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Field-effect-controllable, vertical semiconductor component and method for producing the same

  • US 5,945,708 A
  • Filed: 09/19/1997
  • Issued: 08/31/1999
  • Est. Priority Date: 09/19/1996
  • Status: Expired due to Term
First Claim
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1. A field-effect-controllable, vertical semiconductor component, comprising:

  • a semiconductor body having;

    front and rear wafer sides;

    at least one drain zone of a first conduction type;

    at least one source zone of the first conduction type disposed adjacent said front wafer side;

    at least one gate electrode;

    a gate oxide insulating said at least one gate electrode from said entire semiconductor body;

    a bulk region of the first conduction type disposed adjacent said rear wafer side, said bulk region having a very high dopant concentration; and

    a short circuit between said source zone and said bulk region, said short circuit formed by at least one vertical trench filled with conductive material;

    a source terminal disposed on said rear wafer side and electrically connected to said bulk region; and

    drain terminal and a gate terminal disposed on said front wafer side.

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