Micromachined cantilever structure providing for independent multidimensional force sensing using high aspect ratio beams

• US 5,959,200 A
• Filed: 08/27/1997
• Issued: 09/28/1999
• Est. Priority Date: 08/27/1997
• Status: Expired due to Fees

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Original Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Inventors: Kenny, Thomas W., Chui, Benjamin W.
• Primary Examiner(s): Noori, Max H.
• Application Number:
  US08/924,427
• Time in Patent Office: 762 Days
• Field of Search: 73/105, 73/777, 73/812, 73/849, 73/514.34, 73/514.36, 73/514.38
• US Class Current: 73/105
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01Q 20/04 Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge
• CPC Class Codes: G01Q 70/10 Shape or taper

Abstract

A micromachined structure providing for independent vertical and lateral deflection sensing. The structure uses high aspect ratio ribs which bend much more easily in one direction than in other directions (i.e., have a predominant direction of compliance). One or more ribs are combined to form beams which also have one predominant direction of compliance. Two such beams are bonded end to end, and one end of the beam pair is bonded to a base. The beams are oriented orthogonally to one another such that they independently bend to vertical and lateral external forces. Further, three dimensional force sensing can be accomplished by adding a third beam. Sensors can independently sense the bending in each beam and thereby independently measure the dimensional components of bending forces applied to the free end of the structure. In the preferred embodiment, piezoresistive sensors are formed on the ribs comprising the beams. The piezoresistors can be made by ion-implantation, for example. Measurement of the change in resistance of the sensors is then a measure of the beam deflection and the external force. The resistances of the sensors can be measured independently. Other sensing means include voltage measurement of piezoelectric effects, optical deflection and interference sensing techniques, and capacitive deflection sensors.

Claims

1. A micromachined cantilever structure for deflection sensing comprising:

a) a base;

b) a beam portion having a fixed end and a free end, said fixed end being attached to said base, said beam portion comprising at least one X-deflecting high aspect ratio rib extending in a Y-direction and oriented planar parallel to a ZY plane such that the rib may laterally deflect in a X-direction;

c) a first lateral-sensing piezoresistor positioned in a side of said at least one high aspect ratio rib such that the resistance of said first lateral-sensing piezoresistor changes when said free end is deflected laterally; and

d) a first electrical circuit in said cantilever structure for sensing the change in resistance of said first lateral-sensing piezoresistor.

2. The cantilever structure of claim 1 further comprising:

a) a probe having a deflecting portion and being mounted on said free end;

b) a first vertical-sensing piezoresistor positioned in said probe such that the resistance of said first vertical-sensing piezoresistor changes when said deflecting portion is deflected vertically; and

c) a second electrical circuit in said cantilever structure for sensing the change in resistance of said first vertical-sensing piezoresistor.

3. The cantilever structure of claim 2 wherein said probe has a triangular structure comprising a base, a first leg and a second leg, said deflecting portion including said first leg and said second leg, said base being attached to said free end, said first vertical-sensing piezoresistor being positioned in said first leg, and said cantilever structure further comprising a second vertical-sensing piezoresistor positioned in said second leg such that said second electrical circuit senses the change in resistance of said second vertical-sensing piezoresistor.

4. The cantilever structure of claim 3 wherein said beam portion comprises at least two conducting ribs, and said second electrical circuit comprises said base, said at least two conducting ribs, said first leg and said second leg.

5. The cantilever structure of claim 2 wherein said first vertical-sensing piezoresistor is positioned in a section of said deflection probe experiencing mechanical stress when said deflecting portion is deflected vertically.

6. The cantilever structure of claim 2 further comprising a sensing tip mounted on said deflecting portion.

7. The cantilever structure of claim 2 wherein said first vertical-sensing piezoresistor is a lightly doped region of said probe.

8. The cantilever structure of claim 2 wherein said first vertical-sensing piezoresistor is an ion-implanted region of said probe.

9. The cantilever structure of claim 2 wherein said second electrical circuit comprises doped regions in said cantilever structure.

10. The cantilever structure of claim 2 wherein said second electrical circuit comprises ion-implanted regions in said cantilever structure.

11. The cantilever structure of claim 1 wherein said beam portion comprises a first high aspect ratio rib and a second high aspect ratio rib, and said first lateral-sensing piezoresistor is positioned in said first high aspect ratio rib, and said cantilever structure further comprises a second lateral-sensing piezoresistor positioned in said second high aspect ratio rib such that said first electrical circuit senses the change in resistance of said second lateral-sensing piezoresistor.

12. The cantilever structure of claim 11 further comprising a probe mounted on said free end, and wherein said beam portion comprises at least two conducting ribs and said first electrical circuit comprises said base, said at least two conducting ribs and said probe.

13. The cantilever structure of claim 1 wherein said first lateral-sensing piezoresistor is positioned in a section of said at least one high aspect ratio rib experiencing mechanical stress when said free end is deflected laterally.

14. The cantilever structure of claim 1 wherein said first lateral-sensing piezoresistor is a lightly doped region of said at least one rib.

15. The cantilever structure of claim 1 wherein said first lateral-sensing piezoresistor is an ion-implanted region of said at least one rib.

