Sensors for use in high vibrational applications and methods for fabricating same

• US 5,955,771 A
• Filed: 11/12/1997
• Issued: 09/21/1999
• Est. Priority Date: 11/12/1997
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Ned, Alexander A.
• Primary Examiner(s): Monin, Jr., Donald L.
• Application Number:
  US08/968,218
• Time in Patent Office: 678 Days
• Field of Search: 257/415, 257/417, 257/418, 257/419, 257/684, 257/710, 273/514.29, 273/514.32, 438/456, 65/36, 65/155
• US Class Current: 257/419
• CPC Class Codes: G01L 19/0084 to the outside of the housing other details about the housing see G01L19/14
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means

Abstract

A hermetically sealed sensor device having a glass member defining a mounting surface and base surface, the glass member including one or more pin apertures extending through the glass member from the mounting surface to the base surface. A metallic pin is disposed in each of the pin apertures, each pin having a portion extending above the mounting surface. The sensor device also includes a semiconductor sensor chip including a semiconductor device and a cover hermetically bonded and sealed to a surface of the semiconductor device, the cover protecting the semiconductor device from the external environment. The is chip hermetically bonded and sealed to the mounting surface of glass member. The semiconductor device has one or more contacts disposed on the surface thereof, for making electrical contact thereto, the cover having one or more contact apertures extending therethrough which exposes a portion of the contacts. The portion of each pin extending above the mounting surface is received within the contact apertures and a conductive glass frit mixture disposed in the contact apertures, hermetically seals the contact apertures and provides electrical continuity between the pins and the contacts.

Claims

1. A semiconductor sensor device comprising:

a semiconductor diaphragm member having a top surface coated with an oxide layer;

P+ sensor elements fusion bonded to said oxide layer at a relatively central area of said diaphragm;

P+ finger elements fusion bonded to said oxide layer extending from said sensors to an outer contact location of said diaphragm for each finger;

an external rim of P+ material fusion bonded to said oxide layer and surrounding said sensors and fingers;

a glass cover member electrostatically bonded to said fingers and rim to hermetically seal said sensors and fingers of said diaphragm member, said glass cover having a depression above said sensors and having a plurality of apertures, each aperture associated with a separate finger at said contact location wherein each contact location can be accessed via said associated aperture in said glass cover member.

2. The sensor device according to claim 1, further including a non-fired conductive glass frit mixture having gold particles located in said aperture in contact with said contact location.

3. The sensor device according to claim 2, further comprising a shell member disposed about said glass member containing a group of hermetically sealed pins for coupling to said semiconductor sensor chip.

4. The sensor device according to claim 2, wherein said shell member is hermetically bonded and sealed to said glass member with a glass-to-metal seal.

5. The sensor device according to claim 2, wherein the sensor device in claim 2 is attached to the shell glass member by coating the surface of the glass portion of the shell glass member with a thin layer of a glass frit such as pyroceram and inserting the pins of shell-glass member into the unfired glass-metal frit and firing the structure so as to seal the sensor to the shell glass-structure and affix the pins of this structure to the sensor structure.

6. The sensor device according to claim 2, wherein said sensor comprises a semiconductor pressure transducer.

7. The sensor device according to claim 5, wherein said semiconductor pressure transducer includes a diaphragm made from semiconductor material which flexes in response to an applied force, said diaphragm having at least one sensor element disposed on said surface for gaging the flexing of said diaphragm, said at least one contact coupled to said at least one sensor element for enabling an electrical connection to be made to said at least one sensor element.

8. The sensor device according to claim 6, wherein a dielectric layer is disposed between said diaphragm and said at least one sensor element for electrically isolating said at least one sensor element from said diaphragm.

9. The sensor device according to claim 7, wherein said at least one sensor element comprises at least one piezoresistive sensor element.

10. The sensor device according to claim 8, wherein said at least one sensor element comprises four sensor elements, said at least one contact comprises four contacts, said at least one cover aperture comprises four cover apertures, and said at least one pin aperture comprises four pin apertures.

13. The method according to claim 10, wherein including the step of depositing a conductive glass frit mixture in said aperture.

14. The method according to claim 10, wherein said semiconductor sensor chip includes providing a semiconductor sensor chip having semiconductor device which comprises a semiconductor pressure transducer.

15. The method according to claim 13, wherein said semiconductor pressure transducer includes a diaphragm made from semiconductor material which flexes in response to an applied force, said diaphragm having at least one sensor element disposed on said surface for gaging the flexing of said diaphragm, said at least one contact coupled to said at least one sensor element for enabling an electrical connection to be made to said at least one sensor element.

16. The method according to claim 14, wherein a dielectric layer is disposed between said diaphragm and said at least one sensor element for electrically isolating said at least one sensor element from said diaphragm.

17. The method according to claim 15, wherein said at least one sensor element comprises at least one piezoresistive sensor element.

18. The method according to claim 13, wherein said conductive glass frit indicates gold particles.

19. The method according to claim 13, wherein said glass is Pyroceram.

11. A method in which a semiconductor sensor device is made by which coating a semiconductor diaphragm with an oxide layer;

fusion bonding P+ sensor elements to said oxide layer at a relatively central area of said diaphragm;

fusion bonding P+ finger elements to said oxide layer extending from said sensors to an outer contact location outside of the active portion of said diaphragm for each finger;

fusion bonding an external rim of P+ material to said oxide layer and surrounding said sensors and said fingers;

electrostatically bonding a glass cover to said fingers and said rim to hermetically seal said sensors and said fingers of said diaphragm member, said glass member made with a depression above said sensors and having a plurality of apertures associated with each finger but the apertures made smaller than the width of such fingers and being with the length of said fingers wherever each aperture associated with a separate finger at said contact location can be accessed via said associated aperture in said glass member.

12. The method according the claim 11, further comprising the step of inserting glass member into a shell member, wherein said shell glass member contains pins and sealing said pins to said glass member with the tips of said pins extending 2 to 5 mils above the glass member, coating said glass member with an unfired coating of a non-conductive glass frit such as pyroceram, placing said sensor on said glass member such that the pins of said glass member extend into the unfired glass-metal frit, and firing said composite structure to cure the pyroceram bonding the sensor to said glass member as well as firing the glass metal frit.

20. The method according to claim 11, wherein said glass cover hereby is fabricated from Pyrex.