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Semiconductor device having power semiconductor elements

  • US 5,956,231 A
  • Filed: 10/04/1995
  • Issued: 09/21/1999
  • Est. Priority Date: 10/07/1994
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a heat dissipating base;

    an insulator substrate having a plurality of electrode patterns on a main surface of said insulator substrate, wherein another surface of said insulator substrate is joined to said heat dissipating base;

    a plurality of semiconductor elements mounted on said main surface of said insulator substrate, said semiconductor elements having electrodes connected to said electrode patterns;

    a member which seals said semiconductor elements from an outer environment, said member covering an upper surface of said heat dissipating base; and

    terminals which electrically connect said electrode patterns on said main surface of said insulator substrate to external electrodes provided outside said member,wherein material forming said heat dissipating base has a linear expansion coefficient which is larger than a linear expansion coefficient of said semiconductor elements, and is smaller than a value three times the linear expansion coefficient of said semiconductor elements, and wherein said material has a thermal conductivity larger than 100 W/mK, andwherein said plurality of semiconductor elements are distributed and mounted on a surface of at least one of said electrode patterns, said surface of said at least one of said electrode patterns being divided into at least two regions which are electrically connected to each other, and said semiconductor elements are connected electrically in parallel to each other on each electrode pattern.

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