Display device

• US 5,952,708 A
• Filed: 11/18/1996
• Issued: 09/14/1999
• Est. Priority Date: 11/17/1995
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Ngo , Ngan V.
• Application Number:
  US08/751,338
• Time in Patent Office: 1,030 Days
• Field of Search: 257/59, 257/72, 257/350, 257/641, 257/643
• US Class Current: 257/643
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/78633 with a light shield

Abstract

A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.

Claims

1. An electro-optical device comprising:

a thin film transistor;

a first layer insulation film made of silicon oxide or silicon nitride provided relative to said thin film transistor;

a second layer insulation film made of polyimide resin or acrylic resin, provided for flattening a surface irregularity of said first layer insulation film, said second layer insulation film being relative to said first layer insulation film; and

a masking film providing shading of said thin film transistor, provided relative to said second layer insulation film and said thin film transistor, said masking film being made of chromium.

2. The device of claim 1 wherein said thin film transistor comprises:

a source region and a drain region provided on an insulating surface;

a channel region provided on said insulating surface between said source region and said drain region;

a gate insulating film provided on said channel region; and

a gate electrode provided on said gate insulating film.

3. The device of claim 1 wherein said thin film transistor comprises:

a gate electrode provided on an insulating surface;

a gate insulating film provided on said gate electrode;

a channel region provided on said gate insulating film; and

a source region and a drain region sandwiching said channel region therebetween.

4. An electro-optical device comprising:

a thin film transistor;

a first layer insulation film made of inorganic material provided relative to said thin film transistor;

a wiring provided relative to said first layer insulation film;

a transparent organic film provided over said wiring for flattening a surface irregularity of said first layer insulation film and said wiring; and

a masking film provided relative to said transparent organic film and said thin film transistor.

5. The device of claim 4 wherein a metal material is used as the material of said masking film.

6. The device of claim 4 wherein said thin film transistor comprises:

a source region and a drain region provided on an insulating surface;

a channel region provided on said insulating surface between said source region and said drain region;

a gate insulating film provided on said channel region; and

a gate electrode provided on said gate insulating film.

7. The device of claim 4 wherein said thin film transistor comprises:

a gate electrode provided on an insulating surface;

a gate insulating film provided on said gate electrode;

a channel region provided on said gate insulating film; and

a source region and a drain region sandwiching said channel region therebetween.

8. The device of claim 4 wherein said masking film is made of chromium.

9. The device of claim 4 wherein said transparent organic film is made of polyimide resin or acrylic resin.

10. An electro-optical device comprising:

a thin film transistor;

a first layer insulation film made of inorganic material provided relative to said thin film transistor;

a wiring provided relative to said first layer insulation film;

a transparent organic film provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring;

a masking film comprising aluminum provided relative to said transparent organic film and said thin film transistor; and

an anodic oxide of the aluminum of said masking film provided on a surface of said masking film and colored in a dark color.

11. An electro-optical device comprising:

a thin film transistor;

a first layer insulation film made of inorganic material provided relative to said thin film transistor;

a wiring provided relative to said first layer insulation film;

a transparent organic film provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring;

a masking film comprising tantalum provided relative to said transparent organic film and said thin film transistor; and

an anodic oxide of the tantalum of said masking film provided on a surface of said masking film and colored in a dark color.

12. An electro-optical device comprising:

a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said drain region, a gate electrode provided adjacent to said channel region with a gate insulating film between said gate electrode and said channel region;

a first layer insulation film made of inorganic material provided relative to said thin film transistor;

a wiring provided relative to said first layer insulation film;

a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring;

a masking film provided relative to said second layer insulation film and said thin film transistor;

a third layer insulation film made of a transparent organic material provided relative to said masking film; and

an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.

13. The device of claim 12 wherein said masking film is made of chromium.

14. The device of claim 12 wherein said second layer insulation film is made of polyimide resin or acrylic resin.

15. The device of claim 12 wherein said third layer insulation film is made of polyimide resin or acrylic resin.

16. An electro-optical device comprising:

a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said drain region, a gate electrode provided adjacent to said channel region with a gate insulation film between said channel region and said gate electrode;

a first layer insulation film made of inorganic material provided relative to said thin film transistor;

a wiring provided relative to said first layer insulation film;

a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring;

a masking film comprising aluminum provided relative to said second layer insulation film and said thin film transistor;

an anodic oxide of the aluminum of said masking film provided on a surface of said masking film and colored in a dark color;

a third layer insulation film made of a transparent organic material provided relative to said masking film and said anodic oxide; and

an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.

17. An electro-optical device comprising:

a thin film transistor comprising a source region and a drain region, a channel region provided between said source region and said draining region, a gate electrode provided adjacent to said channel region with a gate insulation film therebetween;

a first layer insulation film made of inorganic material provided relative to said thin film transistor;

a wiring provided relative to said first layer insulation film;

.

a second layer insulation film made of a transparent organic material provided relative to said wiring and flattening a surface irregularity of said first layer insulation film and said wiring;

a masking film comprising tantalum provided relative to said second layer insulation film and said thin film transistor;

an anodic oxide of the tantalum of said masking film provided on a surface of said masking film and colored in a dark color;

a third layer insulation film made of a transparent organic material provided relative to said masking film and said anodic oxide; and

an indium tin oxide electrode provided relative to said third layer insulation film and connected with one of said source region and said drain region through a contact hole provided at least in said first, second and third layer insulation films.