Use of carbon-based films in extending the lifetime of substrate processing system components

• US 5,952,060 A
• Filed: 06/14/1996
• Issued: 09/14/1999
• Est. Priority Date: 06/14/1996
• Status: Expired due to Term

• Current Assignee: B Braun Medical SAS (B. Braun Holding GmbH & Co. KG)
• Original Assignee: Applied Materials Incorporated
• Inventors: Ravi, Kramadhati
• Primary Examiner(s): Russel, Jeffrey E.
• Application Number:
  US08/664,948
• Time in Patent Office: 1,187 Days
• Field of Search: 422/241, 134/1.1, 134/1.2, 118/722, 118/723 R, 118/728, 118/504, 156/345, 427/249, 427/577, 216/46.67, 204/192.1, 204/192.16, 204/192.32, 204/298.11, 204/298.31
• US Class Current: 427/577
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: Y10S 427/103 Diamond-like carbon coating, i.e. DLC

Abstract

An apparatus for processing substrates that includes a processing chamber having an interior surface at least partially coated with a carbon-based coating. The carbon-based coating protects the interior of the chamber from etching gases and other reactants used during substrate processing. The coating also resists accumulation of residues, does not generate particulates and seals in impurities residing in the coated materials. In preferred embodiments the carbon-based coating is either diamond or a diamond-like carbon (DLC) coating. Also described is a process for protecting a processing chamber'"'"'s interior surface from the reactants used in substrate processing by coating at least portions of the surface with such a carbon-based coating.

Claims

1. A semiconductor substrate processing system comprising:

a housing, said housing including a sidewall and having an interior surface defining a processing chamber, wherein

said interior surface is at least partially coated with a diamond-like carbon coating to a desired thickness that is at least about 0.5 μ

m and

said diamond-like carbon coating coats a portion of said interior surface of said sidewall.

5. The semiconductor substrate processing system of claim 1, wherein

said diamond-like carbon coating is applied using an in situ process, and

said in situ process is controlled by a processing element.

6. The semiconductor substrate processing system of claim 5, wherein said in situ process comprises:

evacuating a process gas from said processing chamber;

introducing a coating process gas for creating said diamond-like carbon coating;

forming a plasma from said coating process gas, to deposit said diamond-like carbon coating on said interior surface of said processing chamber; and

evacuating said coating process gas from said processing chamber.

7. The semiconductor substrate processing system of claim 6, wherein said coating process gas comprises hydrogen and methane.

8. The semiconductor substrate processing system of claim 6, wherein RF power is applied at between about 3000 Watts to 5000 Watts to form said plasma.

9. The semiconductor substrate processing system of claim 6, wherein said diamond-like carbon coating is deposited at a temperature of between about 200°

C. to 250°

C.

10. The semiconductor substrate processing system of claim 6, wherein said diamond-like carbon coating is deposited at a pressure of between about 5 torr to 50 torr.

2. A semiconductor substrate processing system comprising:

a housing, said housing including a sidewall and having an interior surface defining a processing chamber, wherein

said interior surface is at least partially coated with a diamond-like carbon coating to a predetermined thickness, wherein said predetermined thickness is between about 0.5 μ

m and about 50 μ

m and

said diamond-like carbon coating coats a portion of said interior surface of said sidewall.

37. The semiconductor substrate processing system of claim 2, wherein

said diamond-like carbon coating is applied using an in situ process, and

said in situ process is controlled by a processing element.

38. The semiconductor substrate processing system of claim 37, wherein said in situ process comprises:

evacuating a process gas from said processing chamber;

introducing a coating process gas for creating said diamond-like carbon coating;

forming a plasma from said coating process gas, to deposit said diamond-like carbon coating on said interior surface of said processing chamber; and

evacuating said coating process gas from said processing chamber.

39. The semiconductor substrate processing system of claim 38, wherein said coating process gas comprises hydrogen and methane.

3. A semiconductor substrate processing system comprising:

a housing, said housing including a sidewall and having an interior surface defining a processing chamber, wherein

said interior surface is at least partially coated with a diamond-like carbon coating to a predetermined thickness, wherein said predetermined thickness is between about 0.5 μ

m and about 10 μ

m and

said diamond-like carbon coating coats a portion of said interior surface of said sidewall.

4. A semiconductor substrate processing system comprising:

a housing, said housing including a sidewall and having an interior surface defining a processing chamber, wherein

said interior surface is at least partially coated with a diamond-like carbon coating to a predetermined thickness, wherein said predetermined thickness is between about 0.5 μ

m and about 2 μ

m and

said diamond-like carbon coating coats a portion of said interior surface of said sidewall.

