In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization

• US 5,949,927 A
• Filed: 03/09/1995
• Issued: 09/07/1999
• Est. Priority Date: 12/28/1992
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Wallace T.Y. Tang
• Inventors: Tang, Wallace T. Y.
• Primary Examiner(s): Lee, John D.
• Application Number:
  US08/401,229
• Time in Patent Office: 1,643 Days
• Field of Search: 385/12, 385/15, 385/25, 385/26, 385/39, 385/115, 385/147, 250/227.14, 250/227.18, 250/227.23-227.3, 451/6
• US Class Current: 385/12
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer

Abstract

A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Claims

1. An apparatus for monitoring thickness change in a film on a substrate comprising

(i) a bifurcated fiber-optic cable having a common leg and two bifurcated legs,

(ii) a rotating fiber-optic cable with two ends,

(iii) a light source,

(iv) means for analyzing a light signal to determine thickness change and stopping thickness change when the thickness reaches a predetermined endpoint, and

(v) a rotating coupler having a stationary end and a rotating end,

wherein the first bifurcated leg of the bifurcated fiber-optic cable is connected to the light source, the second bifurcated leg is connected to the means for analyzing a light signal, and the common leg is connected to the stationary end of the rotating coupler,

and wherein one end of the rotating fiber-optic cable is connected to the rotating end of the rotating coupler and the other end is held in close proximity to the substrate.

2. An apparatus according to claim 1, wherein said other end of the rotating fiber-optic cable is held less than about 1 cm away from the substrate.

3. In a chemical mechanical polishing device for planarizing a film on a substrate, the improvement comprising

(i) a bifurcated fiber-optic cable having a common leg and two bifurcated legs,

(ii) a rotating fiber-optic cable with two ends,

(iii) a light source,

(iv) means for analyzing a light signal to determine thickness and stopping thickness change when the thickness reaches a predetermined endpoint, and

(v) a rotating coupler having a stationary end and a rotating end,

wherein the first bifurcated leg of the bifurcated fiber-optic cable is connected to the light source, the second bifurcated leg is connected to the means for analyzing a light signal, and the common leg is connected to the stationary end of the rotating coupler,

and wherein one end of the rotating fiber-optic cable is connected to the rotating end of the rotating coupler and the other end is held in close proximity to the substrate undergoing chemical mechanical polishing.

4. The device according to claim 3, wherein said other end of the rotating fiber-optic cable is held less than about 1 cm away from the substrate.

5. In a chemical mechanical polishing device for planarizing a film on a substrate, the improvement comprising

(i) a bifurcated fiber-optic cable having a common leg and two bifurcated legs,

(ii) a rotating fiber-optic cable with two ends,

(iii) a light source,

(iv) means for analyzing a light signal based on interferometry or spectrophotometry, and

(v) a rotating coupler having a stationary end and a rotating end,

wherein the first bifurcated leg of the bifurcated fiber-optic cable is connected to the light source, the second bifurcated leg is connected to the means for analyzing a light signal, and the common leg is connected to the stationary end of the rotating coupler,

and wherein one end of the rotating fiber-optic cable is connected to the rotating end of the rotating coupler and the other end is held in close proximity to either side of the substrate undergoing chemical mechanical polishing to illuminate a section of the film.

6. The chemical mechanical polishing device as claimed in claim 5, wherein the illuminated section is a dedicated measurement area.

7. In a chemical mechanical polishing device for planarizing a film on a substrate comprising a polishing table, the improvement comprising

(i) a bifurcated fiber-optic cable having a common leg and two bifurcated legs,

(ii) a rotating fiber-optic cable with two ends,

(iii) a light source,

(iv) means for analyzing a light signal to determine thickness and stopping thickness change when the thickness reaches a predetermined endpoint, and

(v) a rotating coupler having a stationary end and a rotating end,

wherein the first bifurcated leg of the bifurcated fiber-optic cable is connected to the light source, the second bifurcated leg is connected to the means for analyzing a light signal, and the common leg is connected to the stationary end of the rotating coupler,

and wherein one end of the rotating fiber-optic cable is connected to the rotating end of the rotating coupler and the other end is held in close proximity to a side of the substrate undergoing chemical mechanical polishing, said other end illuminating a section of the film of the substrate and said analyzing means measuring a light signal returning from the section.

8. The chemical mechanical polishing device as claimed in claim 7, wherein the measured light signal has at least one wavelength greater than about 200 nanometers.

9. The chemical mechanical polishing device as claimed in claim 7, wherein the measured light signal has at least one wavelength between about 200 nanometers and about 11,000 nanometers.

10. The chemical mechanical polishing device as claimed in claim 7, wherein the illuminated section is a dedicated measurement area.

