Apparatus and method for filtering light in a thermal processing chamber

• US 5,960,158 A
• Filed: 07/11/1997
• Issued: 09/28/1999
• Est. Priority Date: 07/11/1997
• Status: Expired due to Term

• Current Assignee: STEAG RTP Systems, Inc. (KSBG Kommunale Beteiligungsgesellschaft GmbH & Company KG)
• Original Assignee: AG Associates Incorporated (KSBG Kommunale Beteiligungsgesellschaft GmbH & Company KG)
• Inventors: Gat, Arnon, Champetier, Robert J., Fabian, Ram Z.
• Primary Examiner(s): PELHAM, JOSEPH MOORE
• Application Number:
  US08/893,699
• Time in Patent Office: 809 Days
• Field of Search: 219/405, 219/411, 219/390, 118/50.1, 118/724, 118/725, 392/411, 392/416, 250/492.2, 250/503.1, 250/504 R, 374/123, 374/126, 374/127, 374/133
• US Class Current: 392/416
• CPC Class Codes: C30B 31/12 Heating of the reaction chamber
• CPC Class Codes: G01J 5/06 Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity for adjusting of solid angle of collected radiation G01J5/07; means for wavelength selection G01J5/0801

Abstract

The present invention is directed to an apparatus and process for filtering light in a thermal processing chamber. In particular, the apparatus of the present invention includes a first spectral filter spaced apart from a second spectral filter. The first spectral filter is spaced apart from the second spectral filter so as to define a cooling fluid channel therebetween through which a cooling fluid can be circulated. In order to prevent thermal radiation being emitted by the light source from interfering with the operation of a radiation sensing device contained in the chamber, the first spectral filter absorbs most of the thermal radiation being emitted by the light source at the operating wavelength of the radiation sensing device. The second spectral filter, on the other hand, is substantially transparent to thermal radiation at the operating wavelength of the radiation sensing device. If desired, various reflective coatings made from dielectric materials can also be applied to selected surfaces of the spectral filters to further prevent unwanted thermal radiation from being detected by the radiation sensing device and for preventing the spectral filters from increasing in temperature during operation of the chamber.

Claims

1. An apparatus for heat treating semiconductor devices comprising:

a thermal processing chamber adapted to contain a semiconductor wafer;

a light source in communication with said thermal processing chamber, said light source comprising at least one lamp for emitting light energy into said chamber;

at least one radiation sensing device extending into said thermal processing chamber, said at least one radiation sensing device being configured to sense thermal radiation at a preselected wavelength, said at least one radiation sensing device for sensing radiation being emitted by a semiconductor wafer contained within said chamber;

a first spectral filter being positioned between said light source and said at least one radiation sensing device, said first spectral filter being configured to absorb thermal radiation being emitted by said light source at said preselected wavelength for preventing said thermal radiation from being detected by said at least one radiation sensing device; and

a second spectral filter spaced apart from said first spectral filter so as to define a cooling channel therebetween, said second spectral filter being positioned between said first spectral filter and said at least one radiation sensing device, said second spectral filter being substantially transparent to thermal radiation at said preselected wavelength.

2. An apparatus as defined in claim 1, wherein said first spectral filter is made from silica having a hydroxide concentration of at least 0.1%.

3. An apparatus as defined in claim 2, wherein said at least one radiation sensing device senses thermal radiation at a wavelength of about 2.7 microns.

4. An apparatus as defined in claim 1, further comprising a cooling fluid conveying device for forcing a cooling fluid through said cooling channel.

5. An apparatus as defined in claim 4, wherein said cooling fluid conveying device is configured to force air through said cooling fluid channel.

6. An apparatus as defined in claim 4, wherein said cooling fluid is forced through said cooling fluid channel at a flow rate of at least 150 cubic feet per minute.

7. An apparatus as defined in claim 1, wherein said second spectral filter includes a first surface positioned so as to face a semiconductor wafer when said wafer is contained in said thermal processing chamber, said first surface being coated with a reflective coating, said coating reflecting thermal radiation being emitted by said semiconductor wafer at a wavelength of greater than about 4 microns for preventing said second spectral filter from increasing in temperature when said wafer is heated.

8. An apparatus as defined in claim 1, wherein said first spectral filter includes a first surface facing said second spectral filter, said first surface being coated with a reflective coating, said coating being configured to prevent thermal radiation at said preselected wavelength from being emitted by said first spectral filter towards said at least one radiation sensing device.

9. An apparatus for heat treating semiconductor devices comprising:

a thermal processing chamber adapted to contain a semiconductor wafer;

a light source in communication with said thermal processing chamber, said light source comprising at least one lamp for emitting light energy into said chamber;

at least one radiation sensing device located within said thermal processing chamber, said at least one radiation sensing device being configured to sense thermal radiation at a preselected wavelength, said at least one radiation sensing device for sensing thermal radiation being emitted by a semiconductor wafer contained within said chamber; and

a first spectral filter spaced apart from a second spectral filter so as to define a cooling fluid channel therebetween, said first and second spectral filters being positioned between said light source and said at least one radiation sensing device for preventing thermal radiation being emitted by said light source at said preselected wavelength from being detected by said at least one radiation sensing device, said first and second spectral filters being positioned such that light energy being emitted by said light source first passes through said first spectral filter and then passes through said second spectral filter, said first and second spectral filters being made of silica, said first spectral filter containing a greater concentration of hydroxide ions than said second spectral filter.

10. An apparatus as defined in claim 9, wherein said first spectral filter has a hydroxide concentration of greater than 0.1%.

11. An apparatus as defined in claim 9, further comprising a cooling fluid conveying device for forcing a cooling fluid through said cooling channel.

