Integrated thermal coupling for heat generating device

• US 5,948,689 A
• Filed: 11/14/1997
• Issued: 09/07/1999
• Est. Priority Date: 07/01/1996
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Digital Equipment Corporation (HP Inc.)
• Inventors: Fitch, John S., Hamburgen, William R.
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US08/970,750
• Time in Patent Office: 662 Days
• Field of Search: 438/121, 438/122, 438/123, 438/124, 757/717, 757/722
• US Class Current: 436/122
• CPC Class Codes: B81B 7/0093 by cooling
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3738 Semiconductor materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10158 at the passive surface
• CPC Class Codes: Y10T 436/186 Sulfur dioxide

Abstract

In order to provide a thermal coupling between a heat source and a heat sink, an integrated interleaved-fin connector is provided. A first substrate includes a first side surface and a second side surface. A plurality of heat generating devices are formed in the first side surface. A plurality of first channels are etched in the second side surface to form a plurality of first fins. A second substrate has a plurality of second channels etched therein to form a plurality of second fins and a base. The base is for thermally engaging with a heat sink. The first and second fins providing a thermally conductive path from the heat generating devices to the heat sink when interleaved with each other.

Claims

1. A method for thermally coupling a heat source to a heat sink, comprising the steps of:

forming a plurality of heat generating devices on a first side surface of a first substrate;

forming a plurality of first channels in a second side surface of the first substrate to form a plurality of first fins;

forming a plurality of second channels in a second substrate to form a plurality of second fins and a second base for connecting to the heat sink; and

interleaving the first and second fins to provide a thermally conductive path from the heat generating source to the heat sink.

2. The method of claim 1 wherein the first and second substrates are made of a silicon crystal.

3. The method of claim 2 wherein the first and second channels are formed along crystal lattice planes perpendicular to the first and second surfaces.

4. The method of claim 1 wherein the first and second substrates are made of a polycrystal.

5. The method of claim 1, wherein the first and the second channels are dry etched.

6. The method of claim 1 wherein the first and second fins are formed planar and parallel to each other.

7. The method of claim 1, wherein at least one of the first and the second channels is one of anisotropically etched and wet etched.

8. The method of claim 5 wherein the dry etching uses plasma.

9. The method of claim 5, wherein the dry etching is performed using reactive ions.

10. An apparatus comprising:

a plurality of heat generating devices on a first side of a first substrate;

a plurality of first fins on a second side of the first substrate;

a plurality of second fins on a second substrate, the second fins configured to be interleaved with the plurality of first fins.

11. The apparatus of claim 10, wherein at least one of the plurality of first fins and the plurality of second fins is formed by etching.

12. The apparatus of claim 10, wherein the interleaved plurality of first and second fins forms a conductive path from the plurality of heat generating devices to a heat sink.

13. The method of claim 12, wherein at least one of the first substrate and the second substrate is crystal.