Thermal detector with nucleation element and method

• US 5,945,673 A
• Filed: 08/28/1997
• Issued: 08/31/1999
• Est. Priority Date: 08/30/1996
• Status: Expired due to Term

• Current Assignee: L-3 Communications Corporation (L3Harris Technologies, Inc.)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Hanson, Charles M., Beratan, Howard R.
• Primary Examiner(s): Hannaher, Constantine
• Application Number:
  US08/919,654
• Time in Patent Office: 733 Days
• Field of Search: 250/338.3
• US Class Current: 250/338.3
• CPC Class Codes: G01J 5/34 using capacitors, e.g. pyroelectric capacitors

Abstract

Thermal sensor (36) mounted to a substrate (34). The thermal sensor may include a first thin film electrode (52), a nucleation element (55), a thermally sensitive element (50) and a second thin film electrode (54). The first thin film electrode (52) may be disposed adjacent to the nucleation element(52). The thermally sensitive element (50) may be in electrical communication with the first thin film electrode (52). The thermally sensitive element (50) may comprise a plurality of preferentially-ordered crystals. The second thin film electrode (54) may be in electrical communication with the thermally sensitive element (50) opposite the nucleation element (55).

Claims

1. A thermal sensor mounted to a substrate to provide an image representative of the amount of thermal radiation incident to the thermal sensor, comprising:

a nucleation element;

a first thin film electrode disposed adjacent to the nucleation element;

a thermally sensitive element comprising a plurality of preferentially ordered crystals, the preferential ordering of said crystals resulting from the presence of said nucleation element, said thermally sensitive element being in electrical communication with the first thin film electrode; and

a second thin film electrode in electrical communication with the thermally sensitive element.

2. The thermal sensor of claim 1, wherein the first thin film electrode is disposed adjacent to the thermally sensitive element opposite the second thin film electrode.

3. The thermal sensor of claim 1, the preferentially-ordered crystals each further comprising a polar axis normal to the electrodes.

4. The thermal sensor of claim 1, wherein the thermally sensitive element is a pyroelectric material.

5. The thermal sensor of claim 1, wherein the thermally sensitive element comprises lead lanthanum zirconate titanate (PLZT).

6. The thermal sensor of claim 1, wherein the nucleation element comprises bismuth titanate.

8. A thermal sensor mounted to a substrate to provide an image representative of the amount of thermal radiation incident to the thermal sensor, comprising:

a nucleation element;

a first thin film electrode disposed adjacent to the nucleation element;

a thermally sensitive element comprising a plurality of preferentially ordered crystals in electrical communication with the first thin film electrode; and

a second thin film electrode in electrical communication with the thermally sensitive element;

the thermal sensor of claim 1, further comprising a supporting structure to support the first thin film electrode in spaced relation with a surface of the substrate, the supporting structure comprising;

at least two posts extending from the surface of the substrate; and

a pair of bifurcated arms each extending from an electrode and connected to the respective posts.

7. A thermal sensor mounted to a substrate to provide an image representative of the amount of thermal radiation incident to the thermal sensor, comprising:

a nucleation element;

a first thin film electrode disposed adjacent to the nucleation element;

a thermally sensitive element comprising a plurality of preferentially ordered crystals in electrical communication with the first thin film electrode; and

a second thin film electrode in electrical communication with the thermally sensitive element;

the nucleation element being disposed adjacent to the thermally sensitive element opposite the second thin film electrode.

9. A thermal imaging system for producing an image of a scene in response to incident thermal radiation from the scene, comprising:

optics for focusing incident thermal radiation emitted by the scene onto a focal plane array;

a chopper disposed between the optics and the focal plane array;

the focal plane array including a plurality of thermal sensors for detecting the incident thermal radiation mounted to a substrate with each thermal sensor comprising;

a nucleation element;

a first thin film electrode disposed adjacent to the nucleation element;

a thermally sensitive element comprising a plurality of preferentially ordered crystals, the preferential ordering of said crystals resulting from the presence of said nucleation element, said thermally sensitive element being in electrical communication with the first thin film electrode;

a second thin film electrode in electrical communication with the thermally sensitive element; and

electronics for receiving an processing the signal to obtain a video signal representing radiance differences emitted by objects in the scene.

10. The thermal imaging system of claim 9, the preferentially-ordered crystals each further comprising a polar axis normal to the electrodes.

11. The thermal imaging system of claim 9, wherein the thermally sensitive element is a pyroelectric material.

12. The thermal imaging system of claim 9, wherein the thermally sensitive element comprises lead lanthanum zirconate titanate (PLZT).

13. The thermal sensor of claim 9, wherein the nucleation element comprises bismuth titanate.

14. A method for fabricating a thermal sensor comprising the steps of:

forming a first thin film electrode;

forming a nucleation element disposed adjacent to the first thin film electrode;

forming a thermally sensitive element comprising a plurality of preferentially ordered crystals, the preferential ordering of said crystals resulting from the presence of said nucleation element with said thermally sensitive element being in electrical communication with the first thin film electrode; and

forming a second thin film electrode in electrical communication with the thermally sensitive element.

15. A method for fabricating a thermal detector having a focal plane array of thermal sensors mounted to an integrated circuit substrate comprising the steps of:

forming a sacrificial layer of material on a surface of the integrated circuit substrate;

forming a thin film layer of thermally sensitive material layer;

forming a first thin film layer of electrically conductive material in electrical communication with the thermally sensitive layer;

forming a nucleation layer in communication with a surface of the thermally sensitive layer;

crystallizing the thin film layer of thermally sensitive material beginning at the surface in communication with nucleation layer;

forming a second thin film layer of electrically conductive material in electrical communication with the thermally sensitive layer opposite the first thin film layer; and

forming from the thin film layers of material a number of thermal sensors which form the focal plane array mounted to the integrated circuit substrate.

16. The method of claim 15, further comprising the steps of removing the sacrificial layer to form a cavity between the integrated circuit substrate and each thermal sensor.

17. The method of claim 15, wherein the thin film layer of thermally sensitive material crystallizes as it forms.

18. The method of claim 15, wherein the thin film layer of thermally sensitive material is formed on a surface of the nucleation layer opposite the first thin film layer.

19. The method of claim 15, wherein the step of crystallizing the thin film layer of thermally sensitive material beginning at the nucleation layer comprises the step of heating the thermally sensitive material to preferentially-order crystals of the thermally sensitive material.

20. The method of claim 19, wherein the preferentially-ordered crystals each include a polar axis normal to the thin film layers of electrically conductive material.

21. The method of claim 15, wherein the nucleation layer comprises an anisotropic material.

22. The method of claim 15, wherein the nucleation layer comprises bismuth titanate.

23. The method of claim 15, wherein the sacrificial layer is removed prior to crystallizing the thermally sensitive material.