Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches

• US 5,962,923 A
• Filed: 08/07/1995
• Issued: 10/05/1999
• Est. Priority Date: 08/07/1995
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Xu, Zheng, Forster, John, Yao, Tse-Yong
• Primary Examiner(s): Saadat, Mahshid
• Assistant Examiner(s): Wilson, Allan R.
• Application Number:
  US08/511,825
• Time in Patent Office: 1,520 Days
• Field of Search: 257/739, 257/740, 257/750, 257/751, 257/753, 257/763, 257/764, 257/770, 257/773, 257/774
• US Class Current: 257/774
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/046 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 14/0641 Nitrides C23C14/0617 takes precedence
• CPC Class Codes: C23C 14/14 Metallic material, boron or silicon
• CPC Class Codes: C23C 14/32 by explosion; by evaporation and subsequent ionisation of the vapours , e.g. ion-platingC23C14/34 - C23C14/48 take precedence
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/358 Inductive energy
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: H01J 2237/32 Processing objects by plasma generation
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 21/76876 for deposition from the gas phase, e.g. CVD
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76882 : Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: H01L 23/485 : consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/5226 : Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53223 : Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53233 : Copper alloys
• CPC Class Codes: H01L 23/53238 : Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact. The carrier layer preferably comprises a layer formed by ionizing the flux of sputter deposition maternal partially reacting the flux with a gas, and depositing the resulting material on a substrate.

Claims

1. An electrical contact structure in a multilayer integrated circuit, wherein an aspect ratio of an aperture within which said electrical contact is formed exceeds 1:

1, and wherein a width dimension of said aperture is approxinately 0.5μ

or smaller, said electrical contact structure comprising;

an aperture sidewall lining composed of a carrier layer having a surface roughness of less than 40 Å

; and

a conductor deposited over said carrier layer and reflowed to fill said aperture.

2. The contact structure of claim 1, wherein at least a portion of said carrier layer is a deposit from a sputtered and ionized refractory metal.

3. The contact structure of claim 2, wherein said carrier layer also includes, in part, a refractory metal compound.

4. The contact structure of claim 1, wherein said carrier layer includes a first sub-layer deposit applied over said aperture sidewall surface, at least a portion of which is a deposit from a sputtered and ionized refractory metal;

an overlying second sub-layer deposit, from a sputtered and ionized refractory metal reacted with a gas; and

an overlying surface layer deposit, from a sputtered and ionized refractory metal.

5. The contact structure of claim 1, wherein said carrier layer includes at least two sub-layers, and the outermost surface of said carrier layer comprises a deposit from a sputtered and ionized refractory metal.

6. The contact structure of claim 4 or claim 5, wherein said surface of said carrier layer comprises a deposit which is a reaction product of an ionized refractory metal and a reactive gas, wherein said reaction product contains less than about 10% by weight of said reactive gas.

7. The contact structure of claim 6, wherein said refractory metal is titanium.

8. The contact structure of claim 7, wherein said reactive gas is nitrogen.

9. The contact structure of claim 1, wherein said carrier layer provides a barrier layer.

10. The contact structure of claim 1, wherein said carrier layer is a wetting layer.

11. The contact structure of claim 2, wherein said deposited carrier layer is comprised of densely packed material having a generally longitudinal grain structure oriented essentially perpendicular to said aperture sidewall to improve the flow of conductive materials applied thereover.

12. The contact structure of claim 1 or claim 2, or claim 3, or claim 4, or claim 5, or claim 9, or claim 10, or claim 11, wherein said conductor is aluminum.

29. The electrical contact structure of claim 2, or claim 3, or claim 4, or claim 5, wherein said sputtered and ionized material is ionized in an amount ranging from greater than about 10% up to 100% prior to deposition.

13. A carrier layer on the surface of an aperture sidewall which enables the fabrication of an electrical contact in said aperture, wherein an aspect ratio of said electrical contact exceeds 1:

1 and a feature size of said contact is about 0.5μ

or less, said carrier layer comprising at least one layer of a sputtered deposit, comprising a refractory metal, a first component of which has been ionized, at least in part, prior to deposition thereof on a surface of said sidewall and a second component which is the reaction product of said first component and a gas.

