Fabrication process for multichip modules using low temperature bake and cure

• US 5,945,254 A
• Filed: 12/18/1996
• Issued: 08/31/1999
• Est. Priority Date: 12/18/1996
• Status: Expired due to Term

• Current Assignee: Chartoleaux KG LLC (Intellectual Ventures LLC)
• Original Assignee: The Boeing Co.
• Inventors: Chien, Chung-Ping, Young, Peter L., Nielsen, Jean A.
• Primary Examiner(s): Young, Christopher G.
• Application Number:
  US08/768,599
• Time in Patent Office: 986 Days
• Field of Search: 430/296, 430/311, 430/312, 430/313, 430/314, 430/316, 430/318
• US Class Current: 430/296
• CPC Class Codes: G03F 7/0387 Polyamides or polyimides
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H05K 1/0346 containing N
• CPC Class Codes: H05K 2201/0154 Polyimide
• CPC Class Codes: H05K 2203/1105 Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
• CPC Class Codes: H05K 3/0023 by exposure and development of a photosensitive insulating layer
• CPC Class Codes: H05K 3/467 Adding a circuit layer by thin film methods H05K3/4647 takes precedence
• CPC Class Codes: H05K 3/4673 Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer similar methods for protective coatings H05K3/28

Abstract

A method for manufacturing a multichip module deposited substrate board utilizing alternating layers of high density thin-film metal and either preimidized or non-preimidized organic polymer insulating material wherein the insulating material is cured during manufacture using either ultraviolet radiation, ion beam radiation or electron beam radiation. This method eliminates subjecting the in-process substrate board to temperatures in excess of the recrystalization temperature of the thin-film metal, thereby eliminating the source of warpage and metal interdiffusion and corrosion at the metal to insulating material interface. This process enables successful manufacture of large format multichip module deposited substrate boards in sizes up to approximately 24 inches square.

Claims

1. A method for manufacturing a multichip module deposited substrate board utilizing alternating layers of preimidized insulating material and high density thin film metal, comprising:

a) providing a suitable substrate;

b) coating said substrate with a layer of preimidized insulating material;

c) baking said layer of preimidized insulating material at a temperature below the recrystalization temperature of said high density thin film metal for a time sufficient to remove dissolved solvent within said preimidized insulating material;

d) photolithographically patterning said layer of preimidized insulating material;

e) curing and crosslinking said layer of preimidized insulating material using radiation, while maintaining the temperature of said layer of preimidized insulating material below the recrystalization temperature of said high density thin film metal;

f) depositing a high density thin film metal layer upon said layer of preimidized insulating material;

g) photolithographically patterning said high density thin film metal layer; and

h) repeating steps b) through g) until the multichip module deposited substrate board is completed.

2. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said coating step comprises a spin coating step.

3. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said coating step comprises a spray coating step.

4. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said coating step comprises an extrusion coating step.

5. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said curing and crosslinking step comprises irradiating said layer of preimidized insulating material with ultraviolet radiation.

6. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said curing and crosslinking step comprises irradiating said layer of preimidized insulating material with ion beam radiation.

7. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said curing and crosslinking step comprises irradiating said layer of preimidized insulating material with electron beam radiation.

8. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said depositing step comprises a sputtering step.

9. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said depositing step comprises an electroplating step.

10. A method for manufacturing a multichip module deposited substrate board as set forth in claim 1, wherein said preimidized insulating material comprises a polyimide and said high density thin film metal layer comprises copper.

11. A method for manufacturing a multichip module deposited substrate board utilizing alternating layers of non-preimidized insulating material and high density thin film metal, comprising:

a) providing a suitable substrate;

b) coating said substrate with a layer of non-preimidized insulating material;

c) baking said layer of non-preimidized insulating material at a temperature below the recrystalization temperature of said high density thin film metal for a time sufficient to remove dissolved solvent within said non-preimidized insulating material;

d) curing and crosslinking said layer of non-preimidized insulating material using radiation while maintaining the temperature of said layer of non-preimidized insulating material below the recrystalization temperature of said high density thin film metal;

e) patterning said cured and crosslinked layer of non-preimidized insulating material by a reactive ion beam etching process using an etch mask;

f) depositing a high density thin film metal layer upon said layer of non-preimidized insulating material;

g) photolithographically patterning said high density thin film metal layer; and

h) repeating steps b) through g) until the multichip module deposited substrate board is completed.

12. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said coating step comprises a spin coating step.

13. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said coating step comprises a spray coating step.

14. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said coating step comprises an extrusion coating step.

15. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said curing and crosslinking step comprises irradiating said layer of non-preimidized insulating material with ultraviolet radiation.

16. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said curing and crosslinking step comprises irradiating said layer of non-preimidized insulating material with ion beam radiation.

17. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said curing and crosslinking step comprises irradiating said layer of non-preimidized insulating material with electron beam radiation.

18. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said depositing step comprises a sputtering step.

19. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said depositing step comprises an electroplating step.

20. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said non-preimidized insulating material comprises a polyimide and said high density thin film metal layer comprises copper.

21. A method for manufacturing a multichip module deposited substrate board as set forth in claim 11, wherein said patterning step uses a photoresist etch mask.