×

Apparatus and method for detecting defects on silicon dies on a silicon wafer

  • US 5,943,551 A
  • Filed: 09/04/1997
  • Issued: 08/24/1999
  • Est. Priority Date: 09/04/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for detecting defects on silicon dies on a silicon wafer comprising the steps of:

  • obtaining images of a sample of die matrices on said silicon wafer using an image acquisition system;

    calculating a statistical die model from said sample of die matrices;

    obtaining an analysis image of a die matrix on said silicon wafer using an image acquisition systemcomparing said statistical die model to said analysis image; and

    determining whether said silicon dies within said analysis image have surface defects.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×