Charge and discharge control circuit having low voltage detecting means for preventing charging of an abnormal cell

• US 5,959,436 A
• Filed: 02/03/1998
• Issued: 09/28/1999
• Est. Priority Date: 02/04/1997
• Status: Expired due to Term

• Current Assignee: SII Semiconductor Corporation (MinebeaMitsumi Inc.)
• Original Assignee: Seiko Instruments Incorporated (Seiko Group)
• Inventors: Yoshida, Shinichi, Takashina, Takayuki, Mukainakano, Hiroshi
• Primary Examiner(s): Tso, Edward H.
• Application Number:
  US09/018,073
• Time in Patent Office: 602 Days
• Field of Search: 320/121, 320/123, 320/127, 320/134, 320/136, 320/158, 320/FOR 112, 320/FOR 113, 320/FOR 138, 320/FOR 147, 324/426, 324/433, 340/636, 429/61
• US Class Current: 320/134
• CPC Class Codes: G01R 19/16542 for batteries charge condition monitoring in G01R31/36

Abstract

A charge/discharge control circuit cuts off a current path to stop charging of an abnormal secondary cell when the voltage of the secondary cell is less than the threshold voltage of a MOS transistor. The charge/discharge control circuit includes a charge and discharge control circuit for monitoring the voltage of a secondary cell and outputting a signal for controlling the charging and discharging of the secondary cell, a switch circuit for receiving the output signal of the charge and discharge control circuit to stop the charging of the secondary cell in an overcharged or overdischarged state, and a low voltage detecting circuit for receiving the output signal of the charge and discharge control circuit, detecting whether the voltage of the secondary cell is below a predetermined voltage, which is below the overdischarge voltage and which is equal to the threshold voltage of a MOS transistor, and for controlling the switch circuit to prevent charging of the secondary cell if the voltage thereof is below the predetermined voltage.

Claims

1. A charge and discharge control circuit comprising:

circuitry for monitoring whether the voltage of at least one secondary cell is above or below the threshold voltage of a MOS transistor and outputting a signal depending upon the monitored voltage for controlling the charging of the at least one secondary cell based upon the signal.

2. A charge and discharge control circuit according to claim 1;

wherein the circuitry includes means for preventing charging of the at least one secondary cell when the voltage of the at least one secondary cell is less than the threshold voltage of the MOS transistor.

3. A charge and discharge control circuit according to claim 1;

wherein the circuitry includes one of a pull-up or pull-down element at a signal output terminal.

4. A charge and discharge control circuit comprising:

a charge and discharge control circuit for monitoring the voltage of at least one secondary cell and outputting a signal used for controlling the charge and discharge of the at least one secondary cell;

a switch circuit for receiving the output signal of the charge and discharge control circuit for preventing charge or discharge of the at least one secondary cell when the at least one secondary cell is in one of and overcharged and an overdischarged state; and

a low voltage detecting circuit for receiving the output signal of the charge and discharge control circuit, for detecting whether the voltage of at least one secondary cell is below a predetermined value at which charging of the secondary cell is to be prevented, the predetermined value being less than the voltage associated with an overdischarged state, and for controlling the switch circuit to prevent charging of the secondary cell.

5. A charge and discharge control circuit according to claim 4;

wherein the predetermined value is the threshold voltage of a MOS transistor, so that the low voltage detecting circuit stops charging of the secondary cell when the voltage of the secondary cell is less than the threshold voltage of the MOS transistor.

6. A charge and discharge control circuit for monitoring the voltage of a secondary cell, comprising:

a first circuit for detecting whether the voltage of the secondary cell is in an overcharged or overdischarged state, generating a first signal when the secondary cell is in an overcharged state and generating a second signal when the secondary cell is in an overdischarged state; and

a second circuit for detecting whether the voltage of the secondary cell is below the threshold voltage of a MOS transistor and generating a third signal used for controlling the charging of the secondary cell.

7. A charge and discharge control circuit according to claim 6;

wherein the second circuit generates the third signal when the voltage of the secondary cell is less than the threshold voltage of the MOS transistor, and the third signal is used for preventing the charging of the secondary cell.

8. A charge and discharge control circuit according to claim 6;

wherein the first circuit comprises a charge and discharge control circuit connected to the secondary cell and having at least one output terminal for outputting the first and second signals, the second circuit comprises a low voltage detecting circuit having a MOS transistor connected to the secondary cell so that conduction of the MOS transistor is controlled based on the voltage of the secondary cell.

9. A charge and discharge control circuit according to claim 6;

further comprising a third circuit receptive of an output of the first circuit and the second circuit for controlling a current path between the secondary cell and an output terminal so that the current path is opened when the secondary cell is in one of an overcharged state and an overdischarged state, and so that the current path is opened when the voltage of the secondary cell is below the threshold voltage of the MOS transistor to prevent charging of the secondary cell.

10. A charge and discharge control circuit according to claim 9;

wherein the third circuit comprises a switch circuit having first and second series-connected transistors, the first transistor being receptive of the first signal to open the current path when the secondary cell is in an overcharged state to prevent further charging of the secondary cell, the second transistor being receptive of the second signal to open the current path when the secondary cell is in an overdischarged state to prevent further discharge of the secondary cell, and a selected one of the first and second transistors being receptive of the third signal to open the current path when the secondary cell is below the threshold voltage of the MOS transistor to prevent charging of the secondary cell.

11. A charge and discharge control circuit according to claim 10;

wherein the selected transistor is formed with a parasitic diode which permits a current to flow therethrough when the transistor is off to permit charging of the secondary cell when the secondary cell is in an overdischarged state.

12. A charge and discharge control circuit according to claim 6;

wherein the secondary cell comprises a plurality of batteries connected in series.