Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric

• US 5,946,551 A
• Filed: 03/25/1997
• Issued: 08/31/1999
• Est. Priority Date: 03/25/1997
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Purushothaman, Sampath, Furman, Bruce K., Neumayer, Deborah Ann, Dimitrakopoulos, Christos Dimitrios, Laibowitz, Robert B., Duncombe, Peter Richard
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Zarneke, David A.
• Application Number:
  US08/827,015
• Time in Patent Office: 889 Days
• Field of Search: 438/149, 438/216, 438/287, 438/99, 438/158, 438/240, 438/785
• US Class Current: 438/99
• CPC Class Codes: H01L 21/02197 the material having a perovskite structure, e.g. BaTiO3
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/31691 with perovskite structure
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/472 the gate dielectric comprising only inorganic materials
• CPC Class Codes: H10K 85/615 Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Abstract

A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. A fabrication process for the same, especially a process for deposition of the gate insulator using chemical solutions. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

Claims

1. A thin film transistor device structure comprising:

a substrate upon which a plurality of electrically conducting gate electrodes are disposed;

a layer of an inorganic gate insulator having a dielectric constant (.di-elect cons.) of at least 15 disposed on said electrodes;

a layer of an organic semiconductor disposed on said insulator and substantially overlapping the said molecules;

a plurality of sets of electrically conductive source and drain electrodes disposed on said organic semiconductor in alignment with each of said gate electrodes.

2. A method according to claim 1 further including an insulating passivation layer disposed on said structure that protects it from further processing exposures and from the external ambient.

3. A method according to claim 1 wherein the substrate is selected from the group consisting of glass, plastic, quartz, undoped silicon and heavily doped silicon.

4. A method according to claim 3 wherein the said plastic substrate is selected from the group comprising polycarbonate, Mylar, and polyimide.

5. A method according to claim 1 wherein the gate electrode material is selected from the group consisting of chromium, titanium, copper, aluminum, molybdenum, tungsten, nickel, gold, platinum, conducting polyaniline, conducting polypyrrole or combinations thereof.

6. A method according to claim 1 wherein said gate electrodes are 30 nm to 500 nm thick and are produced by a process selected from the group consisting of evaporation, sputtering, chemical vapor deposition, electrodeposition, spin coating, and electroless plating.

7. A method according to claim 1 wherein said high dielectric constant insulator is selected from the group barium strontium titanate, barium zirconate titanate, lead zirconate titanate, lead lanthanum titanate, strontium titanate, barium titanate, barium magnesium fluoride, bismuth titanate, strontium bismuth tantalate and strontium bismuth tantalate niobate.

8. A method according to claim 7 wherein the said insulator has a thickness in the range of 80 nm to 1000 nm.

9. A method according to claim 7 wherein the said gate insulator is fabricated from a precursor comprising a metal alkoxyalkoxide.

10. A method according to claim 7 wherein the said gate insulator is a metal oxide fabricated from a precursor comprising a metal alkoxide.

11. A method according to claim 9 for fabricating the said gate insulator by chemical solution processing comprising:

dissolving said precursor in a solvent to form a solution and coating said solution on the substrate followed by a thermal treatment.

12. A method according to claim 10 for fabricating the said gate insulator by chemical solution processing comprising:

dissolving the said precursor in a solvent and coating said solution on the substrate followed by a thermal treatment.

13. A method according to claim 9, wherein the metal is selected from the group, Ba, Sr, Ti, Bi, Ta, Zr, Fe, Ni, Mn, Pb, La, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Nb, Tl, Hg, Cu, Co, Rh, Sc, Y.

14. A method according to claim 10, wherein the metal is selected from the group, Ba, Sr, Ti, Bi, Ta, Zr, Fe, Ni, Mn, Pb, La, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Nb, Tl, Hg, Cu, Co, Rh, Sc, Y.

15. A method according to claim 9, wherein the alkoxyalkoxide is derived from an alkoxyalcohol selected from the group consisting of, methoxyethanol, ethoxyethanol, propoxyethanol, butoxyethanol, pentoxyethanol, heptoxyethanol, methoxypropanol, ethoxypropanol, propoxypropanol, butoxypropanol, pentoxypropanol, and heptoxypropanol.

16. A method according to claim 10, wherein the alkoxide is derived from any alcohol including, methanol, ethanol, propanol, isopropanol, butanol, isobutanol, preferably isopropanol.

17. A method to claim 9, wherein said metal alkoxyalkoxide comprises a reaction product of a reaction of a metal with an excess of said alkoxyalcohol with the metal selected from the group Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra.

18. A method according to claim 9, wherein said metal alkoxyalkoxide comprises a reaction product of a metal alkoxide with an excess of an alkoxyalcohol.

19. A method according to claim 15 further including forming a metal alkoxyalkoxide, comprising a reaction of a metal halide with the sodium salt and an alkoxyalcohol with a metal selected from the group consisting of a transition metal and a lanthanide element.

20. A method according to claim 11 wherein said gate insulator is a uniformly doping a metal oxide film formed by adding a small amount of said metal alkoxyalkoxide to said solution before fabrication of said film.

21. A method according to claim 1 wherein said organic semiconductor is any polymeric or oligomeric semiconductor that exhibits an increase in field effect mobility with increasing gate voltage.

22. A method according to claim 21 wherein said organic semiconductor is an acene molecular material selected from the group consisting of one or more of naphtalene, anthracene, tetracene, pentacene, hexacene and derivatives thereof.

23. A method according to claim 22 wherein said acene is pentacene.

24. A method according to claim 21 wherein the said organic semiconductor layer has a thickness in the range from one monolayer to 400 nm.

25. A method according to claim 21 wherein the said semiconductor layer is deposited by a process selected from the group consisting of evaporation, chemical vapor deposition, spin coating and baking, electropolymerization, molecular beam deposition and self assembly from solution or a combination thereof.

26. A method according to claim 21 wherein the said semiconductor layer is optionally segmented by a process selected from the group consisting of deposition through a mask, screen printing, stamping, and patterning of the blanket film, in order to minimize the leakage and stray currents between adjacent TFT devices.

27. A method according to claim 1 wherein said source and drain electrodes are made of a material selected from the group consisting of chromium, titanium, copper, aluminum, molybdenum, tungsten, nickel, gold, palladium, platinum, conducting polymers and combinations thereof.

28. A method according to claim 27 wherein an optional ohmic contact layer made of a material selected from the group consisting of gold, platinum, palladium, conducting polymers and oligomers, semiconducting polymers and oligomers, and combination thereof, is disposed between said source/drain electrodes and said semiconductor layer.

29. A method according to claim 27 wherein the thickness of the said source and drain electrodes is in the range 30 nm to 500 nm.

30. A method according to claim 27 wherein said source and drain electrodes are patterned by a method selected from the group consisting of deposition through shadow mask and lithographic patterning techniques.

31. A method according to claim 2 wherein said passivation layer is a polymer selected from the group consisting of polyimide, parylene and undoped polyaniline.