Metal semiconductor optical device
First Claim
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1. A metal semiconductor optical device having a junction structure consisting of a semiconductor substrate and a metal thin film, including:
- a layer functioning as an interface single atomic layer formed between the semiconductor substrate and the metal thin film, wherein said interface single atomic layer comprises any one of elements of group V.
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Abstract
The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energy state occurring between the metal thin film and the semiconductor, to thereby enhance the optical absorption efficiency of light beam. The interface single atomic layer is formed by one of the group V elements, e.g., one of antimony(Sb) or arsenic(As). Additionally, the metal thin film has a thickness of approximately 30 Å.
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Citations
3 Claims
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1. A metal semiconductor optical device having a junction structure consisting of a semiconductor substrate and a metal thin film, including:
a layer functioning as an interface single atomic layer formed between the semiconductor substrate and the metal thin film, wherein said interface single atomic layer comprises any one of elements of group V. - View Dependent Claims (2, 3)
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