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Method for fabricating thin film transistor device

  • US 5,943,593 A
  • Filed: 05/22/1998
  • Issued: 08/24/1999
  • Est. Priority Date: 11/10/1995
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a thin film transistor device having a polycrystalline semiconductor thin film to form a channel region, and a gate electrode which intersects the channel region, comprising the steps of:

  • forming a structure comprising an amorphous semiconductor thin film separated by a gate insulating layer from a gate electrode on an insulating substrate; and

    irradiating the amorphous semiconductor thin film with an energy beam having a rectangular irradiation area to convert the amorphous semiconductor thin film into a polycrystalline semiconductor thin film while relatively moving said energy beam along a scan direction which is orthogonal to the gate electrode and is parallel to the channel region.

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