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Low voltage triggering electrostatic discharge protection circuit

  • US 5,962,876 A
  • Filed: 04/06/1998
  • Issued: 10/05/1999
  • Est. Priority Date: 04/06/1998
  • Status: Expired due to Fees
First Claim
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1. An electrostatic discharge protection circuit, comprising:

  • a semiconductor layer of a first conductivity type;

    a floating semiconductor layer of a second conductivity type in contact with said semiconductor layer of a first conductivity type to establish a junction therebetween;

    a first doped region of the first conductivity type formed in said semiconductor layer of a second conductivity type and connected to a first node;

    a first doped region of the second conductivity type formed in said semiconductor layer of a first conductivity type and connected to a second node;

    a second doped region of the second conductivity type spanning said junction;

    a gate structure overlying a portion of said semiconductor layer of a first conductivity type between said doped regions of the second conductivity type; and

    a second doped region of the first conductivity type formed in said semiconductor layer of a first conductivity type and connected to said second node;

    wherein said second doped region of the second conductivity type enters breakdown to trigger the conduction of a discharge current flowing through said junction when electrostatic discharge stress occurs between said first node and said second node.

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