Process to form light-receiving member with outer layer made by alternately forming and etching

• US 5,958,644 A
• Filed: 04/24/1996
• Issued: 09/28/1999
• Est. Priority Date: 04/26/1995
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Aoki, Makoto, Ueda, Shigenori, Hashizume, Junichiro, Tsuchida, Shinji
• Primary Examiner(s): Nuzzolillo, Maria
• Assistant Examiner(s): WEINER, LAURA S
• Application Number:
  US08/637,188
• Time in Patent Office: 1,252 Days
• Field of Search: 430/57, 430/127, 430/67, 430/128
• US Class Current: 430/128
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: G03G 5/08235 comprising three or four silicon-based layers
• CPC Class Codes: G03G 5/08264 comprising seven or more silicon-based layers
• CPC Class Codes: G03G 5/08278 Depositing methods

Abstract

In a reactor capable of reducing an internal pressure thereof, a non-single-crystalline material layer containing at least one kind of carbon atoms, hydrogen atoms or nitrogen atoms is formed and etched on a non-single-crystalline photoconductive layer mainly composed of silicon atoms, formed on a substrate, under application of a high-frequency power of 50 MHz to 450 MHz, and the formation and the etching are alternately repeated plural times to form a surface layer.

A light-receiving member having such a surface layer does not damage cleaning performance over a long period of time, hardly allows adhesion of corona discharge products, and can be free from faint images, smeared images and uneven image density even if no heating means for the drum is provided.

Claims

1. A process for producing a light-receiving member which comprises the steps of:

(a) forming an outer layer on the surface of a light-receiving layer, said light-receiving layer supported by a substrate, said outer layer comprising a non-single-crystalline material containing silicon atoms and at least one kind of carbon atoms, oxygen atoms or nitrogen atoms;

(b) etching the surface of the outer layer so as to remove a portion of the outer layer;

(c) forming a second outer layer of a non-single crystalline material containing silicon atoms and at least one kind of carbon atoms, oxygen atoms or nitrogen atoms on the surface of the remaining outer layer after the step (b) is conducted; and

(d) etching the surface of the second outer layer formed in the step (c), to form a surface layer on the light-receiving layer.

2. The process for producing a light-receiving member according to claim 1, wherein the etching is carried out by using a gas comprising fluorine.

3. The process for producing a light-receiving member according to claim 2, wherein the gas comprising fluorine contains at least one of CF₄, CHF₃, C₂ F₆ or ClF₃.

4. The process for producing a light-receiving member according to claim 1, wherein the surface layer is formed by utilizing a frequency of 50 MHz to 450 MHz.

5. The process for producing a light-receiving member according to claim 1, wherein the surface layer further contains hydrogen atoms.

6. The process for producing a light-receiving member according to claim 1, wherein thickness of the outer layer etched in the step (b) or (d) is at least 20 Å

.

7. The process for producing a light-receiving member according to claim 1, wherein thickness of the outer layer etched in the step (b) or (d) is at least 50 Å

.

8. The process for producing a light-receiving member according to claim 1, wherein thickness of the outer layer formed in the step (a) or (c) 30 Å

to 2,500 Å

.

9. The process for producing a light-receiving member according to claim 1, wherein thickness of the outer layer formed in the step (a) or (c) is 60 Å

to 1,000 Å

.

10. The process for producing a light-receiving member according to claim 1, wherein thickness of the surface layer to be formed is 10 Å

to 2,000 Å

.

11. The process for producing a light-receiving member according to claim 1, wherein thickness of the surface layer to be formed is 40 Å

to 1,000 Å

.

12. The process for producing a light-receiving member according to claim 1, wherein the formation of the outer layer in the steps (a) and (c) and the etching of the outer layer in the steps (b) and (d) result in formation of a surface layer region containing bonded fluorine atoms in the surface layer.

13. The process for producing a light-receiving member according to claim 12, wherein the region has a thickness of from 1 Å

to 500 Å

.

14. The process for producing a light-receiving member according to claim 1, wherein the light-receiving layer is photoconductive.

