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Method and device for introducing precursors into chamber for chemical vapor deposition

  • US 5,945,162 A
  • Filed: 06/17/1996
  • Issued: 08/31/1999
  • Est. Priority Date: 07/12/1993
  • Status: Expired due to Term
First Claim
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1. A method for introducing into a chemical vapor deposition chamber precursors of elements to be deposited over a heated substrate by means of chemical vapor deposition, said method comprising the following steps:

  • maintaining one or more of said precursors in liquid form or in solution in a solvent at a pressure higher than the pressure of the chamber, periodically injecting a constant amount of said precursors in the form of droplets into the deposition chamber to control the growth rate of elements deposited on said heated substrate, wherein each of said droplets has a duplicable volume,introducing a counter-path gas flow into said chamber for evacuating evaporated solvent portions of said droplets to reduce the amount of vapor solvent;

    volatizing said periodically injected precursor droplets to produce evaporated precursors, andconveying toward said heated substrate said evaporated precursors at a temperature and pressure of the chamber, whereby said evaporated precursors react to produce said elements deposited onto said heated substrate.

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