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Metal-to-metal via-type antifuse

  • US 5,962,910 A
  • Filed: 07/17/1997
  • Issued: 10/05/1999
  • Est. Priority Date: 10/04/1995
  • Status: Expired due to Term
First Claim
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1. A programmed antifuse disposed in an integrated circuit comprising:

  • a lower conductive layer formed of a film of material including aluminum;

    a lower barrier metal layer disposed over and in electrical contact with said lower conductive layer, said lower barrier metal layer formed of TiN and having a first minimum thickness of greater than 2000 Å

    ;

    an antifuse material layer disposed over and in contact with said lower barrier metal layer;

    an upper barrier metal layer disposed over and in contact with said antifuse material layer, said upper barrier metal layer formed of TiN and having a second minimum thickness, said second minimum thickness being in the range of 1000 Å

    -2000 Å

    ;

    an upper conductive layer formed of a film of material including aluminum, said film disposed over and in electrical contact with said upper barrier metal layer; and

    a conductive link located within said antifuse material layer and electrically connecting said lower barrier metal layer and said upper barrier metal layer, said conductive link comprising substantially no aluminum metal.

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