×

Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric

  • US 5,946,551 A
  • Filed: 03/25/1997
  • Issued: 08/31/1999
  • Est. Priority Date: 03/25/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A thin film transistor device structure comprising:

  • a substrate upon which a plurality of electrically conducting gate electrodes are disposed;

    a layer of an inorganic gate insulator having a dielectric constant (.di-elect cons.) of at least 15 disposed on said electrodes;

    a layer of an organic semiconductor disposed on said insulator and substantially overlapping the said molecules;

    a plurality of sets of electrically conductive source and drain electrodes disposed on said organic semiconductor in alignment with each of said gate electrodes.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×