15. The process for producing a light-receiving member according to claim 1, wherein the light-receiving layer comprises a photoconductive layer.

16. The process for producing a light-receiving member according to claim 15, wherein the photoconductive layer is a single layer.

17. The process for producing a light-receiving member according to claim 15, wherein the photoconductive layer is functionally separated into a charge generating layer and a charge transporting layer.

18. The process for producing a light-receiving member according to claim 1, wherein a charge injection blocking layer is interposed between the substrate and the light-receiving layer.

19. The process for producing a light-receiving member according to claim 1, wherein the light-receiving layer comprises a matrix of a non-single-crystalline material comprising silicon atoms.

20. The process for producing a light-receiving member according to claim 1, wherein the outer layer of the non-single-crystalline material formed in the step (a) or (c) comprises an amorphous material.

21. The process for producing a light-receiving member according to claim 1, wherein the etching in the step (b) or (d) is carried out by utilizing a frequency of 50 MHz to 450 MHz.

22. The process for producing a light-receiving member according to claim 1, wherein the formation of the outer layer in the step (a) or (c) and the etching in the step (b) or (d) are carried out by utilizing a frequency of 50 MHz to 450 MHz.

23. The process for producing a light-receiving member according to claim 1, wherein the light-receiving layer is formed by utilizing a frequency of 1 MHz to 450 MHz.

24. The process for producing a light-receiving member according to claim 1, wherein the content of the at least one kind of carbon atoms, oxygen atoms or nitrogen atoms in the surface layer increases toward the exposed surface.

25. The process for producing a light-receiving member according to claim 1, wherein after step (d) is conducted, the steps (b), (c) and (d) are repeated to etch the surface layer, to form an additional outer layer and to etch the surface of the additional outer layer to form a second surface layer.

26. The process for producing a light-receiving member according to claim 1, wherein the surface layer further contains hydrogen atoms.

27. A process for producing a light-receiving member which comprises the steps of:

(a) forming an outer layer on the surface of a light-receiving layer, said light-receiving layer supported by a substrate, said outer layer comprising a non-single-crystalline material comprising carbon atoms;

(b) etching the surface of the outer layer so as to remove a portion of the outer layer;

(c) forming a second outer layer of a non-single-crystalline material containing carbon atoms on the surface of the remaining outer surface after the step (b) is conducted; and

(d) etching the surface of the second outer layer formed in the step (c), to form a surface layer on the light-receiving layer.

28. The process for producing a light-receiving member according to claim 27, wherein the light-receiving layer comprises a matrix of a non-single-crystalline material comprising silicon atoms.

29. The process for producing a light-receiving member according to claim 27, wherein the thickness of the outer layer etched in the step (b) or (d) is at least 20 Å

.

30. The process for producing a light-receiving member according to claim 27, wherein the thickness of the outer layer etched in the step (b) or (d) is at least 50 Å

.

31. The process for producing a light-receiving member according to claim 27, wherein the thickness of the outer layer formed in the step (a) or (c) is 30 Å

to 2,500 Å

.

32. The process for producing a light-receiving member according to claim 27, wherein the thickness of the outer layer formed in the step (a) or (c) is 60 Å

to 1,000 Å

.

33. The process for producing a light-receiving member according to claim 27, wherein the thickness of the surface layer to be formed is 10 Å

to 2,000 Å

.

34. The process for producing a light-receiving member according to claim 27, wherein the thickness of the surface layer to be formed is 40 Å

to 1,000 Å

.

35. The process for producing a light-receiving member according to claim 27, wherein the formation of the outer layer in the steps (a) and (c) and the etching of the outer layer in the steps (b) and (d) result in formation of a surface layer region containing bonded fluorine atoms in the surface layer.

36. The process for producing a light-receiving member according to claim 35, wherein the region has a thickness of from 1 Å

to 500 Å

.

37. The process for producing a light-receiving member according to claim 27, wherein the light-receiving layer is photoconductive.

