Non-volatile memory device for fault tolerant data

• US 5,954,828 A
• Filed: 12/05/1995
• Issued: 09/21/1999
• Est. Priority Date: 01/05/1995
• Status: Expired due to Term

• Current Assignee: Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Lin, Tien-Ler
• Primary Examiner(s): LE, DIEU MINH T
• Application Number:
  US08/553,635
• Time in Patent Office: 1,386 Days
• Field of Search: 395/182.06, 395/182.03, 395/182.05, 395/183.18, 395/185.07, 371/21.1, 371/21.6, 371/10.2, 371/40.4, 371/40.13, 371/40.18, 365/201, 365/218, 711/102, 711/114
• US Class Current: 714/723
• CPC Class Codes: G06F 11/008 Reliability or availability analysis
• CPC Class Codes: G11C 29/88 with partially good memories

Abstract

A non-volatile memory device based on an array of floating gate memory cells includes read, erase, program and verify control logic for the array. A status register is coupled with the control logic and stores statistics determined during verify operations concerning at least one of the erase and program operations. For instance, the control logic may include erase verify resources and program verify resources, and the statistics will indicate a number of memory cells which fail erase or program verify. Alternatively, the statistics may indicate whether a threshold number of sequential bytes in the memory fail program verify for a program or erase operation involving a page or sector of data. In addition, defective addresses can be stored. With the status register, the number of program and erase retries for the device can be significantly reduced, allowing application of the device to real time storage systems. Many real time storage problems are fault tolerant. That is, a number of errors in a large amount of data will not be significant. Thus, the user of the device can rely on the status register to indicate how many errors have been detected in the array. If more than a threshold number of errors is detected, then the data can be discarded. However, for fault tolerant applications, the device will store a significant amount of data with few errors which will not affect operation of the system.

Claims

1. A non-volatile memory device, comprising:

an integrated circuit;

an array of floating gate memory cells on the integrated circuit;

read, erase, program and verify control logic for the array on the integrated circuit; and

a status register on the integrated circuit, coupled with the control logic, to store defect statistics for a program operation in which a plurality of bytes is programmed to the array, and the defect statistics characterize defects determined during verify operations concerning the plurality of bytes, and logic coupled with the status register which overwrites the defect statistics of a previous program operation.

2. The memory device of claim 1, wherein the control logic includes erase verify resources, and the stored defect statistics indicate a number of defects.

3. The memory device of claim 1, wherein the control logic includes program verify resources, and the stored defect statistics indicate a number of defects.

4. The memory device of claim 1, wherein the control logic includes program verify resources, and the stored defect statistics indicate whether a threshold number of sequential bytes fail program verify.

5. The memory device of claim 1, wherein the control logic includes circuitry which retries program operations for bits in the plurality of bytes which fail program verify, until a maximum retry count is reached.

6. The memory device of claim 1, including a first buffer which receives input data, and a second buffer coupled to the first buffer and to the array, and wherein the control logic executes a program operation which transfers data from the first buffer to the second buffer, and programs data in the second buffer to the array in parallel.

7. The memory device of claim 1, wherein the stored defect statistics include an address of a byte which fails verify.

8. The memory device of claim 1, wherein the control logic includes erase verify resources, and the stored defect statistics indicate a number of bytes including bits stored in memory cells which fail erase verify.

9. The memory device of claim 8, wherein the stored defect statistics include an address of a byte which fails erase verify.

10. The memory device of claim 1, wherein the control logic includes program verify resources, and the stored defect statistics indicate a number of bytes including bits in the plurality of bytes which fail program verify.

11. The memory device of claim 10, wherein the stored defect statistics includes an address of a byte including a bit in the plurality of bytes which fails program verify.

12. The memory of claim 1, wherein the status register comprises a static random access memory.

13. The memory of claim 1, wherein the status register includes a first field which stores information concerning memory configuration including an indication whether a defect was detected in a preceding erase or program verify operation, and a second field which stores a count of defects detected in the preceding erase or program verify operation.

14. The memory of claim 13, wherein the status register includes a third field which stores an address of a byte including a bit in the plurality of bytes which fails verify.

15. The memory device of claim 1, including logic responsive to a command to clear at least a portion of the defect statistics in the status register.

16. A non-volatile memory device, comprising:

an integrated circuit;

an array of floating gate memory cells on the integrated circuit, and the array including a first section and a second section; and

read, erase, program and verify control logic for the array on the integrated circuit, and the control logic including circuitry which retries a program operation in which a plurality of bytes is programmed to the array for bits in the plurality of bytes programmed to the first section of the array which fail program verify until a first maximum retry count is reached, and which retries program operations for bits in a plurality of bytes programmed to the second section of the array which fail program verify until a second maximum retry count is reached, and the first maximum retry count being greater than the second maximum retry count.

17. The memory device of claim 16, wherein the first section stores header information concerning data in the second section.

18. The memory device of claim 16, including a first buffer which receives input data, and a second buffer coupled to the first buffer and to the array, and wherein the control logic executes a program operation which transfers data from the first buffer to the second buffer, and programs data in the second buffer to the array in parallel.

19. A non-volatile memory device for fault tolerant data storage, comprising:

an array of floating gate memory cells;

a data input, which receives an input data stream;

a buffer memory, coupled to the input, which receives data from the data input and applies the received data to the array for programming;

erase, program and verify control logic, coupled to the buffer memory, including resources for programming the array with data from the buffer memory, and for erasing at least portions of the array;

a volatile status register, coupled with the control logic, to store defect statistics characterizing defects determined during verify operations concerning at least one of programming and erasing operations; and

read control logic, coupled to the array and to the status register, providing read access to the array and to the status register.

20. The memory device of claim 19, wherein the stored defect statistics indicate a number of defects detected in an operation involving a plurality of bytes of data.

21. The memory device of claim 19, wherein the stored defect statistics indicate whether a threshold number of sequential bytes include bits in a plurality of bytes programmed to the array which fail program verify.

22. The memory device of claim 19, wherein the control logic includes circuitry which retries programming operations for bits in a plurality of bytes programmed to the array which fail program verify, until a maximum retry count is reached, and if the maximum retry count is reached for a particular byte, then logs a program defect to the status register.

23. The memory device of claim 19, wherein the buffer memory includes a first buffer which receives input data from the data input, and a second buffer coupled to the first buffer and to the array, and wherein the control logic executes a program operation which transfers data from the first buffer to the second buffer, and programs data in the second buffer to the array in parallel.

24. The memory device of claim 19, wherein the stored defect statistics include an address of a byte which fails verify.

25. The memory device of claim 19, wherein the control logic includes erase verify resources, and the stored defect statistics indicate a number of bytes including bits stored in memory cells which fail erase verify for an erased sector of the array.

26. The memory device of claim 25, wherein the stored defect statistics include an address of a byte which fails erase verify.

27. The memory device of claim 19, wherein the control logic includes program verify resources, and the stored defect statistics indicate a number of bytes including bits programmed to memory cells which fail program verify for a program operation involving a plurality of bytes of data.

28. The memory device of claim 27, wherein the stored defect statistics include an address of a byte including a bit programmed to a memory cell which fails program verify.

29. The memory device of claim 19, wherein the status register comprises a static random access memory.

30. The memory device of claim 19, wherein the status register includes a first field which stores information concerning memory configuration including an indication whether a defect was detected in a preceding erase or program verify operation involving a plurality of bytes of data, and a second field which stores a count of defects detected in the preceding erase or program verify operation.

31. The memory device of claim 30, wherein the status register includes a third field which stores an address of a byte including a bit programmed to a memory cell which fails verify.

32. A non-volatile memory device for fault tolerant data storage, comprising:

an array of floating gate memory cells and the array including a first section and a second section;

a data input, which receives an input data stream;

a buffer memory, coupled to the input, which receives data from the data input and applies the received data to the array for programming;

erase, program and verify control logic, coupled to the buffer memory, including resources for programming the array with data from the buffer memory, and for erasing at least portions of the array, and the control logic including circuitry which retries program operations for bits in a particular byte programmed to the first section of the array which fail program verify until a first maximum retry count is reached and if the first maximum retry count is reached for the particular byte, then signals program failure, and which retries program operations for bits in a particular byte programmed to the second section of the array which fail program verify until a second maximum retry count is reached and if the second maximum retry count is reached for the particular byte, then logs a defect, and the first maximum retry count being greater than the second maximum retry count; and

read control logic, coupled to the array and to the status register, providing read access to the array.

33. The memory device of claim 32, wherein the first section stores header information concerning data in the second section.

34. A non-volatile memory device for real-time, fault tolerant data storage, comprising:

an array of non-volatile, floating gate memory cells;

a data input which receives input data;

a page program buffer, coupled to the data input, which receives the input data and applies a page of input data in parallel to the array for programming, the page including more than 32 bits;

erase, program and verify control logic, coupled to the page program buffer, including resources for programming the array with data from the page program buffer, and including resources for erasing selected segments of data in the array;

a status register comprising volatile storage cells, coupled with the erase, program and verify control logic, to store defect statistics characterizing defects determined during verify operations; and

read control logic, coupled to the array and to the status register, providing read access to the array and to the status register.

35. The memory device of claim 34, wherein the stored defect statistics indicate a number of defects.

36. The memory device of claim 34, wherein the control logic includes circuitry which retries page program operations for bits in a particular byte programmed to the array which fail program verify, until a maximum retry count is reached, and if the maximum retry count is reached for the particular byte, then logs a program defect to the status register.

37. The memory device of claim 34, wherein the page program buffer includes a first buffer which receives input data, and a second buffer coupled to the first buffer and to the array, and wherein the control logic executes a program operation which transfers data from the first buffer to the second buffer, and programs data in the second buffer to the array in parallel.

38. The memory device of claim 34, wherein the stored defect statistics indicate a whether a threshold number of sequential bytes fail program verify.

39. The memory device of claim 34, wherein the stored defect statistics include an address of a byte which fails verify.

40. The memory device of claim 34, wherein the control logic includes erase verify resources, and the stored defect statistics indicate a number of bytes including bits stored in memory cells which fail erase verify.

41. The memory device of claim 40, wherein the stored defect statistics include an address of a byte which fails erase verify.

42. The memory device of claim 34, wherein the control logic includes program verify resources, and the stored defect statistics indicate a number of bytes including bits programmed to memory cells which fail program verify.

43. The memory device of claim 42, wherein the stored defect statistics include an address of a byte including a bit programmed to a memory cell which fails program verify.

44. The memory device of claim 34, wherein the status register comprises a static random access memory.

45. The memory device of claim 34, wherein the status register includes a first field which stores information concerning memory configuration including an indication whether a defect was detected in a preceding erase or program verify operation, and a second field which stores a count of defects detected in the preceding erase or program verify operation.

46. The memory device of claim 45, wherein the status register includes a third field which stores an address of a byte including one of a bit stored in a memory cell and a bit programmed to a memory cell which fails verify.

47. A non-volatile memory device for real-time, fault tolerant data storage, comprising:

an array of non-volatile, floating gate memory cells, and the array including a first section and a second section;

a data input which receives input data;

a page program buffer, coupled to the data input, which receives the input data and applies a page of input data in parallel to the array for programming, the page including more than 32 bits;

erase, program and verify control logic, coupled to the page program buffer, including resources for programming the array with data from the page program buffer, and including resources for erasing selected segments of data in the array; and

read control logic coupled to the array, and the control logic providing read access to the array, and the control logic including circuitry which retries page programming operations for bits in a particular byte programmed to the first section of the array which fail program verify until a first maximum retry count is reached and if the first maximum retry count is reached for the particular byte programmed to the first section of the array, then signals program failure, and which retries page programming operations for bits in a particular byte programmed to the second section of the array which fail program verify until a second maximum retry count is reached and if the second maximum retry count is reached for the particular byte programmed to the second section of the array, then logs a program defect; and

the first maximum retry count being greater than the second maximum retry count.

48. The memory device of claim 47, wherein the first section stores header information concerning data in the second segment.

49. The memory device of claim 47, wherein the first and second maximum retry counts are equal.

50. A method for storing data on an integrated circuit having an array of floating gate memory cells, comprising:

programming a segment of data to the array, the segment including a plurality of bytes of data;

executing a verify operation for the segment;

determining during the verify operation defect statistics characterizing defects in the programmed segment;

storing the defect statistics on the integrated circuit;

reading the defect statistics from the integrated circuit after the program operation; and

clearing the defect statistics from the integrated circuit.

51. The method of claim 50, wherein the verify operation includes retrying the programming of data within the segment a maximum number of retries, and if the maximum number of retries is reached, then logging a defect in the statistics.

52. The method of claim 50, wherein the step of storing the defect statistics includes providing a first field which stores information concerning memory configuration including an indication whether a defect was detected in a preceding program verify operation, and a second field which stores a count of defects detected in the preceding program verify operation, and the step of reading includes reading the first field to determine whether a defect was detected, and reading the second field if a defect was detected.

53. The method of claim 52, including providing a third field which stores an address of a byte including a bit programmed to a memory cell which fails verify, and including reprogramming the byte indicated in another location.

54. The method of claim 50, wherein the step of programming includes programming a page of data in parallel, a page including more than four bytes.