16. The cantilever structure of claim 1 wherein said first electrical circuit comprises doped regions in said cantilever structure.

17. The cantilever structure of claim 1 wherein said first electrical circuit comprises ion-implanted regions in said cantilever structure.

19. The cantilever structure of claim 2 further comprising at least one Y-deflection high aspect ratio rib disposed planar parallel with a ZX plane such that the rib may deflect in a Y-direction, thereby providing for three dimensional deflection sensing.

18. A micromachined cantilever structure for three dimensional deflection sensing comprising:

a) a base;

b) at least one X-deflecting high aspect ratio rib having a fixed end and a free end, the fixed end being attached to the base such that the rib extends in a Y-direction from the base, wherein the rib is disposed planar parallel with a ZY plane such that the rib may deflect in a X-direction, and wherein the rib has an aspect ratio of at least 2;

1;

c) a probe base attached to the free end of the rib;

d) a Y-deflecting high aspect ratio rib attached to the probe base, wherein the Y-deflecting rib is disposed planar parallel with a XZ plane such that the Y-deflecting rib may deflect in a Y-direction, and wherein the Y-deflecting rib has an aspect ratio of at least 2;

1;

d) a high aspect ratio probe attached to the Y-deflecting rib, the probe having a probe tip, wherein the probe is disposed planar parallel with a XY-plane such that the probe may deflect in a Z-direction;

whereby the X-deflecting rib deflects in the X-direction in response to a force applied in the X-direction to the probe tip, the Y-deflecting rib deflects in the Y-direction in response to a force applied in the Y-direction to the probe tip, and the probe deflects in the Z-direction in response to a force applied in the Z-direction to the probe tip.

32. The cantilever of claim 18 comprising six parallel X-deflecting ribs attached to the base and probe base.

33. The cantilever of claim 18 wherein the Y-deflecting rib comprises a first end and a second end, and wherein the Y-deflecting rib is attached to the probe base by the first end and the second end such that a middle portion of the Y-deflecting rib is free to bend in the Y-direction.

34. The cantilever of claim 33 wherein the probe is attached to the middle portion of the Y-deflecting rib.

35. The cantilever of claim 32 wherein two of the six ribs comprise lateral sensing piezoresistors.

20. A micromachined cantilever structure for multidirectional deflection sensing comprising:

a) a base;

b) a first high aspect ratio rib oriented planar parallel to a first plane such that it most easily bends in a first direction;

c) a second high aspect ratio rib oriented planar parallel to a second plane such that it most easily bends in a second direction, and

d) a sensing means for independently sensing bending in said first rib and bending in said second rib;

wherein;

1) said first direction and said second direction are perpendicular;

2) one end of said first rib is bonded to said base;

3) one end of said second rib is bonded to said first rib opposite said base such that said second rib has a free end opposite said first rib; and

4) said first plane and said second plane are perpendicular;

whereby said first rib and said second rib may bend in perpendicular directions in response to a force applied to said free end.

21. The micromachined cantilever structure of claim 20 wherein said sensing means is a piezoresistive means for sensing mechanical stress.

22. The micromachined cantilever structure of claim 20 wherein said sensing means is a piezoelectric means for sensing mechanical stress.

23. The micromachined cantilever structure of claim 20 wherein said sensing means is an optical-interference based means for sensing deflection.

24. The micromachined cantilever structure of claim 20 wherein said sensing means is an optical beam deflection based means for sensing deflection.

25. The micromachined cantilever structure of claim 20 further comprising a third rib oriented planar parallel to a third plane such that it most easily bends in a third direction, said third plane being perpendicular to said first plane and said second plane, and wherein said third direction is perpendicular to said first direction and said second direction, thereby providing said cantilever structure with three dimensional force sensing capability.

26. A micromachined cantilever structure for deflection sensing comprising:

a) a base;

b) at least one X-deflecting high aspect ratio rib having a fixed end and a free end, the fixed end being attached to the base such that the rib extends in a Y-direction from the base, wherein the rib is disposed planar parallel with a ZY plane such that the rib may deflect in a X-direction, and wherein the rib has an aspect ratio of at least 2;

1;

c) a probe base attached to the free end of the rib;

d) a high aspect ratio probe attached to the probe base, the probe having a probe tip, wherein the probe is disposed planar parallel with a XY-plane such that the probe may deflect in a Z-direction;

whereby the rib deflects in the X-direction in response to a force applied in the X-direction to the probe tip, and the probe deflects in the Z-direction in response to a force applied in the Z-direction to the probe tip.

27. The cantilever of claim 26 comprising four parallel X-deflecting high aspect ratio ribs attached to the base and probe base.

28. The cantilever of claim 27 wherein two of the four ribs each comprise a lateral deflection sensing piezoresistor.

29. The cantilever of claim 26 wherein the probe comprises a vertical deflection sensing piezoresistor.

30. The cantilever of claim 29 comprising four parallel X-deflecting high aspect ratio ribs attached between the base and the probe base, and wherein two of the four ribs are highly conductive and are in electrical communication with the vertical deflection sensing piezoresistor.

31. The cantilever of claim 26 wherein the X-deflecting high aspect ratio rib comprises a lateral deflection sensing piezoresistor.