11. The chemical mechanical polishing device as claimed in claim 10, wherein the dedicated measurement area is illuminated at timed intervals during rotation of the substrate and/or the polishing table.

12. In a chemical mechanical polishing device for planarizing a film on a substrate, the improvement comprising

(i) a bifurcated fiber-optic cable having a common leg and two bifurcated legs,

(ii) a rotating fiber-optic cable with two ends,

(iii) a light source,

(iv) means for analyzing a light signal to determine thickness and stopping thickness chance when the thickness reaches a predetermined endpoint, and

(v) a rotating coupler having a stationary end and a rotating end,

wherein the first bifurcated leg of the bifurcated fiber-optic cable is connected to the light source, the second bifurcated leg is connected to the means for analyzing a light signal, and the common leg is connected to the stationary end of the rotating coupler,

and wherein one end of the rotating fiber-optic cable is connected to the rotating end of the rotating coupler and the other end is held in close proximity to a side of the substrate which is not undergoing chemical mechanical polishing, said other end illuminating a section of the film of the substrate and said analyzing means measuring a light signal returning from the section.

13. The chemical mechanical polishing device as claimed in claim 12, wherein the measured light signal has at least one wavelength between about 1,000 nanometers and about 11,000 nanometers.

14. The chemical mechanical polishing device as claimed in claim 12, wherein the illuminated section is a dedicated measurement area.

15. In a chemical mechanical polishing device for planarizing a film on a substrate comprising a polishing table, the improvement comprising

(i) a bifurcated fiber-optic cable having a common leg and two bifurcated legs,

(ii) an electrical slipring,

(iii) a light source, and

(iv) means for analyzing a light signal,

wherein the first bifurcated leg of the bifurcated fiber-optic cable is connected to the light source, the second bifurcated leg is connected to the means for analyzing a light signal, and the common leg is connected at one end to the electrical slipring,

and wherein another end of the common leg of the fiber-optic cable is held in close proximity to a side of the substrate undergoing chemical mechanical polishing, said end illuminating a section of the film of the substrate and said analyzing means analyzing a light signal returning from the section based on interferometry or spectrophotometry.

16. The chemical mechanical polishing device as claimed in claim 15, wherein the returning light signal has at least one wavelength greater than about 200 nanometers.

17. The chemical mechanical polishing device as claimed in claim 15, wherein the returning light signal has at least one wavelength between about 200 nanometers and about 11,000 nanometers.

18. The chemical mechanical polishing device as claimed in claim 15, wherein the illuminated section is a dedicated measurement area.

19. The chemical mechanical polishing device as claimed in claim 18, wherein the dedicated measurement area is illuminated at timed intervals during rotation of the substrate and/or the polishing table.

20. A chemical mechanical polisher for planarizing a film on a substrate comprising at least one light source that illuminates at least one section of the film on the substrate to create at least one reflected light signal received by a photodetector positioned in close proximity to the reflected light signal, which converts the reflected light signal into an electrical signal and transmits the electrical signal to an electrical slip ring, said electrical slip ring uncoupling the electrical signal from rotation and being operably connected to an analyzer that analyzes the electrical signal to monitor the progress of planarization.

21. A polisher as claimed in claim 20, wherein said at least one light source transmits light through the substrate and said at least one reflected light signal has at least one wavelength between about 1,000 nanometers and about 11,000 nanometers.

22. A polisher as claimed in claim 20, wherein only one section is illuminated which is a dedicated measurement area.

23. A polisher as claimed in claim 20, wherein more than one section is illuminated.

24. An apparatus for monitoring thickness change in a film on one side of a substrate having two sides comprising a light source that illuminates a section of the film on one side of the substrate to create a reflected light signal and a decoupler which decouples the reflected light signal from rotation, said decoupler being operably connected to means for monitoring thickness change based on the reflected light signal.

25. The apparatus as claimed in claim 24 wherein the light source transmits light through the substrate from the side of the substrate without the film.

26. The apparatus as claimed in claim 24 wherein the light source transmits light from the side of the substrate with the film to each section on the film that is monitored.

27. The apparatus as claimed in claim 24 wherein the decoupler comprises an electrical slip ring or a fiber-optic rotation decoupler.

28. The apparatus as claimed in claim 24 wherein the means for monitoring thickness change based on a reflected light signal comprises a photodetector connected to an interferometer or a spectrophotometer.

29. An apparatus for monitoring thickness change in a film on one side of a substrate having two sides, said apparatus comprising at least one light source that illuminates at least one section of the film on the substrate to create at least one reflected light signal that is received by at least one decoupler that decouples the reflected light signal from rotation and transmits the reflected signal to at least one device that monitors thickness change based on the reflected light signal.

