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Light-emitting semiconductor device using group III nitride compound

  • US 5,959,401 A
  • Filed: 05/21/1997
  • Issued: 09/28/1999
  • Est. Priority Date: 05/21/1996
  • Status: Expired due to Term
First Claim
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1. A light-emitting device using group III nitride compound semiconductor, comprising:

  • an emission layer of group III nitride compound semiconductor satisfying the formula Alx1 Gay1 In1-x1-y1 N, inclusive of 0≦

    x1≦

    1, 0≦

    y1≦

    1 and 0≦

    x1+y1≦

    1;

    a cladding layer formed on said emission layer and made of group III nitride compound semiconductor satisfying the formula Alx2 Gay2 In1-x2-y2 N, inclusive of 0≦

    x2≦

    1, 0≦

    y2≦

    1 and 0≦

    x2+y2≦

    1;

    a contact layer formed on said cladding layer and made of group III nitride compound semiconductor satisfying the formula Alx3 Gay3 In1-x3-y3 N, inclusive of 0≦

    x3≦

    1, 0≦

    y3≦

    1 and 0≦

    x3+y3≦

    1; and

    wherein total thickness of said cladding layer and said contact layer is in the range of 10 nm to 150 nm.

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