55. The method of claim 50, wherein the step of storing defect statistics includes providing a first field which stores a count of defects detected in the preceding program verify operation, and a second field which stores an address of a byte including one of a bit stored in a memory cell and a bit programmed to a memory cell which fails verify, and wherein the step of reading includes reading the first field to determine whether a defect was detected, and reading the second field if defect was detected.

56. A non-volatile memory device, comprising:

an array of floating gate memory cells;

read, erase, program and verify control logic for the array, including program verify resources; and

a status register, coupled with the control logic, to store defect statistics which characterize defects determined during verify operations concerning a program operation in which a plurality of bytes were programmed to the array, including defect statistics indicating whether a threshold number of sequential bytes fail program verify, and logic coupled with the status register which overwrites the defect statistics of a previous program operation.

57. The memory device of claim 56, wherein the control logic includes circuitry which retries program operations for bits in the plurality of bytes which fail program verify, until a maximum retry count is reached.

58. The memory device of claim 56, including a first buffer which receives input data, and a second buffer coupled to the first buffer and to the array, and wherein the control logic executes a program operation which transfers data from the first buffer to the second buffer, and programs data in the second buffer to the array in parallel.

59. The memory device of claim 56, wherein the stored defect statistics include an address of a byte which fails verify.

60. The memory device of claim 56, wherein the control logic includes erase verify resources, and the stored defect statistics indicate a number of bytes including bits stored in memory cells which fail erase verify.

61. The memory device of claim 60, wherein the stored defect statistics include an address of a byte which fails erase verify.

62. The memory device of claim 56, wherein the control logic includes program verify resources, and the stored defect statistics indicate a number of bytes including bits programmed to memory cells which fail program verify.

63. The memory device of claim 62, wherein the stored defect statistics include an address of a byte including a bit programmed to a memory cell which fails program verify.

64. The memory of claim 56, wherein the status register comprises a static random access memory.

65. The memory of claim 56, wherein the status register includes a first field which stores information concerning memory configuration including an indication whether a defect was detected in a preceding erase or program verify operation, and a second field which stores a count of defects detected in the preceding erase or program verify operation.

66. The memory of claim 65, wherein the status register includes a third field which stores an address of a byte including one of a bit programmed to a memory cell and a bit stored in a memory cell which fails verify.

76. The memory device of claim 56, including logic responsive to a command to clear at least a portion of the defect statistics in the status register.

67. A non-volatile memory device, comprising:

an array of floating gate memory cells, and the array including a first section and a second section; and

read, erase, program and verify control logic for the array, including program verify resources, and the control logic including circuitry which retries program operations for bits in a byte programmed to the first section of the array which fail program verify until a first maximum retry count is reached, and which retries program operations for bits in a byte programmed to the second section of the array which fail program verify until a second maximum retry count is reached, and the first maximum retry count being greater than the second maximum retry count.

68. The memory device of claim 67, wherein the first section stores header information concerning data in the second section.

69. The memory device of claim 67, including a first buffer which receives input data, and a second buffer coupled to the first buffer and to the array, and wherein the control logic executes a program operation which transfers data from the first buffer to the second buffer, and programs data in the second buffer to the array in parallel.

70. A method for storing data on an integrated circuit having an array of floating gate memory cells, comprising:

programming a segment of data to the array, the segment including a plurality of bytes of data;

executing a verify operation for the segment;

determining during the verify operation defect statistics characterizing defects in the programmed segment;

storing the defect statistics on the integrated circuit;

reading the defect statistics from the integrated circuit after the program operation; and

overwriting the defect statistics on the integrated circuit.

71. The method of claim 70, including storing an address of a byte including a bit programmed to a memory cell which fails verify, and including reprogramming the byte indicated in another location.

72. The method of claim 70, wherein the step of storing the defect statistics includes providing a first field which stores information including an indication whether a defect was detected in the verify operation, and a second field which stores a count of defects detected in the verify operation, and the step of reading includes reading the first field to determine whether a defect was detected, and reading the second field if a defect was detected.

73. The method of claim 72, including providing a third field which stores an address of a byte including a bit programmed to a memory cell which fails verify, and including reprogramming the byte indicated in another location.

74. The method of claim 70, wherein the step of programming includes programming a page of data in parallel, a page including more than four bytes.

75. The method of claim 70, wherein the step of storing defect statistics includes providing a first field which stores a count of defects detected in the verify operation, and a second field which stores an address of a byte including one of a bit stored in a memory cell and a bit programmed to a memory cell which fails verify, and wherein the step of reading includes reading the first field to determine whether a defect was detected, and reading the second field if defect was detected.