Asymmetric sense amplifier for single-ended memory arrays

• US 5,949,256 A
• Filed: 10/31/1997
• Issued: 09/07/1999
• Est. Priority Date: 10/31/1997
• Status: Expired due to Term

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Company (HP Inc.)
• Inventors: Carman, Jenny R., Zhang, Kevin
• Primary Examiner(s): TRAN, TOAN V
• Application Number:
  US08/961,844
• Time in Patent Office: 676 Days
• Field of Search: 327/51-57, 327/77, 327/81, 327/88, 327/89
• US Class Current: 327/57
• CPC Class Codes: G11C 7/065 Differential amplifiers of latching type

Abstract

An asymmetric sense amplifier is disclosed for use with single-ended memory arrays. The sense amplifier has a bit input, a reference input, an enable input, and bistable output circuitry. The reference input may simply be tied to V_DD. The bistable output circuitry includes first and second output nodes disposed between first and second pull-up/pull-down paths, respectively. The first pull-up and pull-down paths may include first pull-up and pull-down FET channels, respectively. The second pull-up and pull-down paths may include second pull-up and pull-down FET channels, respectively. The bistable output circuitry is operable to be stable in first and second states. In both states, the output nodes are at opposite potentials. The sense amplifier is asymmetrical in the following sense: Either the second pull-down FET channel is wider than the first pull-down FET channel, or the first pull-up FET channel is wider than the second pull-up FET channel, or both. The result of the asymmetry is that the bistable output circuitry has a bias toward stabilizing in its first state. When the voltage on the bit input is equal to the voltage on the reference input and the enable input is asserted, the bistable output circuitry stabilizes in its first state; but when the voltage on the bit input is less than the voltage on the reference input by more than a threshold amount and the enable input is asserted, the bias is overcome and the bistable output circuitry stabilizes in its second state.

Claims

1. A sense amplifier for use with single-ended memory arrays and obviating the need for reference voltage generation circuitry, the sense amplifier comprising:

a first pull-up FET having its channel connected between a supply voltage and a first output node;

a first pull-down FET having its channel connected between the first output node and ground via the channel of an enable FET;

a second pull-up FET having its channel connected between the supply voltage and a second output node;

a second pull-down FET having its channel connected between the second output node and ground via the channel of the enable FET;

an input FET having its channel connected between a bit input and the first output node; and

a reference FET having its channel connected between the supply voltage and the second output node;

wherein the second output node is connected to the gate of the first pull-up FET and to the gate of the first pull-down FET;

wherein the first output node is connected to the gate of the second pull-up FET and to the gate of the second pull-down FET;

wherein the gate of the input FET is connected to a select signal;

wherein the gate of the reference FET is connected to the select signal;

wherein the gate of the enable FET is connected to a sense amplifier enable signal; and

wherein the channel lengths of the first and second pull-up FETs are substantially equal, but the channel widths of the first and second pull-up FETs are substantially different.

2. The sense amplifier of claim 1, wherein the channel width of the first pull-up FET is substantially larger than the channel width of the second pull-up FET.

3. The sense amplifier of claim 2, wherein the channel lengths of the first and second pull-down FETs are substantially equal, but the channel width of the second pull-down FET is substantially larger than the channel width of the first pull-down FET.

4. The sense amplifier of claim 1, wherein the channel width of the second pull-up FET is substantially larger than the channel width of the first pull-up FET.

5. The sense amplifier of claim 4, wherein the channel lengths of the first and second pull-down FETs are substantially equal, but the channel width of the first pull-down FET is substantially larger than the channel width of the second pull-down FET.

6. A sense amplifier for use with single-ended memory arrays and obviating the need for reference voltage generation circuitry, the sense amplifier comprising:

a first pull-up FET having its channel connected between a supply voltage and a first output node;

a first pull-down FET having its channel connected between the first output node and ground via the channel of an enable FET;

a second pull-up FET having its channel connected between the supply voltage and a second output node;

a second pull-down FET having its channel connected between the second output node and ground via the channel of the enable FET;

an input FET having its channel connected between a bit input and the first output node; and

a reference FET having its channel connected between the supply voltage and the second output node;

wherein the second output node is connected to the gate of the first pull-up FET and to the gate of the first pull-down FET;

wherein the first output node is connected to the gate of the second pull-up FET and to the gate of the second pull-down FET;

wherein the gate of the input FET is connected to a select signal;

wherein the gate of the reference FET is connected to the select signal;

wherein the gate of the enable FET is connected to a sense amplifier enable signal; and

wherein the channel lengths of the first and second pull-down FETs are substantially equal, but the channel widths of the first and second pull-down FETs are substantially different.

7. The sense amplifier of claim 6, wherein the channel width of the second pull-down FET is substantially larger than the channel width of the first pull-down FET.

8. The sense amplifier of claim 7, wherein the channel lengths of the first and second pull-up FETs are substantially equal, but the channel width of the first pull-up FET is substantially larger than the channel width of the second pull-up FET.

9. The sense amplifier of claim 6, wherein the channel width of the first pull-down FET is substantially larger than the channel width of the second pull-down FET.

10. The sense amplifier of claim 9, wherein the channel lengths of the first and second pull-up FETs are substantially equal, but the channel width of the second pull-up FET is substantially larger than the channel width of the first pull-up FET.

11. A sense amplifier for use with single-ended memory arrays and obviating the need for reference voltage generation circuitry, the sense amplifier comprising:

a first pull-up FET having its channel connected between a supply voltage and a first output node;

a first pull-down FET having its channel connected between the first output node and ground via the channel of an input FET and the channel of an enable FET, the channel of the first pull-down FET and the channel of the input FET forming a first pull-down path;

a second pull-up FET having its channel connected between the supply voltage and a second output node;

a second pull-down FET having its channel connected between the second output node and ground via the channel of a reference FET and the channel of the enable FET, the channel of the second pull-down FET and the channel of the reference FET forming a second pull-down path;

a first precharge FET having its channel connected between the supply voltage and the first output node; and

a second precharge FET having its channel connected between the supply voltage and the second output node;

wherein the second output node is connected to the gate of the first pull-up FET and to the gate of the first pull-down FET;

wherein the first output node is connected to the gate of the second pull-up FET and to the gate of the second pull-down FET;

wherein the gate of the input FET is connected to a bit signal;

wherein the gate of the reference FET is connected to the supply voltage;

wherein the gate of the enable FET is connected to a sense amplifier enable signal;

wherein the gates of the first and second precharge FETs are connected to a precharge signal; and

wherein the channel lengths of the first and second pull-up FETs are substantially equal, but the channel widths of the first and second pull-up FETs are substantially different.

12. The sense amplifier of claim 11, wherein the channel width of the first pull-up FET is substantially larger than the channel width of the second pull-up FET.

13. The sense amplifier of claim 12, wherein the cumulative channel lengths of the first and second pull-down paths are substantially equal, but the cumulative channel width of the second pull-down path is substantially larger than the cumulative channel width of the first pull-down path.

14. The sense amplifier of claim 11, wherein the channel width of the second pull-up FET is substantially larger than the channel width of the first pull-up FET.

15. The sense amplifier of claim 14, wherein the cumulative channel lengths of the first and second pull-down paths are substantially equal, but the cumulative channel width of the first pull-down path is substantially larger than the cumulative channel width of the second pull-down path.

16. A sense amplifier for use with single-ended memory arrays and obviating the need for reference voltage generation circuitry, the sense amplifier comprising:

a first pull-up FET having its channel connected between a supply voltage and a first output node;

a first pull-down FET having its channel connected between the first output node and ground via the channel of an input FET and the channel of an enable FET, the channel of the first pull-down FET and the channel of the input FET forming a first pull-down path;

a second pull-up FET having its channel connected between the supply voltage and a second output node;

a second pull-down FET having its channel connected between the second output node and ground via the channel of a reference FET and the channel of the enable FET, the channel of the second pull-down FET and the channel of the reference FET forming a second pull-down path;

a first precharge FET having its channel connected between the supply voltage and the first output node; and

a second precharge FET having its channel connected between the supply voltage and the second output node;

wherein the second output node is connected to the gate of the first pull-up FET and to the gate of the first pull-down FET;

wherein the first output node is connected to the gate of the second pull-up FET and to the gate of the second pull-down FET;

wherein the gate of the input FET is connected to a bit signal;

wherein the gate of the reference FET is connected to the supply voltage;

wherein the gate of the enable FET is connected to a sense amplifier enable signal;

wherein the gates of the first and second precharge FETs are connected to a precharge signal; and

wherein the cumulative channel lengths of the first and second pull-down paths are substantially equal, but the cumulative channel widths of the first and second pull-down paths are substantially different.

17. The sense amplifier of claim 16, wherein the cumulative channel width of the first pull-down path is substantially larger than the cumulative channel width of the second pull-down path.

18. The sense amplifier of claim 17, wherein the channel lengths of the first and second pull-up FETs are substantially equal, but the channel width of the second pull-up FET is substantially larger than the channel width of the first pull-up FET.

19. The sense amplifier of claim 16, wherein the cumulative channel width of the second pull-down path is substantially larger than the cumulative channel width of the first pull-down path.

20. The sense amplifier of claim 19, wherein the channel lengths of the first and second pull-up FETs are substantially equal, but the channel width of the first pull-up FET is substantially larger than the channel width of the second pull-up FET.