14. The carrier layer of claim 13, wherein said first component is titanium and said gas is nitrogen.

15. The carrier layer of claim 13, wherein the carrier layer provides a barrier layer.

30. The carrier layer of claim 13 or claim 14, wherein said material which has been ionized at least in part is ionized in an amount ranging from greater than about 10% up to 100% prior to deposition.

16. An electrical contact structure in a multilayered integrated circuit, wherein an aspect ratio of said electrical contact structure exceeds 1:

1 and a width dimension of said structure on which said aspect ratio is based is about 0.5μ

or smaller, said electrical contact structure comprising;

(a) at least one carrier layer deposited from a sputtered refractory metal compound of which 10% by weight or more has been ionized before deposition on a sidewall of said contact structure; and

(b) at least one layer of conductive material applied over a surface of said carrier layer and reflowed to fill said contact.

17. The electrical contact structure of claim 16 wherein said conductive material is a sputter-deposited material.

18. An electrical contact structure in a multilayered integrated circuit, wherein an aspect ratio of said electrical contact structure exceeds 1:

1, and a width dimension of said structure on which said aspect ratio is based is about 0.5μ

or smaller, said electrical contact structure comprising;

a) at least one first layer deposited from a sputtered refractory metal, at least 10% by weight of which is ionized prior to deposition on a sidewall of said contact structure;

b) at least one second layer comprising a sputtered refractory metal compound deposited from a refractory metal, at least 10% by weight of which is ionized and is reacted with a gas before deposition upon a surface of said first layer;

c) at least one third layer deposited from a sputtered refractory metal, wherein at least 10% by weight of said refractory metal is ionized before deposition upon a surface of said second layer; and

d) at least one layer of conductive material applied over a surface of said third layer.

19. The electrical contact structure of claim 18, wherein said refractory metal is titanium, said gas is nitrogen, and said conductive material is aluminum or an aluminum alloy.

20. The electrical contact structure of claim 19, wherein said conductive material is sputter-deposited aluminum or aluminum alloy.

31. The electrical contact structure of claim 20, wherein said aluminum or aluminum alloy deposit is formed from aluminum or aluminum alloy ionized in an amount ranging from greater than about 10% up to 100% prior to deposition.

21. A basic carrier layer deposited on a sidewall of an electrical contact stricture and having a surface roughness of less than about 40 Å

, wherein the aspect ratio of the electrical contact structure exceeds 1;

1 and wherein a contact structure width dimension on which said aspect ratio is based is 0.5μ

or smaller, said carrier layer including at least one layer deposited from a sputtered refractory metal, at least about 10% by weight of which is ionized prior to the deposition on said sidewall.

22. The carrier layer of claim 21 including at least one second layer applied upon a surface of said basic carrier layer, said second layer comprising a sputtered refractory metal, at least about 10% by weight of which is ionized and at least a portion of which is reacted with alas prior to deposition.

23. The carrier layer of claim 22, wherein said second layer comprises both a refractory metal compound and a refractory metal.

24. The carrier layer of claim 23, wherein said refractory metal compound is titanium nitride.

25. The carrier layer of claim 24, wherein said refractory metal is titanium.

26. The carrier layer of claim 21, wherein a layer of a refractory metal or a refractory metal compound underlies said basic carrier layer.

27. The carrier layer of claim 26, wherein the thickness of said underlying refractory metal or refractory metal compound ranges from about 30 Å

to about 140 Å

.

28. A carrier layer on the surface of an aperture sidewall which enables the fabrication of an electrical contact in a multilayer integrated circuit, wherein an aspect ratio of said electrical contact exceeds 1:

1 and a feature size of said contact is about 0.5μ

or less, said carrier layer comprising at least one layer which is a deposit of sputtered refractory-metal-comprising material ionized in an amount ranging from greater than about 10% up to 100% by weight prior to deposition.