Method for fabricating semiconductor wafers
First Claim
1. A method for fabricating semiconductor wafers, comprising the steps of:
- providing a first wafer and a second wafer;
forming a thermal oxide film over the first wafer;
implanting oxygen ions in the second wafer, thereby forming an oxygen ion-implanted region;
implanting hydrogen ions in the second wafer, thereby forming a hydrogen ion-implanted region shallower than the oxygen ion-implanted region;
bonding the upper surface of the second wafer to the upper surface of the thermal oxide film formed over the first wafer;
annealing the bonded wafers;
cutting the bonded wafers along the hydrogen ion-implanted region, thereby forming a first silicon-on-insulator (SOI) wafer and a bare wafer;
annealing the first SOI wafer, thereby strengthening a chemical coupling property of the first SOI wafer;
annealing the bare wafer in such a manner that the oxygen ion-implanted region included in the bare wafer is oxidized, thereby forming a second SOI wafer; and
planarizing the surfaces of the first and second SOI wafers.
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Abstract
A method for fabricating silicon-on-insulator (SOI) wafers which is capable of simplifying the fabrication process while improving the productivity of SOI wafers. In accordance with this method, a first wafer formed with a thermal oxide film is bonded to a second wafer formed with an oxygen ion-implanted region and a hydrogen ion-implanted region. The bonded wafer structure is annealed and then cut along the hydrogen ion-implanted region, so that it is divided into two wafer structures. The wafer structure including the first wafer is annealed to obtain a strengthened chemical coupling property. The wafer structure including the second wafer is annealed to oxidize the oxygen ion-implanted region of the second wafer, thereby forming an oxide film in the second wafer. The first and second wafers are then planarized, thereby forming a pair of SOI wafers.
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Citations
20 Claims
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1. A method for fabricating semiconductor wafers, comprising the steps of:
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providing a first wafer and a second wafer; forming a thermal oxide film over the first wafer; implanting oxygen ions in the second wafer, thereby forming an oxygen ion-implanted region; implanting hydrogen ions in the second wafer, thereby forming a hydrogen ion-implanted region shallower than the oxygen ion-implanted region; bonding the upper surface of the second wafer to the upper surface of the thermal oxide film formed over the first wafer; annealing the bonded wafers; cutting the bonded wafers along the hydrogen ion-implanted region, thereby forming a first silicon-on-insulator (SOI) wafer and a bare wafer; annealing the first SOI wafer, thereby strengthening a chemical coupling property of the first SOI wafer; annealing the bare wafer in such a manner that the oxygen ion-implanted region included in the bare wafer is oxidized, thereby forming a second SOI wafer; and planarizing the surfaces of the first and second SOI wafers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating semiconductor wafers, comprising the steps of:
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providing a first wafer and a second wafer; forming a first thermal oxide film over the first wafer; forming a second thermal oxide film over the second wafer; sequentially implanting oxygen ions and hydrogen ions in the second wafer, thereby forming an oxygen ion-implanted region and a hydrogen ion-implanted region; bonding the upper surface of the second wafer to the upper surface of the first wafer; annealing the bonded wafers; cutting the bonded wafers along the hydrogen ion-implanted region, thereby forming a first silicon-on-insulator (SOI) wafer and a bare wafer; annealing the first SOI wafer, thereby strengthening a chemical coupling property of the first SOI wafer; annealing the bare wafer in such a manner that the oxygen ion-implanted region included in the bare wafer is oxidized, thereby forming a second SOI wafer; and planarizing the surfaces of the first and second SOI wafers. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification