Semiconductor light emitting device with current blocking region

• US 5,949,093 A
• Filed: 11/12/1997
• Issued: 09/07/1999
• Est. Priority Date: 11/15/1996
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Tamamura, Koshi
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/968,654
• Time in Patent Office: 664 Days
• Field of Search: 257/94, 257/96, 257/97, 257/103, 257/99, 372/45, 372/46
• US Class Current: 257/94
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01S 5/327 in AIIBVI compounds, e.g. ZnCdSe-laser

Abstract

A semiconductor light emitting device comprises: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a contact layer formed on the II-VI compound semiconductor layers; a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on the contact layer; and a second-conduction-type-side electrode formed on a bottom surface of the semiconductor substrate, at least a portion of the contact layer underlying the second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between the second first-conduction-type-side electrode and the second-conduction-type-side electrode, and the high-resistance region behaving as a current blocking region.

Claims

1. A semiconductor light emitting device comprising:

a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate;

a contact layer formed on said II-VI compound semiconductor layers;

a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on said contact layer; and

a second-conduction-type-side electrode formed on a bottom surface of said semiconductor substrate, at least a portion of said contact layer underlying said second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between said second-first-conduction-type-side electrode and said second-conduction-type-side electrode, and said high-resistance region behaving as a current blocking region.

2. A semiconductor light emitting device comprising:

a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate;

a first-conduction-type contact layer formed on said II-VI compound semiconductor layers and containing Te;

a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on said first-conduction-type contact layer; and

a second-conduction-type-side electrode formed on a bottom surface of said semiconductor substrate,

at least a portion of said first-conduction-type contact layer underlying said second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between said second first-conduction-type-side electrode and said second-conduction-type-side electrode, and said high-resistance region behaving as a current blocking region.

3. The semiconductor light emitting device according to claim 2, further comprising:

at least one first-conduction-type II-VI compound semiconductor layer underlying said first-conduction-type contact layer and not containing Te; and

said current blocking region formed in said first-conduction-type contact layer and said first-conduction-type II-VI compound semiconductor layer underlying said second first-conduction-type-side electrode.

4. The semiconductor light emitting device according to claim 2 wherein said first-conduction-type contact layer is made of ZnTe, ZnSTe, ZnSeTe, or BeTe.

5. The semiconductor light emitting device according to claim 2 further including a first-conduction-type ZnSe/ZnTe multiquantum well layer underlying said first-conduction-type contact layer, said current blocking region being formed in said first-conduction-type contact layer and said first-conduction-type ZnSe/ZnTe multiquantum well layer underlying said second first-conduction-type-side electrode.

6. The semiconductor light emitting device according to claim 2 wherein said first first-conduction-type-side electrode and said second first-conduction-type-side electrode are made of the same metal or metals.

7. The semiconductor light emitting device according to claim 2 wherein said second first-conduction-type-side electrode has better characteristics than those of said first first-conduction-type-side electrode in terms of ohmic contact with said first-conduction-type contact layer.