×

Electrically programmable memory, method of programming and method of reading

  • US 5,949,709 A
  • Filed: 06/23/1998
  • Issued: 09/07/1999
  • Est. Priority Date: 08/31/1995
  • Status: Expired due to Fees
First Claim
Patent Images

1. An electrically programmable memory comprising:

  • a floating gate FET cell having;

    a drain electrode, anda source electrode;

    means for applying to one of the drain and source electrodes a first relatively high voltage for a programming time;

    means for applying to the other of the drain and source electrodes a second voltage less than the first voltage for the programming time, the second voltage being variable between more than two levels so as to determine the quantity of charge induced on the floating gate FET cell and thereby to determine a multi-level value programmed into the cell substantially independently of the programming time.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×