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Method for fabricating semiconductor wafers

  • US 5,953,622 A
  • Filed: 09/15/1997
  • Issued: 09/14/1999
  • Est. Priority Date: 11/23/1996
  • Status: Expired due to Term
First Claim
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1. A method for fabricating semiconductor wafers, comprising the steps of:

  • providing a first wafer and a second wafer;

    forming a thermal oxide film over the first wafer;

    implanting oxygen ions in the second wafer, thereby forming an oxygen ion-implanted region;

    implanting hydrogen ions in the second wafer, thereby forming a hydrogen ion-implanted region shallower than the oxygen ion-implanted region;

    bonding the upper surface of the second wafer to the upper surface of the thermal oxide film formed over the first wafer;

    annealing the bonded wafers;

    cutting the bonded wafers along the hydrogen ion-implanted region, thereby forming a first silicon-on-insulator (SOI) wafer and a bare wafer;

    annealing the first SOI wafer, thereby strengthening a chemical coupling property of the first SOI wafer;

    annealing the bare wafer in such a manner that the oxygen ion-implanted region included in the bare wafer is oxidized, thereby forming a second SOI wafer; and

    planarizing the surfaces of the first and second SOI wafers.

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