Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration
First Claim
1. A optical waveguide, comprising:
- a substrate;
a bottom cladding layer disposed on said substrate;
a core layer having a quantum well optical waveguiding double heterostructure;
a top cladding layer;
said quantum well optical waveguiding double heterostructure further comprising;
a first barrier layer constructed of InGaPAs being atop said bottom cladding layer;
a quantum well layer, constructed of Inx Ga1-x-y Aly As, where x is centered at about 53% of mole fraction, having a variation of between 40% to 70% of mole fraction, y linearly increases from 0 to y1, where y1 ranges between 7% to 20% of mole fraction, said quantum well layer having a band gap energy of 0.79 to 1 eV and being stacked on top of said first barrier layer;
a second barrier layer, constructed of IN.sub..52 AlGaAs, stacked on top of said quantum well core layer, said second barrier layer being lattice matched to InP with a bandgap energy of 1.0 to 1.3 eV;
said Inx Ga1-x-y Aly As of the quantum well layer, being graded from one side to the other forming a quantum well energy bandgap linearly increasing to a first interface point where said first barrier layer and said quantum well layer interface and to a second interface point where said quantum well layer and said second barrier layer interface;
a first conduction band offset ratio at said first interface being smaller than a second conduction band offset ratio at said second interface;
a valence band being tilted; and
said first barrier layer energy bandgap being greater than said quantum well energy bandgap, said quantum well energy bandgap being lesser than said second barrier layer energy bandgap.
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Abstract
Opto-electronic integrated waveguide devices are provided using a tilted valence band quantum well semiconductor double heterostructure with one growth of the same waveguide material, that operate simply by their normal operating forward bias for active waveguides with optical gain and operating in a reverse or no bias for active waveguide without optical gain or passive waveguides. The optical waveguides comprise a substrate, a bottom cladding layer, a core layer having a quantum well optical waveguiding double heterostructure and a top cladding layer. The quantum well optical waveguiding double heterostructure includes an InGaPAs first barrier layer atop the bottom cladding layer, a quantum well layer constructed of InxGa1-x-y Aly As is stacked on top of the first barrier layer which is graded from one side to the other forming a linearly increasing quantum well energy bandgap and an In.sub..52 AlGaAs second barrier layer is stacked on top of said quantum well core layer. The quantum well layer provides a first conduction band offset ratio at a first interface point smaller than a second conduction band offset ratio at a second interface point, as well as a valence band being tilted, with the first barrier layer energy bandgap being greater than the quantum well energy bandgap, and the quantum well energy bandgap being lesser than said second barrier layer energy bandgap. The first barrier layer, quantum well layer and second barrier layer can be coextensive with one another.
82 Citations
20 Claims
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1. A optical waveguide, comprising:
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a substrate; a bottom cladding layer disposed on said substrate; a core layer having a quantum well optical waveguiding double heterostructure; a top cladding layer; said quantum well optical waveguiding double heterostructure further comprising; a first barrier layer constructed of InGaPAs being atop said bottom cladding layer; a quantum well layer, constructed of Inx Ga1-x-y Aly As, where x is centered at about 53% of mole fraction, having a variation of between 40% to 70% of mole fraction, y linearly increases from 0 to y1, where y1 ranges between 7% to 20% of mole fraction, said quantum well layer having a band gap energy of 0.79 to 1 eV and being stacked on top of said first barrier layer; a second barrier layer, constructed of IN.sub..52 AlGaAs, stacked on top of said quantum well core layer, said second barrier layer being lattice matched to InP with a bandgap energy of 1.0 to 1.3 eV; said Inx Ga1-x-y Aly As of the quantum well layer, being graded from one side to the other forming a quantum well energy bandgap linearly increasing to a first interface point where said first barrier layer and said quantum well layer interface and to a second interface point where said quantum well layer and said second barrier layer interface; a first conduction band offset ratio at said first interface being smaller than a second conduction band offset ratio at said second interface; a valence band being tilted; and said first barrier layer energy bandgap being greater than said quantum well energy bandgap, said quantum well energy bandgap being lesser than said second barrier layer energy bandgap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification