Field-effect-controllable, vertical semiconductor component and method for producing the same

• US 5,945,708 A
• Filed: 09/19/1997
• Issued: 08/31/1999
• Est. Priority Date: 09/19/1996
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Siemens AG
• Inventors: Tihanyi, Jenoe
• Primary Examiner(s): Brown, Peter Toby
• Assistant Examiner(s): DUONG, HUNG V
• Application Number:
  US08/933,537
• Time in Patent Office: 711 Days
• Field of Search: 257/330, 257/331, 257/332, 257/329, 257/327, 257/712, 257/713, 257/720
• US Class Current: 257/331
• CPC Class Codes: H01L 29/4175 for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/781 Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
• CPC Class Codes: H01L 29/7834 with a non-planar structure, e.g. the gate or the source or the drain being non-planar
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A field-effect-controllable, vertical semiconductor component, and a method for producing the semiconductor component include a semiconductor body having at least one drain zone of a first conduction type, at least one source zone of the first conduction type, at least one gate electrode insulated from the entire semiconductor body by a gate oxide, and a bulk region of the first conduction type. A source terminal is located on the rear side of the wafer, and a drain terminal and a gate terminal are located on the front side of the wafer.

Claims

1. A field-effect-controllable, vertical semiconductor component, comprising:

a semiconductor body having;

front and rear wafer sides;

at least one drain zone of a first conduction type;

at least one source zone of the first conduction type disposed adjacent said front wafer side;

at least one gate electrode;

a gate oxide insulating said at least one gate electrode from said entire semiconductor body;

a bulk region of the first conduction type disposed adjacent said rear wafer side, said bulk region having a very high dopant concentration; and

a short circuit between said source zone and said bulk region, said short circuit formed by at least one vertical trench filled with conductive material;

a source terminal disposed on said rear wafer side and electrically connected to said bulk region; and

drain terminal and a gate terminal disposed on said front wafer side.

2. The field-effect-controllable, vertical semiconductor component according to claim 1, including a cooling body secured to said source terminal.

3. The field-effect-controllable, vertical semiconductor component according to claim 2, wherein said cooling body is a copper block.

4. The field-effect-controllable, vertical semiconductor component according to claim 1, wherein said conductive material of said trenches contains a substance selected from the group consisting of titanium nitride, doped polysilicon and metal.

5. The field-effect-controllable, vertical semiconductor component according to claim 1, wherein said bulk region has a dopant concentration of >

10¹⁸ cm^-3.

6. The field-effect-controllable, vertical semiconductor component according to claim 1, including intercell zones spacing said drain zones and said source zones apart and each containing one gate electrode and said gate oxide.

7. The field-effect-controllable, vertical semiconductor component according to claim 6, including channel zones of one of the conduction types, each of said channel zones introduced directly beneath a respective one of said intercell zones.

8. The field-effect-controllable, vertical semiconductor component according to claim 7, wherein said channel zones are introduced by ion implantation.

9. The field-effect-controllable, vertical semiconductor component according to claim 1, including contact regions in said drain zones having a very high dopant concentration.

10. The field-effect-controllable, vertical semiconductor component according to claim 9, wherein said contact regions are introduced into said semiconductor body by ion implantation.

11. The field-effect-controllable, vertical semiconductor component according to claim 1, wherein said at least one gate electrode is formed of highly doped polysilicon material.