signal being used to control admission of reactive gas to the chamber simultaneously, said first voltage measurement signal being measured at a faster rate than the second signal; and (iv) simultaneously activating the reactive gas at or near the substrate by introducing a localized energy input thereto. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. Apparatus for deposition of a film comprising a compound by sputtering means onto a substrate, which film is conducting or non-conducting and which film includes a metallic or semi-conducting element derived from a metallic or semi-conducting sputtering target, said metallic or semi-conducting element being combined with at least one additional element in the form of a reactive gas to form the compound, said apparatus comprising, in combination:
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(a) a vacuum chamber (b) a target as a cathode in the vacuum chamber of the metal or semi-conductor to be combined with the reactive gas to form the compound; (c) an inert gas source to the chamber to supply inert gas that becomes ionized and bombards the target to release metal or semi-conductor atoms and ions therefrom into the chamber; (d) a substrate support in the chamber for a substrate to be coated with the compound; (e) an anode in the chamber; (f) a reactive gas source to the chamber, said reactive gas capable of forming the compound with atoms and ions from the target for coating the substrate; (g) means to supply pulsed, direct current, electrical power to the target to effect ionization of the inert gas and to effect bombardment of the target to release atoms and ions from the target into the chamber; and (h) means for controlling the admission and reaction of the reactive gas including; (i) means for maintaining constant power to the target; (ii) means for measuring the target voltage to provide a first signal for controlling the rate of admission of the reactive gas to the chamber to achieve partial pressure reflective of a compound composition having defined physical characteristics, said first signal measuring means comprising an independent measurement indicative of the partial pressure in the system which is not reactive gas species specific and which provides a signal characteristic of the optimal range of partial pressure for reaction of the reactive gas; (iii) means for simultaneously measuring the species specific partial pressure of the reactive gas to provide a second signal for controlling the rate of admission of the reactive gas to the chamber within the optimal range defined by the means for providing the first signal to control partial pressure to be optimally reflective of the said compound composition, both said first and second signals being used simultaneously to control admission of reactive gas to the chamber, said means for controlling providing the first signal at a faster rate than the second signal; and (iv) means for simultaneously activating the reactive gas at or near the substrate by introducing a localized energy input thereto.
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Specification