Analysis apparatus and analysis methods for semiconductor devices
First Claim
1. An analysis method for semiconductor devices, comprising the steps of:
- removing a protective film from a semiconductor device by dry etching;
inclining said semiconductor device to an angle in the range of about 15-30 degrees;
rotating said inclined semiconductor device;
scanning an aluminum containing film of said inclined and rotating semiconductor device with a focused ion beam; and
scanning said aluminum film with a cantilever, measuring atomic force between said aluminum film and the cantilever, and observing the surface of said aluminum film in vacuum.
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Accused Products
Abstract
This invention aims to facilitate observation and structural analysis of crystal grains of aluminum wiring. In the process, a protective film of a semiconductor device is removed by dry etching. Next, said semiconductor device is inclined and rotated and an aluminum alloy film or laminated aluminum alloy film of the semiconductor device is scanned with a focused ion beam. Then, said aluminum alloy film or laminated aluminum alloy film is scanned with a cantilever, atomic force between said aluminum alloy film or laminated aluminum alloy film and the cantilever is measured, and the surface of said aluminum alloy film or laminated aluminum alloy film is observed in vacuum.
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Citations
11 Claims
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1. An analysis method for semiconductor devices, comprising the steps of:
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removing a protective film from a semiconductor device by dry etching; inclining said semiconductor device to an angle in the range of about 15-30 degrees; rotating said inclined semiconductor device; scanning an aluminum containing film of said inclined and rotating semiconductor device with a focused ion beam; and scanning said aluminum film with a cantilever, measuring atomic force between said aluminum film and the cantilever, and observing the surface of said aluminum film in vacuum. - View Dependent Claims (4, 7, 8)
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2. An analysis method for semiconductor devices, comprising the steps of:
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cleaving a semiconductor device; inclining said semiconductor device to an angle in the range of about 15-30 degrees; rotating said inclined semiconductor device; etching the cleaved local areas of said inclined and rotating device by scanning the areas with a focused ion beam; and scanning the local areas of said semiconductor device with a cantilever, measuring atomic force between said semiconductor device and the cantilever, and observing the surface of an aluminum containing film of said semiconductor device in vacuum. - View Dependent Claims (3, 5, 6, 9, 10, 11)
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Specification