Low voltage triggering electrostatic discharge protection circuit
First Claim
1. An electrostatic discharge protection circuit, comprising:
- a semiconductor layer of a first conductivity type;
a floating semiconductor layer of a second conductivity type in contact with said semiconductor layer of a first conductivity type to establish a junction therebetween;
a first doped region of the first conductivity type formed in said semiconductor layer of a second conductivity type and connected to a first node;
a first doped region of the second conductivity type formed in said semiconductor layer of a first conductivity type and connected to a second node;
a second doped region of the second conductivity type spanning said junction;
a gate structure overlying a portion of said semiconductor layer of a first conductivity type between said doped regions of the second conductivity type; and
a second doped region of the first conductivity type formed in said semiconductor layer of a first conductivity type and connected to said second node;
wherein said second doped region of the second conductivity type enters breakdown to trigger the conduction of a discharge current flowing through said junction when electrostatic discharge stress occurs between said first node and said second node.
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Accused Products
Abstract
An electrostatic discharge protection circuit comprises a semiconductor layer of a first conductivity type, a floating semiconductor layer of a second conductivity type, a first doped region of the first conductivity type, a first doped region of the second conductivity type, a second doped region of the second conductivity type, a gate structure, and a second doped region of the first conductivity type. The floating semiconductor layer of a second conductivity type is in contact with the semiconductor layer of a first conductivity type to establish a junction therebetween. The first doped region of the first conductivity type is formed in the semiconductor layer of a second conductivity type and connected to a first node. The first doped region of the second conductivity type is formed in the semiconductor layer of a first conductivity type and connected to a second node. The second doped region of the second conductivity type spans the junction. The gate structure overlies a portion of the semiconductor layer of a first conductivity type between those doped regions of the second conductivity type. The second doped region of the first conductivity type is formed in the semiconductor layer of a first conductivity type and connected to the second node. The second doped region of the second conductivity type will break down to trigger the conduction of a discharge current flowing through the junction when electrostatic discharge stress occurs between the first node and the second node.
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Citations
20 Claims
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1. An electrostatic discharge protection circuit, comprising:
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a semiconductor layer of a first conductivity type; a floating semiconductor layer of a second conductivity type in contact with said semiconductor layer of a first conductivity type to establish a junction therebetween; a first doped region of the first conductivity type formed in said semiconductor layer of a second conductivity type and connected to a first node; a first doped region of the second conductivity type formed in said semiconductor layer of a first conductivity type and connected to a second node; a second doped region of the second conductivity type spanning said junction; a gate structure overlying a portion of said semiconductor layer of a first conductivity type between said doped regions of the second conductivity type; and a second doped region of the first conductivity type formed in said semiconductor layer of a first conductivity type and connected to said second node; wherein said second doped region of the second conductivity type enters breakdown to trigger the conduction of a discharge current flowing through said junction when electrostatic discharge stress occurs between said first node and said second node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An electrostatic discharge protection circuit, comprising:
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a P-type semiconductor layer; a floating N-type semiconductor layer in contact with said P-type semiconductor layer to establish a junction therebetween; a first P-type doped region formed in said N-type semiconductor layer and connected to a first node; a first N-type doped region formed in said P-type semiconductor layer and connected to a second node; a second N-type doped region spanning said junction; a gate structure overlying a portion of said P-type semiconductor layer between said N-type doped regions; and a second P-type doped region formed in said P-type semiconductor layer and connected to said second node. - View Dependent Claims (12, 13, 14, 15)
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16. An electrostatic discharge protection circuit, comprising:
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a silicon-controlled rectifier connected between a first node and a second node, said silicon-controlled rectifier having a floating well formed in a semiconductor substrate to establish a junction therebetween; and a MOS device connected in parallel to said silicon-controlled rectifier, said MOS transistor having one source/drain region spanning said junction; said MOS device entering breakdown to trigger said silicon-controlled rectifier conducting a discharge current when an electrostatic discharge potential occurs between said first node and said second node. - View Dependent Claims (17, 18, 19, 20)
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Specification