30. The apparatus as claimed in claim 29 wherein the at least one light source transmits light through the substrate from the side of the substrate without the film.

31. The apparatus as claimed in claim 29 wherein each monitored section is minimized in size to remove signal problems.

32. The apparatus as claimed in claim 29, wherein only one section is illuminated which is a dedicated measurement area.

33. The apparatus as claimed in claim 29, wherein more than one section is illuminated.

34. The apparatus as claimed in claim 29, wherein the at least one light source transmits light from the side of the substrate with the film to each section on the film to be illuminated.

35. The apparatus as claimed in claim 29 wherein the at least one decoupler that decouples the reflected light signal from rotation comprises an electrical slip ring or a fiber-optic rotation decoupler.

36. The apparatus as claimed in claim 29 wherein the device that monitors thickness change based on the reflected light signal comprises a photodetector connected to an interferometer or a spectrophotometer.

37. An apparatus for chemical mechanical polishing of a wafer, comprising

(a) a rotatable polishing platen with an overlying polishing pad wetted with an abrasive slurry;

(b) a rotatable chuck for holding the wafer against the polishing pad, the wafer comprising a semiconductor substrate underlying an oxide layer; and

(c) an endpoint detector, comprising

(c1) a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and

(c2) a hole formed through the platen and polishing pad allowing the laser beam to reflect off a section of the wafer when the hole is positioned over said section of the wafer.

38. The apparatus as claimed in claim 37, wherein the hole is filled with a portion of a fiber-optic cable.

39. The apparatus as claimed in claim 37, further comprising means for coordinating the generation of the laser beam with the position of the hole.

40. A chemical mechanical polisher for polishing a film over a substrate comprising

at least one light source capable of transmitting light through a rotatable polishing pad to the film;

and at least one device that detects interferometric change in reflected light generated when light is transmitted through the polishing pad to the film.

41. The chemical mechanical polisher of claim 40, wherein the at least one device comprises a detector to detect said interferometric change and an analyzer for controlling the chemical mechanical polisher in response to the detected interferometric change.

42. The chemical mechanical polisher of claim 41, wherein the analyzer analyzes interferometric change in the reflected light to determine a change in dimension of the film.

43. The chemical mechanical polisher of claim 42, wherein the analyzer analyzes interferometric change in the reflected light using interferometry at one wavelength.

44. The chemical mechanical polisher of claim 42, wherein the analyzer analyzes interferometric change in the reflected light using spectrophotometry over a continuous range of wavelengths.

45. The chemical mechanical polisher of claim 42, wherein the analyzer analyzes interferometric change in the reflected light to determine a change in thickness or planarity of the film.

46. The chemical mechanical polisher of claim 40, wherein incident and reflected light are transmitted through a rotating fiber optic cable embedded in a rotating platen below the polishing pad.

47. The chemical mechanical polisher of claim 40, wherein incident light is transmitted to a section of the film.

48. The chemical mechanical polisher of claim 40, wherein incident light is transmitted to more than one section of the film.

49. The chemical mechanical polisher of claim 40, wherein the light source produces a light of at least one wavelength between 200 and 11,000 nanometers.

50. The chemical mechanical polisher of claim 40, wherein the light source produces laser light.

51. A method of processing a film comprising

polishing the film with a rotating polishing pad;

illuminating at least one section of the film with light transmitted through the rotating polishing pad during polishing of said at least one section; and

detecting interferometric change in light reflected from the at least one illuminated section of the film.

52. A method of claim 51, wherein polishing the film comprises polishing said film in a chemical mechanical polisher comprising

at least one light source that illuminates said at least one section of the film by directing light through said polishing pad to the film;

and at least one device that detects said interferometric change.

53. A method of claim 52, wherein the reflected light passes through and out of the polishing pad before said detection step.

54. A method of claim 53, wherein said interferometric change is detected when said at least one section of the film passes over said at least one device.

55. A method of claim 53, wherein light from the light source that illuminates said at least one section and reflected light pass through a fiber optic cable embedded in the rotating polishing pad.

56. A method of claim 55, further comprising controlling thickness change in the film in response to the detected interferometric change.

57. A method of claim 52, wherein the at least one device comprises a detector to detect said interferometric change and an analyzer for controlling the chemical mechanical polisher in response to the detected interferometric change.

58. A method of claim 52, wherein the light directed through the polishing pad to the at least one section of the film comprises at least one wavelength between 200 and 11,000 nanometers;

and

the interferometric change in the reflected light is analyzed over one or more wavelengths.

59. A method of claim 51, wherein more than one section of the film is illuminated.

60. A method of claim 51, wherein polishing the film comprises reducing the thickness of the film or planarizing the film.

