Mars optical modulators

• US 5,943,155 A
• Filed: 08/12/1998
• Issued: 08/24/1999
• Est. Priority Date: 08/12/1998
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Goossen, Keith Wayne
• Primary Examiner(s): Epps, Georgia
• Assistant Examiner(s): Burke, Margaret
• Application Number:
  US09/133,065
• Time in Patent Office: 377 Days
• Field of Search: 359/223, 359/224, 359/290, 359/291, 359/295, 359/318, 359/248, 359/247, 359/245
• US Class Current: 359/247
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 26/02 for controlling the intensity of light G02B26/004 takes precedence

Abstract

The specification describes a double poly Mechanical Anti-Reflection Switch (MARS) device in which transition layers of SiN_x are provided on either side of the air gap, and the thickness ratio of the two transition layers is adjusted to provide a tradeoff between the insertion loss of the device and the optical bandwidth.

Claims

1. An electrooptic device comprising:

(a) a substrate having a refractive index η

, and having at least two layers (i) and (ii) on the surface thereof, wherein

(i) is a layer having a thickness t₁ greater than 50 Angstroms, and an index of refraction approximately equal to η

^1/2, and

(ii) is a layer with a refractive index η

, and a thickness t₂,

(b) a membrane having an optically transparent portion and comprising at least two layers (iii) and (iv), wherein

layer (iii) is a layer with a refractive index η

, and a thickness t₃, and

layer (iv) is a layer with a refractive index approximately equal to

η

^1/2, and a thickness t₄, where t₄ is greater than 50 Angstroms,

(c) means for directing a beam of light on said optically transparent portion of said membrane, said light having a wavelength λ

, where λ and

t₁ and t₄ are related by;

space="preserve" listing-type="equation">t.sub.1 =(λ

/4η

.sup.1/2)t.sub.4

(d) a flexible support for positioning the optically transparent portion of said membrane at a first position spaced from said substrate and defining an air gap d₁ between said layer (ii) and said layer (iii), and a second position spaced from said substrate defining an air gap d₂ between said layer (ii) and layer (iii), and

(e) means for applying an electrical bias across said air gap to optically switch said optically transparent portion of said membrane from said first position to said second position.

2. The modulator of claim 1 wherein d₁ and d₂ are approximately equal to mλ

/4, and m is an odd integer for d₁ and an even integer for d₂.

3. The modulator of claim 1 wherein said conductive substrate is a semiconductor.

4. The modulator of claim 1 wherein said conductive substrate is silicon.

5. The modulator of claim 2 wherein layer (i) and (iv) comprises SiN_x.

6. The modulator of claim 1 wherein λ

is 1.55 μ

m.

7. The modulator of claim 1 wherein layer (ii) is polysilicon.

8. The modulator of claim 1 wherein layer (iii) is polysilicon.

9. The modulator of claim 8 wherein layer (ii) is polysilicon.

10. A method for modulating light comprising:

(a) directing a beam of light with a wavelength λ

on a substrate, said substrate having a refractive index η

, and having at least two layers (i) and (ii) thereon, wherein;

(i) is a layer with a thickness t₁, and a refractive index approximately equal to η

^1/2,

(ii) is a layer with a refractive index η

, and a thickness approximately equal to λ

/4η

,

(b) providing a membrane spaced from said substrate, said membrane having an optically transparent portion and comprising at least two layers (iii), and (iv), wherein

layer (iii) is a layer with a refractive index η

, and a thickness approximately equal to λ

/4η

,

layer (iv) is a layer with a refractive index approximately equal to η

^1/2, and a thickness t₂, wherein;

space="preserve" listing-type="equation">t.sub.1 =(λ

/4η

.sup.1/2)-t.sub.2

(c) providing a flexible support for positioning said optically transparent portion of said membrane at a first position spaced from said substrate and defining an air gap d₁ between said layers (ii) and (iii), and a second position spaced from said substrate defining an air gap d₂ between said layers (ii) and (iii), and

(d) applying an electrical bias across said air gap to switch said optically transparent portion of said membrane from said first position to said second position.

11. The method of claim 10 wherein d₁ and d₂ are approximately equal to mλ

/4t, where m is an odd integer for d₁ and an even integer for d₂.

12. The method of claim 10 wherein said substrate is a semiconductor.

13. The method of claim 12 wherein said substrate is silicon.

14. The method of claim 10 wherein said layers (i) and (iv) comprise SiN_x.

15. The method of claim 10 wherein λ

is 1.55 μ

m.

16. The method of claim 10 wherein layer (ii) is polysilicon.

17. The method of claim 10 wherein layer (iii) is polysilicon.

18. The method of claim 17 wherein layer (ii) is polysilicon.

19. A method for fabricating an electrooptic modulator comprising the steps of:

a. depositing a first dielectric layer having a thickness t₁ on a semiconductor substrate,

b. depositing a first polysilicon layer on said first dielectric layer,

c. depositing a glass layer on said first polysilicon layer,

d. depositing a second polysilicon layer on said glass layer,

e. depositing a second dielectric layer with a thickness t₂ on said second polysilicon layer, said dielectric layer selected from the group consisting of silicon dioxide and silicon nitride, and wherein t₁ +t₂ equal approximately 2077 μ

m,

f. masking said dielectric layer with a photomask having a central membrane feature and at least three arms extending from said central membrane feature to a peripheral frame, leaving exposed portions corresponding with spaces between said arms,

g. etching through said dielectric layer and said second polysilicon layer using a plasma etch and using said photomask as an etch mask, to form openings corresponding with said spaces between said arms and expose portions of said glass layer in said openings, and

h. etching through said glass layer in said exposed portions and under said arms using a wet etchant, thereby forming an air gap between said insulating layer and said central membrane feature and leaving said central membrane feature supported by said arms.

20. The method of claim 19 wherein the glass is phosphosilicate glass and the wet etchant comprises HF.