Method of fabricating vertical FET with Schottky diode
First Claim
1. A method of fabricating an integrated vertical field effect transistor and Schottky diode comprising the steps of:
- providing a substrate having a first surface and an opposed second surface;
forming a source region on the first surface of the substrate so as to define a channel therebelow;
forming first and second spaced apart gates on opposing sides of the source region so as to abut the channel thereby forming a channel structure;
positioning Schottky metal on the first surface of the substrate proximate the channel structure to define a Schottky diode region and form a Schottky diode;
forming a source contact in communication with the source region and the Schottky metal; and
forming a drain contact on the second surface of the substrate.
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Accused Products
Abstract
A method of fabricating an integrated VFET and Schottky diode including forming a source region on the upper surface of a substrate so as to define a channel. First and second spaced apart gates are formed on opposing sides of the source region so as to abut the channel, thereby forming a channel structure. Schottky metal is positioned on the upper surface of the substrate proximate the channel structure to define a Schottky diode region and form a Schottky diode. A source contact is formed in communication with the source region and the Schottky metal, and a drain contact is formed on the lower surface of the substrate.
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Citations
16 Claims
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1. A method of fabricating an integrated vertical field effect transistor and Schottky diode comprising the steps of:
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providing a substrate having a first surface and an opposed second surface; forming a source region on the first surface of the substrate so as to define a channel therebelow; forming first and second spaced apart gates on opposing sides of the source region so as to abut the channel thereby forming a channel structure; positioning Schottky metal on the first surface of the substrate proximate the channel structure to define a Schottky diode region and form a Schottky diode; forming a source contact in communication with the source region and the Schottky metal; and forming a drain contact on the second surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating an integrated vertical field effect transistor and Schottky diode comprising the steps of:
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providing a substrate having a first surface and an opposed second surface selected from a group including GaAs, SiC, GaN and InP; implanting a source species to form a source region in the first surface of the substrate so as to define a channel therebelow; forming first and second spaced apart gates on opposing sides of the source region so as to abut the channel thereby forming a channel structure; positioning Schottky metal on the first surface of the substrate proximate the channel structure to define a Schottky diode region and form a Schottky diode; forming a source contact in communication with the source region and the Schottky metal; and forming a drain contact on the second surface of the substrate. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of fabricating a plurality of integrated vertical field effect transistors and a Schottky diode comprising the steps of:
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providing a substrate having a first surface and an opposed second surface; forming a plurality of spaced apart source regions on the first surface of the substrate, each source region defining a channel therebelow; forming a plurality of spaced apart gates, each source region having a gate on opposing sides of the source region so as to abut the channel; positioning Schottky metal on the first surface of the substrate to define a Schottky diode; forming a source contact in communication with the source region and the Schottky metal; and forming a drain contact on the second surface of the substrate. - View Dependent Claims (14, 15, 16)
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Specification