Pane of transparent material having a low emissivity
First Claim
1. Pane of transparent material with a substrate and a layer system provided on one side of the substrate, wherein said layer system comprises(a) a first layer selected from at least one of ZnO, SnO2, In2 O3, Bi2 O3, TiO2, ZrO2, Ta2 O5, SiO2, Al2 O3, or selected from one at least one of AlN or Si3 N, or selected from at least one of the oxynitrides of aluminum, titanium, zirconium, and silicon, is deposited in a thickness of 20-70 nm on the substrate;
- (b) a second layer comprises at least one oxide selected from the group consisting of Ta2 Ox and a mixture comprising ZnOx and TaOx in a thickness of 1 to 9 nm in the first layer wherein X is a number that results in a substoichiometric ratio of oxygen to either Zn or Ta;
(c) a third layer selected from at least one of Ag and Cu is applied in a thickness of 5-30 nm on the second layer;
(d) a fourth layer of at least one of the metals Ti, Cr, and Nb, or an alloy with at least 15 atom % of one of Ti, Cr, and Nb is deposited on said third layer as one of a metal layer or a substoichiometric metal oxide layer in a thickness of 0.5-5 nm, and(e) a fifth layer selected from at least one of ZnO, SnO2, In3 O3, Bi2 O3, TiO2, ZrO2, Ta2 O5, SiO2, Al2 O3, or selected from one at least one of AlN or Si3 N, or selected from at least one of the oxynitrides of aluminum, titanium, zirconium, and silicon is deposited in a thickness of 20-70 nm on the substrate is deposited on said fourth layer.
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Abstract
A system of layers applied to a transparent substrate includes a first layer of an oxide such as ZnO or SnO2, a second layer of a substoichiometric oxide of Zn or Ta, a third layer of Ag or Cu, a fourth layer of a substoichiometric oxide of Ti, Cr, or Nb, and a fifth layer of similar composition as the first layer. The layers are preferably deposited by magnetron cathode sputtering in an atmosphere which consists of inert gas and, in the case of the oxide layers, a reactive gas.
85 Citations
10 Claims
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1. Pane of transparent material with a substrate and a layer system provided on one side of the substrate, wherein said layer system comprises
(a) a first layer selected from at least one of ZnO, SnO2, In2 O3, Bi2 O3, TiO2, ZrO2, Ta2 O5, SiO2, Al2 O3, or selected from one at least one of AlN or Si3 N, or selected from at least one of the oxynitrides of aluminum, titanium, zirconium, and silicon, is deposited in a thickness of 20-70 nm on the substrate; -
(b) a second layer comprises at least one oxide selected from the group consisting of Ta2 Ox and a mixture comprising ZnOx and TaOx in a thickness of 1 to 9 nm in the first layer wherein X is a number that results in a substoichiometric ratio of oxygen to either Zn or Ta; (c) a third layer selected from at least one of Ag and Cu is applied in a thickness of 5-30 nm on the second layer; (d) a fourth layer of at least one of the metals Ti, Cr, and Nb, or an alloy with at least 15 atom % of one of Ti, Cr, and Nb is deposited on said third layer as one of a metal layer or a substoichiometric metal oxide layer in a thickness of 0.5-5 nm, and (e) a fifth layer selected from at least one of ZnO, SnO2, In3 O3, Bi2 O3, TiO2, ZrO2, Ta2 O5, SiO2, Al2 O3, or selected from one at least one of AlN or Si3 N, or selected from at least one of the oxynitrides of aluminum, titanium, zirconium, and silicon is deposited in a thickness of 20-70 nm on the substrate is deposited on said fourth layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification