Electric switches for reducing on-state power loss

• US 5,943,223 A
• Filed: 10/15/1997
• Issued: 08/24/1999
• Est. Priority Date: 10/15/1997
• Status: Expired due to Fees

• Current Assignee: Reliance Electric Industrial Company (ABB Limited)
• Original Assignee: Reliance Electric Industrial Company (ABB Limited)
• Inventors: Pond, Robert J.
• Primary Examiner(s): Riley, Shawn
• Application Number:
  US08/951,174
• Time in Patent Office: 678 Days
• Field of Search: 363/147, 363/50, 363/53, 363/56, 363/21, 327/385, 388/837
• US Class Current: 363/53
• CPC Class Codes: H01H 1/0036 Switches making use of microelectromechanical systems [MEMS] for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009
• CPC Class Codes: H01H 9/542 Contacts shunted by static switch means
• CPC Class Codes: H02M 1/00 Details of apparatus for conversion
• CPC Class Codes: H02M 7/32 using mechanical contact-making and -breaking parts
• CPC Class Codes: H02M 7/58 using mechanical contact-making and -breaking parts to interrupt a single potential
• CPC Class Codes: H03K 17/08142 in field-effect transistor switches
• CPC Class Codes: H03K 2217/0036 Means reducing energy consumption

Abstract

A power application circuit utilizes microelectromechanical (MEM) switches to reduce power loss in energy conversion equipment. The MEM switches can be integrated on a single substrate with a diode or semiconductor switch. The MEM switches can be included in a single circuit package with another semiconductor device and may include a control circuit which turns each MEM switch on or off. The MEM switch is controlled so that it is opened and closed only when a relatively low voltage drop occurs across the switch. The MEM switch can be utilized in AC to AC converters, DC to AC converters, AC to DC converters, matrix converters, motor controllers, resonant motor controllers, or other power application devices. The MEM switch can also be included in a single package with an IGBT which is optimized for low-switching losses. It can be included in a single package with a diode to reduce conduction loss in power diode bridges.

Claims

1. A power conversion circuit, comprising:

an array of microelectromechanical switches having a power input and a power output, each of the switches having an input signal terminal, an output signal terminal, and a control terminal; and

a control circuit coupled to the array of switches, the control circuit providing a control signal to the control terminal of each of the switches in the array, the control circuit controlling operation of the switches, each of the switches electrically connecting the input signal terminal to the output signal terminal in response to the control signal provided by the control circuit, wherein the input signal terminal and the output signal terminal of the microelectromechanical switches are connected and disconnected when a low voltage exists across the input signal terminal and the output signal terminal, whereby the array of the switches converts a power signal provided to the power input and provides a converted power signal at the power output.

2. The power conversion circuit of claim 1, wherein the array of switches is arranged as a matrix power converter.

3. The power conversion circuit of claim 1, wherein the array of switches is arranged as a direct current to alternating current converter.

4. The power conversion circuit of claim 2, wherein the array of switches is arranged as a motor controller for providing a pulse width modulated power signal at the power output.

5. The power conversion circuit of claim 4, wherein the array further comprises a semiconductor device in parallel with each of the switches.

6. The power conversion circuit of claim 5, wherein the semiconductor device can be an IGBT, an SCR, a diode, a power FET, or a bipolar transistor.

7. The power conversion circuit of claim 5, wherein the control signal is provided to close and open the switch when a low voltage drop is across the semiconductor device.

8. A power conversion circuit, comprising:

a semiconductor device;

a microelectromechanical switch coupled in parallel with the semiconductor device; and

a control circuit coupled to the microelectromechanical switch, the control circuit opening and closing the switch when a magnitude of voltage across the switch meets a predetermined condition, whereby arcing in the microelectromechanical switch is reduced.

9. The power application circuit of claim 8, wherein the semiconductor device and the microelectronic switch are coupled to provide a rectification circuit.

10. The power application circuit of claim 8, wherein the semiconductor device and the microelectronic switch are coupled to provide a direct current to alternating current conversion circuit.

11. The power application circuit of claim 8, wherein the semiconductor device and microelectronic switch are coupled to provide a direct current to direct current conversion circuit.

12. The power application circuit of claim 8, wherein the semiconductor device and the microelectronic switch are coupled to provide an alternating current to alternating current conversion circuit.

13. The power application circuit of claim 8, wherein the semiconductor device and the microelectronic switch are coupled to provide a motor control circuit.

14. A method of reducing conduction losses in a power application circuit including a power semiconductor device and a microelectromechanical system switch in parallel with the power semiconductor device, the method comprising:

closing the switch when a magnitude of voltage across the semiconductor device is below a threshold; and

opening the switch before the magnitude of the voltage across the switch rises above the threshold.

15. The method of claim 14, wherein the threshold is 5 volts.

16. The method of claim 14, wherein the semiconductor device is a diode.

17. The method of claim 14, wherein the semiconductor device has a semiconductor control terminal, and the semiconductor device is an IGBT, an SCR, a power FET, or a bipolar transistor.

18. The method of claim 17 further comprising:

providing a semiconductor signal to the semiconductor control terminal to cause the semiconductor device to conduct before closing the switch.

19. The method of claim 18 further comprising:

maintaining the semiconductor signal at the semiconductor control terminal until the opening the switch step is completed.

20. The method of claim 14 further comprising:

sampling current through the semiconductor device to determine when to open and to close the switch.

21. An integrated circuit package including a semiconductor device, a first terminal, a second terminal, and a microelectromechanical switch, the switch being coupled between the first terminal and the second terminal, the semiconductor device being coupled between the first terminal and the second terminal, the switch being controlled by a switch control signal, whereby the switch reduces the conduction losses associated with the semiconductor device.

22. The integrated circuit package of claim 21, wherein the switch and the semiconductor device are integrated on the same semiconductor substrate.

23. The integrated circuit package of claim 21 further comprising a control circuit coupled to the switch, the control circuit generating the switch control signal.

24. The integrated circuit of claim 23, wherein the control circuit provides the switch control signal so the switch is opened and closed when a magnitude of a voltage drop across the switch is below a threshold.

25. The integrated circuit of claim 24, wherein the semiconductor device includes a semiconductor control terminal, and the control circuit provides a semiconductor control signal to the semiconductor device to cause the semiconductor device to conduct, wherein the switch control signal is provided after the semiconductor control signal is provided and is removed before the semiconductor control signal is removed.

26. The integrated circuit package of claim 25 further comprising a control terminal coupled to the control circuit, wherein the control circuit provides the switch control signal on the semiconductor control signal in response to an external control signal at the control terminal.

27. The integrated circuit package of claim 21, wherein the semiconductor device is a diode, as IGBT, an SCR, a power FET, or a bipolar transistor.

28. The integrated circuit package of claim 21, wherein the semiconductor device is configured to reduce a lifetime of charge carriers to reduce switching losses in the semiconductor device.

29. The integrated circuit package of claim 28, wherein the semiconductor device is an IGBT, the IGBT being configured by doping or radiation to reduce the lifetime of the charge carriers.

30. The integrated circuit package of claim 21, wherein the semiconductor device is an IGBT including a gate input, wherein the gate input receives a gate control signal causing the IGBT to conduct, the gate control signal being provided before the switch control signal is provided and maintained until after the switch control signal is removed.

31. A rectifier circuit, comprising:

a power input;

at least one semiconductor device coupled to the power input, the semiconductor device rectifying a power signal at the power input;

a microelectromechanical switch coupled in parallel with the semiconductor device, the microelectromechanical switch including a control input; and

a control circuit coupled to the control input and providing a control signal to the control input, the control circuit providing the control signal to the control input so the switch is opened and closed when a magnitude of voltage across the switch is below a threshold.

32. The rectifier circuit of claim 31, wherein the control circuit senses current through either the semiconductor device, the switch, or both the switch and the semiconductor device, and provides the control signal in response to the current.

33. The rectifier circuit of claim 32, wherein the control circuit provides the control signal to open and to close the switch when the current transitions from a first direction to a second direction.

34. A motor control circuit, comprising:

a power input;

a power output;

at least one semiconductor device coupled to the power input, the semiconductor device applying a power signal at the power input to the power output;

a microelectromechanical switch coupled in parallel with the semiconductor device; and

a switch control circuit coupled to the switch, the switch control circuit opening and closing the switch when a magnitude of voltage across the switch is below a threshold.

35. The motor control circuit of claim 34 further comprising:

a power conductor;

a rectifier circuit coupled to the power conductor, the rectifier circuit including at least one rectifying semiconductor device and a rectifier microelectromechanical switch coupled in parallel with the semiconductor device, the rectifier circuit providing the power signal at the power input; and

a rectifier control circuit opening and closing the rectifier microelectronic switch when a magnitude of voltage across the rectifier microelectronic switch is below a threshold.

36. A motor control circuit, comprising:

a power input;

a power bus;

a resonant circuit coupled to the power input, the resonance circuit providing a power signal to the power bus, the power signal having a signal voltage portion and a low voltage portion;

a power output;

a plurality of motor control microelectromechanical switches coupled to the power bus; and

a control circuit coupled to the motor control microelectromechanical switches, the control circuit opening and closing the switches during the low portion of the power signal.

37. The motor control circuit of claim 36, wherein the resonance circuit includes a semiconductor device and a second microelectromechanical switch coupled in parallel with the semiconductor device.

38. The motor control circuit of claim 37, wherein the second microelectromechanical switch is opened and closed when a magnitude of voltage across the second microelectronic switch is below a threshold.

39. The motor control circuit of claim 38, wherein the second microelectromechanical switch is closed when the semiconductor device is conducting and is opened when the semiconductor device is conducting.

40. A power application device, comprising a microelectromechanical switch having an input, an output, a control terminal, and a control circuit coupled to the control terminal, the control circuit providing a control signal to the control terminal to open and to close a circuit path between the input and the output, the control circuit providing the control signal so the switch is opened and closed when a voltage below a threshold level is across the input and the output.

41. A power application circuit, comprising:

a power source providing an at least 24 volt input signal at a frequency below 500 hertz;

an electromechanical switch coupled to the power source, the electromechanical switch being in electrical communication with the power source and providing an at least 24 volt output signal at a frequency of at least 1,000 hertz wherein the electromechanical switch is only opened and closed when a low voltage is across the switch.

42. The power application circuit of claim 41, wherein the electromechanical switch is a MEM switch.