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Silicon oxide on a substrate

  • US 5,952,108 A
  • Filed: 09/26/1997
  • Issued: 09/14/1999
  • Est. Priority Date: 04/29/1993
  • Status: Expired due to Term
First Claim
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1. A product comprising a deposit of silicon oxide on a substrate formed by a method comprising the steps of moving the substrate through an electrical discharge region;

  • subjecting the substrate to an electrical discharge in said region in the presence of an atmosphere containing (a) a silane, (b) oxygen or a gaseous compound containing oxygen and (c) a carrier gas;

    maintaining said atmosphere at a pressure higher than 10,000 Pa;

    circulating said atmosphere in said region and preventing entrainment of oxygen other than that forming part of said atmosphere in said region, thereby forming silicon oxide on said substrate.

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