11. A semiconductor substrate processing system comprising:

a housing, said housing including a sidewall and having an interior surface defining a processing chamber, wherein

said interior surface is at least partially coated with a diamond-like carbon coating to a predetermined thickness, wherein said predetermined thickness is between about 0.5 μ

m and about 2 μ

m and

said diamond-like carbon coating coats a portion of said interior surface of said sidewall,

wherein said diamond-like carbon coating is applied using an in situ process that is controlled by a processing element, said in situ process comprising,

evacuating a process gas from said processing chamber;

introducing a coating process gas for creating said diamond-like carbon coating;

forming a plasma from said coating process gas, to deposit said diamond-like carbon coating on said interior surface of said processing chamber; and

evacuating said coating process gas from said processing chamber.

12. A method for operating a semiconductor substrate processing system having a housing, said housing including a sidewall and having an interior surface defining a processing chamber, said method comprising:

coating at least a portion of said interior surface, including at least a portion of said sidewall, with a diamond-like carbon coating, wherein said diamond-like carbon coating is deposited to a predetermined thickness; and

thereafter, processing one or more substrates situated within said housing.

36. The method of claim 12, wherein said predetermined thickness is between about 0.5 μ

m and about 50 μ

m.

40. The method of claim 12, wherein said coating step comprises:

evacuating process gases from said processing chamber;

introducing a coating process gas for depositing said diamond-like carbon coating;

forming a plasma from said coating process gas, to deposit said diamond-like carbon coating on said inner surface of said processing chamber; and

evacuating said coating process gas from said processing chamber.

13. A method for operating a semiconductor substrate processing system having a housing with an interior surface defining a processing chamber, said method comprising:

coating at least a portion of said interior surface with a diamond-like carbon coating, wherein said diamond-like carbon coating is deposited to a predetermined thickness between about 0.5 μ

m and about 50 μ

m;

thereafter, processing one or more substrates situated within said housing; and

wherein said coating step and said processing step are repeated iteratively.

14. The method of claim 13, wherein said coating step comprises:

evacuating process gases from said processing chamber;

introducing at least one coating process gas for depositing said diamond-like carbon coating;

forming a plasma from said coating process gas, to deposit said diamond-like carbon coating on said inner surface of said processing chamber; and

evacuating said coating process gas from said processing chamber.

15. The method of claim 13, wherein said processing step comprises:

processing n substrates;

thereafter, performing a cleaning step to clean said interior surface of said processing chamber; and

repeating said steps of processing n substrates and performing a cleaning step, until m substrates have been processed.

16. The method of claim 15, wherein m is greater than or equal to n and between 1 and 20.

17. The method of claim 13, wherein said processing step comprises:

processing n substrates;

thereafter, performing a cleaning step to clean said interior surface of said processing chamber;

thereafter, measuring a thickness of said diamond-like carbon coating that remains; and

iterating said processing step, said cleaning step and said measuring step until a minimum thickness of said diamond-like carbon coating is reached.

18. The method of claim 17, wherein said minimum thickness is between about 0.1 μ

m and about 10 μ

m.

19. The method of claim 17, wherein said minimum thickness is between about 0.5 μ

m and about 2 μ

m.

20. A semiconductor substrate processing system comprising:

a housing, having an interior surface defining a processing chamber, said interior surface being at least partially coated with a diamond coating, wherein said diamond coating is deposited to a desired thickness that is at least about 0.5 μ

m.

23. The substrate processing system of claim 20, wherein said diamond coating is deposited using an in situ process.

21. A semiconductor substrate processing system comprising:

a housing, having an interior surface defining a processing chamber, said interior surface being at least partially coated with a diamond coating, wherein said diamond coating is deposited to a predetermined thickness wherein said predetermined thickness is between about 1 μ

m and about 5 μ

m.

42. The substrate processing system of claim 21, wherein said diamond coating is deposited using an in situ process.

22. A semiconductor substrate processing system comprising:

a housing, having an interior surface defining a processing chamber, said interior surface being at least partially coated with a diamond coating, wherein said diamond coating is deposited to a predetermined thickness, wherein said predetermined thickness is between about 2 μ

m and about 5 μ

m.