38. The process for producing a light-receiving member according to claim 27, wherein the light-receiving layer comprises a photoconductive layer.

39. The process for producing a light-receiving member according to claim 38, wherein the photoconductive layer is a single layer.

40. The process for producing a light-receiving member according to claim 38, wherein the photoconductive layer is functionally separated into a charge generating layer and a charge transporting layer.

41. The process for producing a light-receiving member according to claim 38, wherein the photoconductive layer comprises a charge transport layer and a charge generation layer.

42. The process for producing a light-receiving member according to claim 27, wherein a charge injection blocking layer is interposed between the substrate and the light-receiving layer.

43. The process for producing a light-receiving member according to claim 27, wherein the outer layer of the non-single-crystalline material formed in the step (a) or (c) comprises an amorphous material.

44. The process for producing a light-receiving member according to claim 27, wherein the surface layer is formed by utilizing a frequency of 50 MHz to 450 MHz.

45. The process for producing a light-receiving member according to claim 27, wherein the etching in the step (b) or (d) is carried out by utilizing a frequency of 50 MHz to 450 MHz.

46. The process for producing a light-receiving member according to claim 27, wherein the formation of the outer layer in the step (a) or (c) and the etching in the step (b) or (d) are carried out by utilizing a frequency of 50 MHz to 450 MHz.

47. The process for producing a light-receiving member according to claim 27, wherein the light-receiving layer is formed by utilizing a frequency of 1 MHz to 450 MHz.

48. The process for producing a light-receiving member according to claim 27, wherein after step (d) is conducted the steps (b), (c) and (d) are repeated to etch the surface layer, to form an additional outer layer and to etch the surface of the additional outer layer to form a second surface layer.

49. The process for producing a light-receiving member according to claim 27, wherein the layer formed in the step (a) further contains silicon atoms.

50. The process for producing a light-receiving member according to claim 27, wherein the etching steps (b) and (d) are carried out by using a gas containing fluorine.

51. The process for producing a light-receiving member according to claim 50, wherein the gas containing fluorine includes at least one of CF₄, CHF₃, C₂ F₆ or ClF₃.

52. A process for producing a light-receiving member comprising the steps of:

(a) etching a light-receiving layer on a substrate to remove a portion of the light-receiving layer;

(b) forming on the surface of the light-receiving layer an outer layer, said outer layer comprising (i) a non-single crystalline material containing silicon atoms and at lease one kind of carbon atoms, oxygen atoms or nitrogen atoms or (ii) a non-single-crystalline material containing carbon atoms; and

(c) etching the surface of the outer layer so as to remove a portion of the outer layer to form a surface layer.

53. The process for producing a light-receiving member according to claim 52, wherein the etching is carried out by using a gas comprising fluorine.

54. The process for producing a light-receiving member according to claim 52, wherein after step (c) is conducted, conducting at least once the steps of etching the surface layer to remove a portion thereof;

forming a second outer layer having the substituents of the outer layer of step (b) and etching the surface of the second outer layer to form a second surface layer.

55. A process for producing a light-receiving member which comprises the steps of:

(a) forming an outer layer on the surface of a light-receiving layer, said light-receiving layer supported by a substrate, said outer layer comprising a non-single-crystalline material containing boron atoms and nitrogen atoms;

(b) etching the surface of the outer layer so as to remove a portion of the outer layer;

(c) forming a second outer layer of a non-single-crystalline material containing boron atoms and nitrogen atoms on the surface of the remaining outer surface after the step (b) is conducted; and

(d) etching the surface of the second outer layer formed in the step (c), to form a surface layer on the light-receiving layer.

56. The process for producing a light-receiving member according to claim 55, wherein the etching steps (b) and (d) are carried out by using a gas containing fluorine.

57. The process for producing a light-receiving member according to claim 56, wherein the gas containing fluorine includes at least one of CF₄, CHF₃, C₂ F₆ and ClF₃.

58. The process for producing a light-receiving member according to claim 55, wherein the thickness of the outer layer etched in the step (b) or (d) is at least 20 Å

.