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Static random access memory cell having a thin film transistor (TFT) pass gate connection to a bit line

  • US 5,949,706 A
  • Filed: 01/26/1999
  • Issued: 09/07/1999
  • Est. Priority Date: 03/01/1993
  • Status: Expired due to Term
First Claim
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1. A static random access memory cell comprising:

  • a voltage terminal;

    means for storing a binary value coupled to the voltage terminal comprising two cross-coupled inverters;

    a select gate having a first terminal coupled to the means for storing and a second terminal, wherein the select gate is further characterized as being a transmission gate which comprises at least one thin film transistor (TFT) overlying another transistor; and

    a conductor coupled to the second terminal of the select gate to bit line detection circuitry.

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