Process for forming a semiconductor device
DCFirst Claim
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1. A process for forming a semiconductor device comprising the steps of:
- placing a substrate onto a polishing pad within an apparatus, wherein a layer overlies the substrate;
polishing the layer and conditioning the polishing pad using a first conditioner during a first time period;
polishing the layer without conditioning the polishing pad using the first conditioner for a second time period after the first time period and before depositing an additional layer; and
removing the substrate from the apparatus after the steps of polishing.
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Abstract
A process for conditioning a polishing pad has been developed that incorporates in-situ conditioning where the conditioning is performed while the substrate (27, 40) is on the polishing pad (22) but terminates before the polishing of the substrate (27, 40) is completed. In one embodiment, ex-situ conditioning of the polishing pad (22) is used on the polishing pad between substrates (27, 40). The process has benefits of both in-situ and ex-situ conditioning.
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Citations
25 Claims
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1. A process for forming a semiconductor device comprising the steps of:
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placing a substrate onto a polishing pad within an apparatus, wherein a layer overlies the substrate; polishing the layer and conditioning the polishing pad using a first conditioner during a first time period; polishing the layer without conditioning the polishing pad using the first conditioner for a second time period after the first time period and before depositing an additional layer; and removing the substrate from the apparatus after the steps of polishing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process for forming a semiconductor device comprising the steps of:
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conditioning a polishing pad using a first conditioner; placing a substrate onto a polishing pad within an apparatus, wherein a layer overlies the substrate after the step of conditioning; polishing the layer and conditioning the polishing pad using a second conditioner during a first time period; polishing the layer without conditioning the polishing pad for a second time period after the first time period and before depositing an additional layer; and removing the substrate from the apparatus after the steps of polishing. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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21. A process for forming a semiconductor device comprising the steps of:
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placing a substrate onto a polishing pad within an apparatus, wherein a layer overlies the substrate; polishing the layer and conditioning the polishing pad using a first conditioner during a first time period, wherein the conditioning is performed using a first conditioning parameter having a first type and a first value; polishing the layer and conditioning the polishing pad using the first conditioner during a second time period after the first time period, wherein; the conditioning is performed using a second conditioning parameter having a second type and second value that is different from the first value; and the substrate remains on the polishing pad between the first time period and the second time period; and removing the substrate from the apparatus after the steps of polishing. - View Dependent Claims (22, 23, 24, 25)
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Specification