Vibrating beam accelerometer

• US 5,948,981 A
• Filed: 10/22/1996
• Issued: 09/07/1999
• Est. Priority Date: 05/21/1996
• Status: Expired due to Term

• Current Assignee: Alliedsignal Inc. (Honeywell International Inc.)
• Original Assignee: Alliedsignal Inc. (Honeywell International Inc.)
• Inventors: Woodruff, James R.
• Primary Examiner(s): CHAPMAN JR, JOHN E
• Application Number:
  US08/735,299
• Time in Patent Office: 1,050 Days
• Field of Search: 73/514.29, 73/862.59, 73/514.36, 73/514.37, 73/702, 73/704
• US Class Current: 73/514.29
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 3/0081 Thermal properties
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/097 by vibratory elements
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

The apparatus of the present invention includes a substrate and a thin active layer each comprising a semiconducting material. The substrate has a frame and a proof mass suspended from the frame by one or more flexures, and the active layer includes one or more vibratory force transducers suitable coupled to the proof mass for detecting a force applied to the proof mass. According to the present invention, an insulating layer, such as silicon oxide, is formed between the substrate and the active layer to insulate the active layer from the substrate. Providing a separate insulating layer between the substrate and active layer improves the electrical insulation between the proof mass and the transducers, which allows for effective operation over a wide range of temperatures. The vibratory force transducers comprise first and second parallel beams, each beam having one or more fingers extending laterally outward from the beam and intermeshed with fingers projecting laterally inward towards the beam from an electrode positioned adjacent to the beam.

Claims

1. An apparatus for detecting an applied force comprising:

a substrate comprising a semiconducting material and defining a frame;

an active layer of semiconducting material comprising one or more vibratory force transducers mechanically coupled to the frame for detecting a force applied thereto; and

an epitaxial insulating layer formed between the substrate and the active layer to insulate at least a portion of the vibratory transducers from the substrate, wherein said insulating layer provides both electrical and mechanical insulation between said substrate and said active layer wherein the substrate further comprises a proof mass suspended from the frame by one or more flexures, the vibratory force transducers being coupled to the proof mass and the frame for detecting a force applied to the proof mass, the one or more vibratory force transducers comprise first and second parallel beams each having a first end portion fixed to the proof mass, a second end portion fixed to the instrument frame and a resonating portion therebetween, and first and second electrodes positioned adjacent to and laterally spaced from the first and second beams, and the beams each have one or more fingers extending laterally outward from the beams the electrodes each comprising one or more fingers protecting laterally inward toward the beams and intermeshed with the beam fingers.

2. The apparatus of claim 1 further comprising first and second insulating layers applied to the substrate and the active layer, respectively.

3. The apparatus of claim 2 wherein the first and second insulating layers are bonded together.

4. The apparatus of claim 2 wherein the substrate and the active layer each comprise silicon.

5. The apparatus of claim 4 wherein the insulating layers each comprise a layer of silicon oxide epitaxially grown on the active layer and the substrate.

6. The apparatus of claim 5 wherein the silicon oxide layer is about 0.1 to 10 micrometers thick.

7. The apparatus of claim 1 wherein the substrate is about 300 to 700 micrometers thick and the active layer is about 5 to 40 micrometers thick.

8. The Apparatus of claim 1 wherein the substrate and the active layer each define first and second opposite surfaces with the first surfaces facing each other, the proof mass flexures being substantially centered between the second surfaces of the substrate and the active layer.

9. The apparatus of claim 1 further comprising an oscillating circuit coupled to the electrodes for electrostatically vibrating the beams in a substantially lateral direction.

10. The apparatus of claim 1 further comprising means for detecting a vibration fiequency of the beams and means for determining a magnitude of a force applied to the proof mass based on the vibration frequency of the beams.

11. The apparatus of claim 1 wherein the active layer comprises a pair of vibratory transducers each coupled to an opposite side of the proof mass.