Transmission type liquid crystal display device having capacitance ratio of 10% or less and charging rate difference of 0.6% or less
First Claim
1. A liquid crystal display device, comprising:
- gate lines;
source lines; and
switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, whereinan interlayer insulating film is above the switching element, the gate line, and the source line,the pixel electrode is on the interlayer insulating film,wherein a capacitance ratio is represented by expression;
space="preserve" listing-type="equation">Capacitance ratio=C.sub.sd /(C.sub.sd +C.sub.ls), andthe ratio is 10% or less, wherein Csd denotes a capacitance value between the pixel electrode and the source line, and Cls denotes a capacitance value of a liquid crystal portion corresponding to each pixel in an intermediate display state.
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Abstract
The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.
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Citations
22 Claims
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1. A liquid crystal display device, comprising:
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gate lines;
source lines; and
switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, whereinan interlayer insulating film is above the switching element, the gate line, and the source line, the pixel electrode is on the interlayer insulating film, wherein a capacitance ratio is represented by expression;
space="preserve" listing-type="equation">Capacitance ratio=C.sub.sd /(C.sub.sd +C.sub.ls), andthe ratio is 10% or less, wherein Csd denotes a capacitance value between the pixel electrode and the source line, and Cls denotes a capacitance value of a liquid crystal portion corresponding to each pixel in an intermediate display state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A liquid crystal display device comprising:
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gate lines;
source lines; and
switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, whereinan interlayer insulating film is above the switching element, the gate line, and the source line, the pixel electrode is on the interlayer insulating film, and a charging rate difference of 0.6% or less, wherein the charge rate difference indicates a ratio of an effective value of a voltage applied to the liquid crystal layer in a gray scale display portion when the gray scale is uniformly displayed to that when a black window pattern is displayed in the gray scale display at a vertical occupation of 33%. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. An active matrix substrate, comprising:
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gate lines;
source lines; and
switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, a drain electrode of the switching element being connected to an electrode for forming a capacitance, whereinan interlayer insulating film is above the switching element, the gate line, and the source line, the electrode for forming a capacitance is on the interlayer insulating film, wherein a capacitance ratio is represented by expression;
space="preserve" listing-type="equation">Capacitance ratio=C.sub.sd /(C.sub.sd +C.sub.ls), andthe ratio is 10% or less, wherein Csd denotes a capacitance value between the electrode for forming a capacitance and the source line, and Cls denotes a capacitance value of the capacitance corresponding to the electrode for forming a capacitance.
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22. An active matrix substrate comprising:
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gate lines;
source lines; and
switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, a drain electrode of the switching element being connected to an electrode for forming a capacitance, whereinan interlayer insulating film is above the switching element, the gate line, and the source line, the electrode for forming a capacitance is on the interlayer insulating film, and a charging rate difference of 0.6% or less, wherein the charge rate difference indicates a ratio of an effective value of a voltage applied to the electrode for forming a capacitance.
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Specification