12. An apparatus as defined in claim 9, wherein said at least one radiation sensing device senses thermal radiation at a wavelength of about 2.7 microns.

13. An apparatus as defined in claim 9, wherein said at least one radiation sensing device comprises a pyrometer.

14. An apparatus as defined in claim 9, wherein said first spectral filter is made from a material comprising vitreous silica.

15. An apparatus as defined in claim 9, wherein said second spectral filter includes a first surface positioned so as to face a semiconductor wafer when contained in said thermal processing chamber, said first surface being coated with a reflective coating, said coating being made from a dielectric material, said coating reflecting thermal radiation being emitted by said semiconductor wafer at a wavelength of greater than about 4 microns for preventing said second spectral filter from increasing in temperature when said wafer is heated.

16. An apparatus as defined in claim 9, wherein said first spectral filter includes a first surface facing said light source and a second surface facing said second spectral filter, said second surface being coated with a reflective coating, said coating being made from a dielectric material, said coating being configured to prevent thermal radiation at a wavelength of about 2.7 microns from being emitted by said first spectral filter towards said at least one radiation sensing device.

17. An apparatus as defined in claim 10, wherein said second spectral filter has a hydroxide concentration of no more than 0.001%.

18. An apparatus for heat treating semiconductor devices comprising:

a thermal processing chamber adapted to contain a semiconductor wafer;

a light source in communication with said thermal processing chamber, said light source comprising at least one lamp for emitting light energy into said chamber;

at least one radiation sensing device located within said thermal processing chamber, said at least one radiation sensing device for sensing thermal radiation at a preselected wavelength, said at least one radiation sensing device for sensing thermal radiation being emitted by a semiconductor wafer contained within said chamber; and

a spectral filter positioned between said light source and said at least one radiation sensing device, said spectral filter being configured to substantially prevent thermal radiation being emitted by said light source at said preselected wavelength from being detected by said at least one radiation sensing device, said spectral filter including a first outer surface facing said at least one radiation sensing device, said first outer surface being coated with a reflective coating, said reflective coating being configured to reflect thermal radiation at a wavelength range different than the preselected wavelength at which said radiation sensing device operates, said wavelength range being greater than about 4 microns, said reflective coating reflecting thermal radiation being emitted by a semiconductor wafer contained in said thermal processing chamber for preventing said spectral filter from absorbing said thermal radiation and increasing in temperature.

19. An apparatus as defined in claim 18, wherein said reflective coating is made from a dielectric material.

20. An apparatus as defined in claim 18, wherein said spectral filter comprises a first filter window spaced apart from a second filter window so as to define a cooling fluid channel therebetween, said first and second filter windows being made from fused silica, said first and second filter windows being positioned such that light energy being emitted by said light source first passes through said first filter window and then through said second filter window, said first filter window containing a greater concentration of hydroxide ions than said second filter window.

21. An apparatus as defined in claim 20, further comprising a cooling fluid conveying device for forcing a cooling fluid through said cooling channel.

22. An apparatus as defined in claim 20, wherein said first filter window defines a first inner surface facing said second filter window, said first inner surface being coated with a second reflective coating, said second reflective coating being made from a dielectric material, said second reflective coating being configured to prevent thermal radiation at said preselected wavelength from being emitted by said first filter window.

23. An apparatus as defined in claim 20, wherein said spectral filter further includes a second outer surface facing said light source, said second outer surface being coated with a third reflective coating, said third reflective coating being made from a dielectric material, said third reflective coating being configured to reflect thermal radiation at a wavelength of greater than about 4 microns in order to prevent said first filter window from increasing in temperature due to thermal radiation being emitted by said light source.

24. An apparatus as defined in claim 20, wherein said second filter window defines a second inner surface facing said first filter window, said second inner surface being coated with a fourth reflective coating, said fourth reflective coating being made from a dielectric material, said fourth reflective coating being configured to reflect thermal radiation at a wavelength of greater than about 4 microns.

25. An apparatus as defined in claim 20, wherein said preselected wavelength is about 2.7 microns.

26. An apparatus for heat treating semiconductor devices comprising:

a thermal processing chamber adapted to contain a semiconductor wafer;

a light source in communication with said thermal processing chamber, said light source comprising at least one lamp for emitting light energy into said chamber;

at least one radiation sensing device located within said processing chamber, said at least one radiation sensing device for sensing thermal radiation at a preselected wavelength, said at least one radiation sensing device for sensing thermal radiation being emitted by a semiconductor wafer contained within said chamber; and

a spectral filter positioned between said light source and said at least one radiation sensing device, said spectral filter being configured to substantially prevent thermal radiation being emitted by said light source at said preselected wavelength from being detected by said at least one radiation sensing device, said spectral filter including a first surface facing said light source and a second surface facing said at least one radiation sensing device, said first surface being coated with a first reflective coating, said first reflective coating being configured to reflect thermal radiation at a wavelength greater than about 4 microns in order to prevent said spectral filter from increasing in temperature, said second surface being coated with a second reflective coating, said second reflective coating being configured to prevent thermal radiation at said preselected wavelength from being emitted by said spectral filter towards said at least one radiation sensing device.

27. An apparatus as defined in claim 26, wherein said preselected wavelength is about 2.7 microns.

28. An apparatus as defined in claim 26, wherein said first reflective coating and said second reflective coating are made from dielectric materials.

29. An apparatus as defined in claim 26, wherein said spectral filter comprises silica.

30. An apparatus as defined in claim 26, wherein said spectral filter comprises silica having a hydroxide concentration of at least 0.1%.