24. A substrate processing system for processing a substrate comprising:

a housing, having an interior surface defining a processing chamber, said interior surface being at least partially coated with a carbon-based coating, wherein said housing includes a ceiling electrode, said interior surface consisting in part of a surface of said ceiling electrode, said surface of said ceiling electrode having a diamond coating between about 1 μ

m and about 50 μ

m in thickness; and

a substrate holder, located within said housing, for holding said substrate during processing.

25. A method for processing substrates in a substrate processing system having a housing with an interior surface defining a processing chamber, said method comprising:

coating at least a portion of said interior surface with a diamond coating, wherein said diamond coating is deposited to a predetermined thickness; and

thereafter, processing one or more substrates situated within said housing.

26. The method of claim 25, wherein said predetermined thickness is between about 1 μ

m and about 50 μ

m.

27. The method of claim 26, wherein said coating step and said processing step are repeated iteratively.

28. The method of claim 27, wherein said coating step comprises:

evacuating process gases from said processing chamber;

introducing at least one coating process gas for depositing said diamond coating;

forming a plasma from said coating process gas, to deposit said diamond coating on said inner surface of said processing chamber; and

evacuating said coating process gas from said processing chamber.

29. The method of claim 27, wherein said processing step comprises:

processing n substrates;

thereafter, performing a cleaning step to clean said interior surface of said processing chamber; and

repeating said steps of processing n substrates and performing a cleaning step, until m substrates have been processed.

30. The method of claim 29, wherein m is greater than or equal to n and between 1 and 20.

31. The method of claim 27, wherein said processing step comprises:

processing n substrates;

thereafter, performing a cleaning step to clean said interior surface of said processing chamber;

thereafter, measuring a thickness of said diamond coating that remains; and

iterating said processing step, said cleaning step and said measuring step until a minimum thickness of said diamond coating is reached.

32. The method of claim 31, wherein said minimum thickness is between about 0.1 μ

m and about 10 μ

m.

33. The method of claim 31, wherein said minimum thickness is between about 0.5 μ

m and about 2 μ

m.

34. A substrate processing system comprising:

a housing, having an interior surface defining a processing chamber;

a pedestal, located within said housing, for holding a substrate during processing;

a vacuum pump for evacuating said processing chamber;

a gas distribution system for introducing at least one process gas and a coating process gas into said processing chamber;

a plasma generation system for creating a plasma within said processing chamber;

a controller for controlling said vacuum pump, said gas distribution system and said plasma generation system; and

a memory coupled to said controller comprising a computer readable medium having a computer readable program embodied therein for directing operation of said substrate processing system, said computer readable program comprising;

a first set of computer instructions for controlling said gas distribution system to evacuate said at least one process gas from said processing chamber;

a second set of computer instructions for controlling said gas distribution system to introduce said coating process gas for creating a carbon-based coating;

a third set of computer instructions for controlling said plasma generation system to form a plasma from said coating process gas, to deposit said carbon-based coating on said inner surface of said processing chamber, wherein said carbon-based coating comprises a diamond coating; and

a fourth set of computer instructions for controlling said gas distribution system to evacuate said coating process gas from said processing chamber.

35. A substrate processing system comprising:

a housing, having an interior surface defining a processing chamber;

a pedestal, located within said housing, for holding a substrate during processing;

a vacuum pump for evacuating said processing chamber;

a gas distribution system for introducing at least one process gas and a coating process gas into said processing chamber;

a plasma generation system for creating a plasma within said processing chamber;

a controller for controlling said vacuum pump, said gas distribution system and said plasma generation system; and

a memory coupled to said controller comprising a computer readable medium having a computer readable program embodied therein for directing operation of said substrate processing system, said computer readable program comprising;

a first set of computer instructions for controlling said gas distribution system to evacuate said at least one process gas from said processing chamber;

a second set of computer instructions for controlling said gas distribution system to introduce said coating process gas for creating a carbon-based coating;

a third set of computer instructions for controlling said plasma generation system to form a plasma from said coating process gas, to deposit said carbon-based coating on said inner surface of said processing chamber, wherein said carbon-based coating comprises a diamond-like carbon coating; and

a fourth set of computer instructions for controlling said gas distribution system to evacuate said coating process gas from said processing chamber.

41. A method for operating a semiconductor substrate processing system having a housing with an interior surface defining a processing chamber, said method comprising:

introducing a coating process gas into said housing to coat, to a predetermined thickness, at least a portion of said interior surface with a diamond-like carbon coating;

evacuating said coating process gas from said processing chamber; and

thereafter, processing one or more substrates within said housing.

43. The method of claim 41, wherein said diamond-like carbon coating is deposited from a plasma of said coating process gas.