Fabrication process for multichip modules using low temperature bake and cure
First Claim
1. A method for manufacturing a multichip module deposited substrate board utilizing alternating layers of preimidized insulating material and high density thin film metal, comprising:
- a) providing a suitable substrate;
b) coating said substrate with a layer of preimidized insulating material;
c) baking said layer of preimidized insulating material at a temperature below the recrystalization temperature of said high density thin film metal for a time sufficient to remove dissolved solvent within said preimidized insulating material;
d) photolithographically patterning said layer of preimidized insulating material;
e) curing and crosslinking said layer of preimidized insulating material using radiation, while maintaining the temperature of said layer of preimidized insulating material below the recrystalization temperature of said high density thin film metal;
f) depositing a high density thin film metal layer upon said layer of preimidized insulating material;
g) photolithographically patterning said high density thin film metal layer; and
h) repeating steps b) through g) until the multichip module deposited substrate board is completed.
3 Assignments
0 Petitions
Accused Products
Abstract
A method for manufacturing a multichip module deposited substrate board utilizing alternating layers of high density thin-film metal and either preimidized or non-preimidized organic polymer insulating material wherein the insulating material is cured during manufacture using either ultraviolet radiation, ion beam radiation or electron beam radiation. This method eliminates subjecting the in-process substrate board to temperatures in excess of the recrystalization temperature of the thin-film metal, thereby eliminating the source of warpage and metal interdiffusion and corrosion at the metal to insulating material interface. This process enables successful manufacture of large format multichip module deposited substrate boards in sizes up to approximately 24 inches square.
-
Citations
21 Claims
-
1. A method for manufacturing a multichip module deposited substrate board utilizing alternating layers of preimidized insulating material and high density thin film metal, comprising:
-
a) providing a suitable substrate; b) coating said substrate with a layer of preimidized insulating material; c) baking said layer of preimidized insulating material at a temperature below the recrystalization temperature of said high density thin film metal for a time sufficient to remove dissolved solvent within said preimidized insulating material; d) photolithographically patterning said layer of preimidized insulating material; e) curing and crosslinking said layer of preimidized insulating material using radiation, while maintaining the temperature of said layer of preimidized insulating material below the recrystalization temperature of said high density thin film metal; f) depositing a high density thin film metal layer upon said layer of preimidized insulating material; g) photolithographically patterning said high density thin film metal layer; and h) repeating steps b) through g) until the multichip module deposited substrate board is completed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method for manufacturing a multichip module deposited substrate board utilizing alternating layers of non-preimidized insulating material and high density thin film metal, comprising:
-
a) providing a suitable substrate; b) coating said substrate with a layer of non-preimidized insulating material; c) baking said layer of non-preimidized insulating material at a temperature below the recrystalization temperature of said high density thin film metal for a time sufficient to remove dissolved solvent within said non-preimidized insulating material; d) curing and crosslinking said layer of non-preimidized insulating material using radiation while maintaining the temperature of said layer of non-preimidized insulating material below the recrystalization temperature of said high density thin film metal; e) patterning said cured and crosslinked layer of non-preimidized insulating material by a reactive ion beam etching process using an etch mask; f) depositing a high density thin film metal layer upon said layer of non-preimidized insulating material; g) photolithographically patterning said high density thin film metal layer; and h) repeating steps b) through g) until the multichip module deposited substrate board is completed. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
-
Specification