Apparatus for optical inspection of wafers during polishing

• US 5,957,749 A
• Filed: 03/25/1998
• Issued: 09/28/1999
• Est. Priority Date: 05/23/1995
• Status: Expired due to Term

• Current Assignee: Nova Measuring Instruments Limited (Honeywell International Inc.)
• Original Assignee: Nova Measuring Instruments Limited (Honeywell International Inc.)
• Inventors: Finarov, Moshe
• Primary Examiner(s): Morgan, Eileen P.
• Application Number:
  US09/047,944
• Time in Patent Office: 552 Days
• Field of Search: 451/41, 451/6, 451/8, 451/9, 451/63, 451/285, 451/287, 451/288, 156/626, 156/636.1
• US Class Current: 451/6
• CPC Class Codes: B24B 37/005 Control means for lapping machines or devices
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafer'"'"'s top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Claims

1. A wafer polishing apparatus comprising:

a polishing unit for polishing a top layer of a wafer in the presence of a liquid;

an optical measurement station in communication with said polishing unit; and

means for moving said wafer from said polishing unit to said optical measurement station, while said wafer is still wet;

said optical measurement station comprising;

a liquid holding unit for receiving said wafer, said liquid holding unit having a bottom surface, and at least a portion of said bottom surface formed by a window, through which at least a portion of said top layer of said wafer is viewable; and

an optical thickness measuring unit in operative communication with said liquid holding unit, said optical thickness measuring unit for measuring the thickness of said top layer of said wafer through said window while said wafer is in said liquid holding unit.

2. The apparatus according to claim 1 and having a layer of liquid between said window and said wafer during operation of said optical thickness measuring unit.

3. The apparatus according to claim 1, wherein said optical thickness measuring unit comprises:

an illumination optical unit for directing light towards said wafer;

an imaging unit for imaging at least said top layer of said wafer;

a spectrophotometric detector; and

an optical assembly in operative communication with said imaging unit and said spectrophotometric detector for providing light reflected from said wafer separately to said imaging unit and to said spectrophotometric detector, said optical assembly comprising, an objective lens, a pinhole mirror and first and second relay lenses, wherein said first relay lens focuses the light passing through said pinhole mirror onto said spectrophotometric detector and wherein said second relay lens focuses the light reflected from said pinhole mirror onto said imaging unit.