Laterally disposed nanostructures of silicon on an insulating substrate

• US 5,962,863 A
• Filed: 09/13/1995
• Issued: 10/05/1999
• Est. Priority Date: 09/09/1993
• Status: Expired due to Term

• Current Assignee: The Government Of The United States As Represented By The Secretary Of The Navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Russell, Stephen D., Katz, Andrew S., de la Houssaye, Paul R., Shimabukuro, Randy L., Dubbelday, Wadad B., Dynes, Robert C.
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US08/528,386
• Time in Patent Office: 1,483 Days
• Field of Search: 257/14, 257/99, 257/103, 257/79, 257/22, 257/9
• US Class Current: 257/14
• CPC Class Codes: H01L 31/02322 comprising luminescent members, e.g. fluorescent sheets upon the device
• CPC Class Codes: H01L 33/346 containing porous silicon
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: Y10S 438/962 Quantum dots and lines

Abstract

A single crystal silicon film nanostructure capable of optical emission is laterally disposed on an insulating transparent substrate of sapphire. By laterally disposing the nanostructure, adequate support for the structure is provided, and the option of fabricating efficient electrical contact structures to the nanostructure is made possible. The method of the invention begins with the deposition of ultrathin layers of silicon on the substrate. A Solid Phase Epitaxy improvement process is then used to remove crystalline defects formed during the deposition. The silicon is then annealed and thinned using thermal oxidation steps to reduce its thickness to be on the order of five nanometers in height. The width and length of the nanostructure are defined by lithography. The nanometer dimensioned silicon is then spin-coated with a resist with width and length definition in the resist being performed by way of electron beam exposure. The photoresist is developed and the e-beam written pattern is transferred to the silicon by etching. Oxidations and etchings may subsequently be employed to further thin the width of the nanostructure to be on the order of two to three nanometers. The single crystal, silicon-based nanostructures can be made an integral part of silicon-based photo, electroluminescent, and quantum-effect devices all of which are compatible with current silicon manufacturing techniques and with other silicon-based microelectronics.

Claims

1. An apparatus comprising:

a transparent substrate; and

a silicon structure disposed on said transparent substrate, said silicon structure having a height lying in the range of 1-100 nanometers;

a width lying in the range of 1-100 nanometers; and

a length at least as long as the greater of the height and width of said silicon structure, said silicon structure disposed so that an area created by its length and width lies adjacent said transparent substrate.

2. An apparatus according to claim 1 in which said silicon structure can optically emit.

3. An apparatus according to claim 1 in which said transparent substrate is an insulator.

4. An apparatus according to claim 3 in which said silicon structure can optically emit.

5. An apparatus according to claim 3 in which said transparent substrate is a sapphire substrate.

6. An apparatus according to claim 5 in which said silicon structure can optically emit.

7. An apparatus according to claim 5 in which said transparent sapphire substrate has a 1102 crystal plane.

8. An apparatus according to claim 7 in which said silicon structure is single crystal silicon.

9. An apparatus according to claim 1 in which said transparent substrate is selected from a material of the group consisting of:

sapphire, glass, quartz, fused silica, spinel, magnesium oxide, magnesium fluoride, diamond, yttria-stabilized zirconium (YSZ), ruby (chromed doped sapphire Cr;

Al₂ O₃), and yttria alumina garnet (YAG).

10. An apparatus according to claim 1 in which said silicon structure is selected from a silicon crystal group consisting of:

single crystal silicon;

polycrystalline silicon; and

amorphous silicon.

11. An apparatus according to claim 9 in which said silicon structure is selected from a silicon crystal group consisting of:

single crystal silicon;

polycrystal silicon; and

amorphous silicon.

12. An apparatus according to claim 1 in which said silicon structure is selected from a material of the group consisting of:

pure silicon;

silicon alloyed with carbon;

silicon alloyed with germanium;

silicon alloyed with tin;

silicon containing an acceptor impurity;

silicon containing a donor impurity; and

silicon containing a combination of acceptor and donor impurities.

13. An apparatus according to claim 1 further including electrically conducting pads operably coupled to said silicon structure.

14. An apparatus according to claim 1 in which said silicon structure is operably coupled to any of the group consisting of:

insulators, semiconductors, metals, electronic devices, electronic circuits, optical devices, optical circuits, electro-mechanical devices, electro-mechanical circuits, electro-optical devices and electro-optical circuits.

15. An apparatus comprising:

a transparent insulating sapphire substrate having a 1102 crystal plane; and

an optically emissive single crystal silicon structure disposed on said 1102 crystal plane of said transparent substrate, said silicon structure having a height lying in the range of 1-100 nanometers;

a width lying in the range of 1-100 nanometers; and

a length at least as long as the greater of the height and width of said silicon structure, said silicon structure disposed so that an area created by its length and width lies adjacent said transparent substrate.

16. An apparatus according to claim 15 further including electrically conducting pads operably coupled to said silicon structure.

17. An apparatus according to claim 15 in which said silicon structure is operably coupled to any of the group consisting of:

insulators, semiconductors, metals, electronic devices, electronic circuits, optical devices, optical circuits, electro-mechanical devices, electro-mechanical circuits, electro-optical devices and electro-optical circuits.

18. An apparatus comprising:

a silicon structure disposed on a transparent substrate, said silicon structure having a portion thereof of a dimension that permits said portion to exhibit a quantum effect, in which said portion has a surface in contact with said transparent substrate and in which said portion extends above said transparent substrate a distance no greater than any dimension of said surface that is in contact with said transparent substrate.

19. An apparatus according to claim 18 in which said silicon structure can optically emit.

20. An apparatus according to claim 18 in which said transparent substrate is an insulator.

21. An apparatus according to claim 20 in which said silicon structure can optically emit.

22. An apparatus according to claim 20 in which said transparent substrate is a sapphire substrate.

23. An apparatus according to claim 22 in which said silicon structure can optically emit.

24. An apparatus according to claim 22 in which said transparent sapphire substrate has a 1102 crystal plane.

25. An apparatus according to claim 24 in which said silicon structure is single crystal silicon.

26. An apparatus according to claim 18 in which said transparent substrate is selected from a material of the group consisting of:

sapphire, glass, quartz, fused silica, spinel, magnesium oxide, magnesium fluoride, diamond, yttria-stabilized zirconium (YSZ), ruby (chromed doped sapphire Cr;

Al₂ O₃), and yttria alumina garnet (YAG).

27. An apparatus according to claim 26 in which said in which said silicon structure is selected from a silicon crystal group consisting of:

single crystal silicon;

polycrystalline silicon; and

amorphous silicon.

28. An apparatus according to claim 18 in which said in which said silicon structure is selected from a silicon crystal group consisting of:

single crystal silicon;

polycrystalline silicon; and

amorphous silicon.

29. An apparatus according to claim 18 in which said silicon structure is selected from a material of the group consisting of:

pure silicon;

silicon alloyed with carbon;

silicon alloyed with germanium;

silicon alloyed with tin;

silicon containing an acceptor impurity;

silicon containing a donor impurity; and

silicon containing a combination of acceptor and donor impurities.

30. An apparatus according to claim 18 further including electrically conducting pads operably coupled to said silicon structure.

31. An apparatus according to claim 18 in which said silicon structure is operably coupled to any of the group consisting of:

insulators, semiconductors, metals, electronic devices, electronic circuits, optical devices, optical circuits, electro-mechanical devices, electro-mechanical circuits, electro-optical devices and electro-optical circuits.