Radiation dosimeter
First Claim
1. A radiation dosimeter comprising an MONOS semiconductor and a resistor connected in series between a source voltage and ground (GND), said MONOS semiconductor device being an electrically rewritable non-volatile memory cell having a gate insulating film consisting of a tunnel oxide film, a silicon nitride film and a top oxide film, and a detection signal being obtainable from a connection point between the MONOS semiconductor device and the resistor.
2 Assignments
0 Petitions
Accused Products
Abstract
A radiation dosimeter including a series circuit of an MONOS semiconductor and a resistor or an MOS or MONOS semiconductor device whose channel conductivity type is opposite from that of the first said MONOS semiconductor device. The MONOS semiconductor device is an electrically rewritable non-volatile memory cell having a gate insulating film consisting of a tunnel oxide film, a silicon nitride film and a top oxide film. The resistor is made of polycrystalline silicon which is little affected by exposure to radiation. The series circuit is connected between a source voltage and ground (GND) and a detection signal is obtained from the connection point between the members of the series circuits.
13 Citations
16 Claims
- 1. A radiation dosimeter comprising an MONOS semiconductor and a resistor connected in series between a source voltage and ground (GND), said MONOS semiconductor device being an electrically rewritable non-volatile memory cell having a gate insulating film consisting of a tunnel oxide film, a silicon nitride film and a top oxide film, and a detection signal being obtainable from a connection point between the MONOS semiconductor device and the resistor.
- 7. A radiation dosimeter comprising an MONOS semiconductor and an MOS semiconductor device whose channel conductivity type is opposite from that of the MONOS semiconductor device connected in series between a source voltage and ground (GND), said MONOS semiconductor device being an electrically rewritable non-volatile memory cell having a gate insulating film consisting of a tunnel oxide film, a silicon nitride film and a top oxide film, and a detection signal being obtainable from a connection point between the MONOS semiconductor device and the MOS semiconductor device.
- 12. A radiation dosimeter comprising a first MONOS semiconductor and a second MONOS semiconductor device whose channel conductivity type is opposite from that of the first MONOS semiconductor device connected in series between a source voltage and ground (GND), the MONOS semiconductor devices being electrically rewritable non-volatile memory cells each having a gate insulating film consisting of a tunnel oxide film, a silicon nitride film and a top oxide film, and a detection signal being obtainable from a connection point between the first and second MONOS semiconductor devices.
Specification