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DRAM cell with grooved transfer device

  • US 5,945,707 A
  • Filed: 04/07/1998
  • Issued: 08/31/1999
  • Est. Priority Date: 04/07/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • first and second regions of a first conductivity type formed in a substrate of a second conductivity type; and

    a grooved gate formed in a groove located in said substrate between said first and second regions;

    said grooved gate having sidewall portions and a bottom portion, and defining a channel located in said substrate along said gate sidewall and bottom portions;

    sidewall sections of said channel located along said gate sidewall portion having a larger length than a bottom length of a bottom section of said channel located along said gate bottom portion so that said gate sidewall portions of said channel control said device.

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