White-light emitting electroluminescent display device and manufacturing method thereof

• US 5,955,835 A
• Filed: 12/12/1996
• Issued: 09/21/1999
• Est. Priority Date: 01/20/1995
• Status: Expired due to Fees

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: Sunwoo, Jin Ho, Hahn, Task Sang, Ju, Young Dae, Lee, Yun Hi, Oh, Myung Hwan, Jeung, Seong Jae
• Primary Examiner(s): Patel, Ashok
• Application Number:
  US08/764,792
• Time in Patent Office: 1,013 Days
• Field of Search: 313/506, 313/509, 313/503, 315/169.3, 252/301.4 S, 252/301.4 H
• US Class Current: 313/503
• CPC Class Codes: C09K 11/7702 with zinc or cadmium
• CPC Class Codes: H05B 33/14 characterised by the chemical or physical composition or the arrangement of the electroluminescent material , or by the simultaneous addition of the electroluminescent material in or onto the light source
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• CPC Class Codes: Y02B 20/00 Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

An improved white-light emitting electroluminescent display device and a manufacturing method thereof capable of advantageously generating a light having a red, blue, and green wave lengths within a unique material, which includes a substrate; a lower electrode disposed on the substrate; a first dielectric layer disposed on the lower electrode; a ZnS:Pr,Mn light-emitting layer disposed on the first dielectric layer; a second dielectric layer; and an upper electrode disposed on the second dielectric layer. In addition, a fabrication method thereof includes the steps of forming a first dielectric layer on an upper electrode; forming a light-emitting layer on the first dielectric layer by depositing a ZnS:Pr,Mn luminescent material made of Pr of 1.4˜0.5 mol % and Mn of 0.1˜0.01 mol % on a ZnS host material; forming a second dielectric layer on the light-emitting layer; and forming a lower electrode on the second dielectric layer.

Claims

1. A white-light emitting electroluminescent display device, comprising:

a substrate;

a first electrode disposed on said substrate;

a first dielectric layer disposed on said first electrode;

a light-emitting layer disposed on said first dielectric layer;

a second dielectric layer disposed on said light-emitting layer; and

a second electrode disposed on said second dielectric layer, wherein said light-emitting layer consists essentially of ZnS;

Pr,Mn.

2. The device of claim 1, wherein said ZnS:

Pr,Mn light-emitting layer is made of Pr in an amount of 1.4˜

0.5 mol % and Mn in an amount of 0.1˜

0.01 mol %.

3. The device of claim 1, wherein said Zns:

Pr,Mn light-emitting layer has a thickness range of 300˜

600 nm.

4. The device of claim 1, wherein said second dielectric layer has a passivation layer additionally disposed thereon.

5. A white-light emitting electroluminescent display device, comprising:

a substrate;

a first electrode disposed on said substrate;

first dielectric layers formed on said first electrode by disposing a BaTiO₃ layer and a Si₃ N₄ layer alternately thereon;

a light-emitting layer formed on said first dielectric layers;

second dielectric layers formed on said light-emitting layer by disposing a Si₃ N₄ layer and a BaTiO₃ layer alternately thereon; and

a second electrode formed on said second dielectric layers.

6. The device of claim 5, wherein said BaTiO₃ is an amorphous BaTiO₃.

7. The device of claim 5, wherein said BaTiO₃ has a thickness range of 200˜

350 nm.

8. The device of claim 5, wherein said Si₃ N₄ has a thickness range of 70˜

100 nm.

9. A white-light emitting electroluminescent display device, comprising:

a substrate;

a first electrode disposed on said substrate;

first dielectric layers formed on said first electrode by disposing a BaTiO₃ layer and a Si₃ N₄ layer alternately thereon;

a light-emitting layer comprising ZnS as a host material disposed on said first dielectric layers;

second dielectric layers formed on said light-emitting layer by disposing a Si₃ N₄ layer and a BaTiO₃ layer alternately thereon; and

a second electrode formed on said second dielectric layers.

10. The device of claim 9, wherein said BaTiO₃ is an amorphous BaTiO₃.

11. The device of claim 9, wherein said light-emitting layer is ZnS:

Pr,Mn light-emitting layer.

12. The device of claim 9, wherein said second dielectric layers have a passivation layer additionally disposed thereon.