61. A method of claim 51, wherein polishing endpoint is detected based on said interferometric change in the reflected light.

62. A method of claim 61, wherein the film is a metal film.

63. A method of claim 51, wherein the film is formed over a substrate.

64. A method of claim 63, wherein the substrate comprises at least one of an insulating material, a conductive material, a semiconductive material, a silicon wafer, a gallium arsenide wafer and a silicon on insulator.

65. A method of claim 63, wherein the substrate comprises a semiconductor device over a silicon wafer.

66. A method of claim 51, wherein the film comprises at least one of an SiO₂ layer, a spin-on-glass layer, a tungsten layer, an aluminum layer, a silicon layer and a photoresist layer.

67. A method of claim 51, wherein the film comprises a dielectric layer over a semiconductor device.

68. A method of claim 51, wherein the film comprises at least one dielectric layer over at least one metal layer.

69. A method of claim 51, wherein the film comprises a part of a semiconductor device or an integrated circuit.

70. A method of claim 51, wherein said at least one section of the film is illuminated with light including at least one wavelength between 200 and 11,000 nanometers.

71. A semiconductor device including a film processed by the method of claim 51.

72. An integrated circuit including a film processed by the method of claim 51.

73. A method of making a planarized substrate comprising

polishing a film over a substrate with a rotating polishing pad;

illuminating at least one section of the film with light transmitted through the rotating polishing pad during polishing of said at least one section; and

detecting interferometric change in light reflected from the at least one illuminated section of the film.

74. A method of claim 73, wherein polishing the film comprises polishing said film in a chemical mechanical polisher comprising

at least one light source that illuminates said at least one section by directing light through the rotating polishing pad to the film;

and at least one device that detects said interferometric change.

75. A method of claim 74, wherein the reflected light passes through and out of the rotating polishing pad before said detection step.

76. A method of claim 75, wherein said interferometric change is detected when said at least one section of the film passes over said at least one device.

77. A method of claim 75, wherein light from the light source that illuminates said at least one section and reflected light pass through a fiber optic cable embedded in the rotating polishing pad.

78. A method of claim 77, further comprising controlling thickness change in the film in response to the detected interferometric change.

79. A method of claim 74, wherein the at least one device comprises a detector to detect said interferometric change and an analyzer for controlling the chemical mechanical polisher in response to the detected interferometric change.

80. A method of claim 73, wherein more than one section of the film is illuminated.

81. A method of claim 73, wherein the at least one section is illuminated with light including at least one wavelength between 200 and 11,000 nanometers;

and

the interferometric change in the reflected light is analyzed over one or more wavelengths.

82. A method of claim 73, wherein polishing the film comprises reducing the thickness of the film or planarizing the film.

83. A method of claim 73, wherein polishing endpoint is detected based on said interferometric change in the reflected light.

84. A method of claim 83, wherein the film is a metal film.

85. A method of claim 73, wherein the film is formed directly on a substrate.

86. A method of claim 73, wherein the substrate comprises at least one of an insulating material, a conductive material, a semiconductive material, a silicon wafer, a gallium arsenide wafer and a silicon on insulator.

87. A method of claim 73, wherein the substrate comprises a semiconductor device over a silicon wafer.

88. A method of claim 73, wherein the film comprises at least one of a SiO₂ layer, a spin-on-glass layer, a tungsten layer, an aluminum layer, a silicon layer and a photoresist layer.

89. A method of claim 73 wherein the film comprises a dielectric layer over a semiconductor device.

90. A method of claim 73, wherein the film comprises at least one dielectric over at least one metal layer.

91. A method-of claim 73, wherein the film comprises a part of a semiconductor device or an integrated circuit.

92. A planarized substrate made by the method of claim 73.

93. A planarized substrate of claim 92, which is a silicon on insulator substrate.

94. A semiconductor device including a planarized substrate made by the method of claim 73.

95. An integrated circuit including a planarized substrate made by the method of claim 73.

96. In a chemical mechanical polisher for polishing a film over a substrate, the improvement comprising a polishing pad having at least one optical access through which light can be transmitted to a portion of the film on the substrate for the purpose of detecting interferometric change in reflected light generated when light is transmitted through the polishing pad to the at least one portion of the film.

97. The chemical mechanical polisher of claim 96, wherein the at least one optical access in the polishing pad is transmissive to light comprising at least one wavelength between 200 and 11,000 nanometers.

98. The chemical mechanical polisher of claim 97, wherein the at least one optical access is a portion of a fiber optic cable.

99. The chemical mechanical polisher of claim 98, further comprising means for enhancing transmission of light passing between the polishing pad and the film on the substrate.

100. The chemical mechanical polisher of claim 99, wherein the means for enhancing transmission is a focusing lens.