Semiconductor device having power semiconductor elements
First Claim
1. A semiconductor device comprising:
- a heat dissipating base;
an insulator substrate having a plurality of electrode patterns on a main surface of said insulator substrate, wherein another surface of said insulator substrate is joined to said heat dissipating base;
a plurality of semiconductor elements mounted on said main surface of said insulator substrate, said semiconductor elements having electrodes connected to said electrode patterns;
a member which seals said semiconductor elements from an outer environment, said member covering an upper surface of said heat dissipating base; and
terminals which electrically connect said electrode patterns on said main surface of said insulator substrate to external electrodes provided outside said member,wherein material forming said heat dissipating base has a linear expansion coefficient which is larger than a linear expansion coefficient of said semiconductor elements, and is smaller than a value three times the linear expansion coefficient of said semiconductor elements, and wherein said material has a thermal conductivity larger than 100 W/mK, andwherein said plurality of semiconductor elements are distributed and mounted on a surface of at least one of said electrode patterns, said surface of said at least one of said electrode patterns being divided into at least two regions which are electrically connected to each other, and said semiconductor elements are connected electrically in parallel to each other on each electrode pattern.
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Accused Products
Abstract
A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
84 Citations
20 Claims
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1. A semiconductor device comprising:
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a heat dissipating base; an insulator substrate having a plurality of electrode patterns on a main surface of said insulator substrate, wherein another surface of said insulator substrate is joined to said heat dissipating base; a plurality of semiconductor elements mounted on said main surface of said insulator substrate, said semiconductor elements having electrodes connected to said electrode patterns; a member which seals said semiconductor elements from an outer environment, said member covering an upper surface of said heat dissipating base; and terminals which electrically connect said electrode patterns on said main surface of said insulator substrate to external electrodes provided outside said member, wherein material forming said heat dissipating base has a linear expansion coefficient which is larger than a linear expansion coefficient of said semiconductor elements, and is smaller than a value three times the linear expansion coefficient of said semiconductor elements, and wherein said material has a thermal conductivity larger than 100 W/mK, and wherein said plurality of semiconductor elements are distributed and mounted on a surface of at least one of said electrode patterns, said surface of said at least one of said electrode patterns being divided into at least two regions which are electrically connected to each other, and said semiconductor elements are connected electrically in parallel to each other on each electrode pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification