Packaged semiconductor device and method of manufacturing the same

• US 5,952,712 A
• Filed: 07/16/1997
• Issued: 09/14/1999
• Est. Priority Date: 07/18/1996
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Utsumi, Kazuaki, Shimada, Yuzo, Ikuina, Kazuhiro
• Primary Examiner(s): Kelley, Nathan K.
• Application Number:
  US08/893,988
• Time in Patent Office: 790 Days
• Field of Search: 257/686, 257/774, 257/723, 257/725, 257/777, 257/678
• US Class Current: 257/678
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

A packaged semiconductor device includes an LSI chip, a chip size package integrally bonded to the LSI chip to mount and hold the LSI chip thereon in order to connect an electrode of a board on which the LSI chip is to be mounted and an electrode of the LSI chip to each other, an electrode formed on a surface of the package opposite to a surface thereof which is bonded to the LSI chip, so as to be connected to the electrode of the board, at least one through hole formed to extend through the LSI chip and the package, and a connecting conductor formed to extend through the through hole in order to connect the electrode of the package and the electrode of the LSI package to each other.

Claims

1. A packaged semiconductor device comprising:

an LSI chip having an electrode positioned on an upper surface of said LSI chip;

a chip size package integrally bonding to said LSI chip on an opposite surface of said LSI chip electrode, and further connecting an electrode of a board on which said LSI chip is to be mounted and said LSI chip electrode to each other;

an electrode formed on a surface of said package opposite to said surface bonded to said LSI chip, said package surface connecting to said board electrode;

at least one through hole extending through said LSI chip and said package; and

a connecting conductor extending through the through hole of said LSI chip and said package and further extending on the upper surface of said LSI chip to a side surface of said LSI chip electrode so as to connect the side surface of said LSI chip electrode and said package electrode to each other.

11. A device according to claim 1, wherein said package and said LSI chip are bonded to each other by using glass as an adhesive.

12. A device according to claim 11, wherein the glass serving as the adhesive has a low softening temperature and can maintain a viscosity at about 1,000°

C.

13. A device according to claim 1, wherein said package is formed of a multilayer substrate.

2. A device according to claim 2, wherein said package is made of a material having a thermal expansion coefficient close to that of an Si wafer constituting said LSI chip.

3. A device according to claim 2, wherein said package is made of glass.

4. A device according to claim 2, wherein said package is made of a ceramic.

5. A device according to claim 3, wherein said package is made of SiO₂ -based glass.

6. A device according to claim 4, wherein said package is made of glass ceramic.

7. A device according to claim 4, wherein said package is made of alumina.

8. A device according to claim 4, wherein said package is made of mullite.

9. A device according to claim 4, wherein said package is made of cordierite.

10. A device according to claim 4, wherein said package is made of aluminum nitride.