Edge termination structure

• US 5,949,124 A
• Filed: 05/09/1997
• Issued: 09/07/1999
• Est. Priority Date: 10/31/1995
• Status: Expired due to Term

• Current Assignee: Google LLC (Alphabet Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Salih, Ali, Shen, Zheng, Hadizad, Peyman
• Primary Examiner(s): GUAY, JOHN FRANCIS
• Application Number:
  US08/999,889
• Time in Patent Office: 851 Days
• Field of Search: 257/496, 257/495, 257/487, 257/491, 257/622
• US Class Current: 257/496
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 29/0661 specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An edge termination structure is created by forming trench structures (14) near a PN junction. The presence of the trench structures (14) extends a depletion region (13) between a doped region (12) and a body of semiconductor material or a semiconductor substrate (11) of the opposite conductivity type away from the doped region (12). This in turn forces junction breakdown to occur in the semiconductor bulk, leading to enhancement of the breakdown voltage of a semiconductor device (10). A surface of the trench structures (14) is covered with a conductive layer (16) which keeps the surface of the trench structures (14) at an equal voltage potential. This creates an equipotential surface across each of the trench structures (14) and forces the depletion region to extend laterally along the surface of semiconductor substrate (11). The conductive layers (16) are electrically isolated from an electrical contact (17) which contacts the doped region (12) and from the conductive layers (16) of neighboring trench structures (14).

Claims

1. An edge termination structure for a semiconductor device comprising:

a body of semiconductor material of a first conductivity type, the body of semiconductor material having a major surface;

a doped region of a second conductivity type formed in the body of semiconductor material;

a trench structure at the major surface of the body of semiconductor material, wherein the trench structure has a surface and vertical sidewalls that extend from the major surface, the vertical sidewalls being devoid of a PN junction, and the trench structure being separated from the doped region by a first distance and extending vertically into the body of semiconductor material a second distance; and

a conductive layer formed along the surface of the trench structure, wherein the conductive layer is made from a different material than the body of semiconductor material, and wherein a portion of the conductive layer contacts a portion of the body of semiconductor material.

2. The edge termination structure for a semiconductor device of claim 1, further comprising a depletion region adjacent to a PN junction that is formed between the doped region and the body of semiconductor material.

3. The edge termination structure for a semiconductor device of claim 2, wherein the trench structure extends the depletion region away from the doped region at the surface of the body of semiconductor material.

4. The edge termination structure for a semiconductor device of claim 1, wherein the conductive layer keeps the surface of the trench structure at an essentially equal voltage potential across the surface of the trench structure.

5. The edge termination structure for a semiconductor device of claim 1, further comprising a plurality of trench structures formed in the body of semiconductor material.

6. The edge termination structure for a semiconductor device of claim 1, wherein the first distance between the doped region and the trench structure is 0.5 μ

m to 100 μ

m.

7. The edge termination structure for a semiconductor device of claim 1, wherein the second distance the trench structure extends into the body of semiconductor material is 0.1 μ

m to 10 μ

m.

8. The edge termination structure for a semiconductor device of claim 1, wherein the conductive layer is selected from the group consisting of aluminum, aluminum alloy, titanium, titanium nitride, titanium tungsten, gold, and doped polysilicon.

9. The edge termination structure for a semiconductor device of claim 1, wherein the doped region is a portion of a semiconductor device selected from the group consisting of an insulated gate bipolar junction transistor, a bipolar junction transistor, a diode, a power diode, a field effect transistor, and a thyristor.

10. An edge termination structure for a semiconductor device comprising:

a body of semiconductor material of a first conductivity type, the body of semiconductor material having a major surface;

a doped region of a second conductivity type formed in the body of semiconductor material;

a trench structure at the major surface of the body of semiconductor material, wherein the trench structure has a surface and vertical sidewalls that extend from the major surface, the vertical sidewalls being devoid of a PN junction, and the trench structure being separated from the doped region by a first distance and extending vertically into the body of semiconductor material a second distance; and

a conductive layer formed along the surface of the trench structure, wherein the conductive layer is made from a different material than the body of semiconductor material, wherein the semiconductor device has a breakdown voltage of 300 volts to 2500 volts.

11. A semiconductor device comprising:

a semiconductor substrate comprising a semiconductor material of a first conductivity type;

a PN junction in the semiconductor substrate;

a trench structure physically separated from the PN junction by a distance, wherein the trench structure has vertical sidewalls that expose only the semiconductor material of the first conductivity type, and the trench structure increases a breakdown voltage of the PN junction; and

a conductive layer formed along the surface of the trench structure, wherein the conductive layer is made from a different material than the body of semiconductor material, and wherein a portion of the conductive layer contacts a portion of the semiconductor substrate.

12. The semiconductor device of claim 11, further comprising a conductive layer formed in the trench structure, wherein the conductive layer is a separate layer from the semiconductor substrate.

13. The semiconductor device of claim 12, wherein the conductive layer is selected from the group consisting of aluminum, aluminum alloy, titanium, titanium nitride, titanium tungsten, gold, and doped polysilicon.

14. The semiconductor device of claim 11, wherein the PN junction is a portion of a semiconductor device selected from the group consisting of an insulated gate bipolar junction transistor, a bipolar junction transistor, a diode, a power diode, a field effect transistor, and a thyristor.

15. A PN junction comprising:

a semiconductor substrate of a first conductivity type;

a doped region of a second conductivity type forming a PN junction and a depletion region around the doped region; and

a trench structure formed in the semiconductor substrate and having a surface covered with a conductive material, the trench structure having vertical sidewalls that expose only the semiconductor substrate of the first conductivity type; and

a conductive layer formed along the surface of the trench structure, wherein the conductive layer is made from a different material than the body of semiconductor material, and wherein a portion of the conductive layer contacts the body of semiconductor material.

16. The PN junction of claim 15, further comprising a plurality of trench structures formed in the semiconductor substrate.

17. The PN junction of claim 15, wherein the doped region and the trench structure are separated by 0.5 μ

m to 100 μ

m.

18. The PN junction of claim 15, wherein the conductive material is selected from the group consisting of aluminum, aluminum alloy, titanium, titanium nitride, titanium tungsten, gold, and doped polysilicon.

19. The PN junction of claim 15, wherein the PN junction is a portion of a semiconductor device selected from the group consisting of an insulated gate bipolar junction transistor, a bipolar junction transistor, a diode, a power diode, a field effect transistor, and a thyristor.

20. The PN junction of claim 15, wherein the PN junction has a breakdown voltage of 300 volts to 2500 volts.