CMOS reference voltage generator

• US 5,963,083 A
• Filed: 04/28/1998
• Issued: 10/05/1999
• Est. Priority Date: 04/28/1998
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Werner, Wayne E., Kothandaraman, Makeshwar, Morris, Bernard Lee, Patel, Bijit Thakorbhai
• Primary Examiner(s): KIM, JUNG H
• Application Number:
  US09/067,818
• Time in Patent Office: 525 Days
• Field of Search: 327/309, 327/530, 327/540, 327/541, 327/543, 327/545, 365/226, 365/229, 365/189.09
• US Class Current: 327/545
• CPC Class Codes: G05F 3/247 producing a voltage or current as a predetermined function of the supply voltage

Abstract

A CMOS voltage generator for providing a reference voltage VDD2 that will track the low level power supply voltage VDD (approximately 3.0V-3.6V) as long as the power supply is present. When VDD is not present (defined as at "hot pluggable" condition), the voltage generator is configured to maintain a "protection" output voltage less than the relatively high voltage (approximately 5V) that may appear along a circuit signal bus. In particular, the circuit includes at least a pair of diode-connected N-channel devices disposed between the signal bus line and the output voltage terminal to provide the necessary protection.

Claims

1. An integrated circuit including a CMOS reference voltage generator for providing an output voltage at an output voltage terminal VDD2 as a function of an input power supply voltage (VDD) and an input signal voltage level at an input signal voltage terminal (PAD), the CMOS generator comprising

a first P-channel device coupled at its source to input power supply VDD;

a first N-channel device coupled at its source to ground potential (VSS) and having its gate held at the input power supply VDD, the drain of said first N-channel device coupled to the gate input of the first P-channel device;

a second P-channel device having its gate held at the input power supply VDD and coupled at its drain to the gate of the first P-channel device, the source of said second P-channel device coupled to the drain of the first P-channel device, this coupling defining the output voltage terminal VDD2;

a third P-channel device having its gate held at the input power supply VDD and its drain coupled to ground potential, the source of the third P-channel device coupled to the output voltage terminal, wherein the output voltage at VDD2 is approximately equal to the supply voltage VDD as long as VDD is present; and

at least one diode-connected N-channel device coupled between the output terminal and the input signal voltage terminal PAD, each diode-connected device providing a predetermined voltage drop Vd between the input signal voltage level and the voltage appearing at the output terminal VDD2, wherein the output voltage at VDD2 is approximately equal to the input signal voltage level, minus each predetermined voltage drop, when the input supply voltage VDD is not present.

2. An integrated circuit including a voltage generator as defined in claim 1 wherein the at least one diode-connected N-channel device comprises a pair of N-channel devices.

3. An integrated circuit including a voltage generator as defined in claim 1 wherein the at least one diode-connected N-channel device comprises a set of three N-channel devices.

4. An integrated circuit including a voltage generator as defined in claim 1 wherein the voltage generator further comprises a resistance means coupled between the at least one diode-connected N-channel device and the input signal terminal.

5. An integrated circuit including a voltage generator as defined in claim 1 wherein the voltage generator is capable of producing a second output voltage VD2P that is approximately one P-channel threshold voltage less than the output voltage at VDD2, the generator further comprising

a fourth P-channel device diode-connected between the output terminal and source of the third P-channel device, wherein the P-channel threshold voltage is the threshold voltage of the fourth P-channel device;

a second N-channel device connected at its drain to the diode connection of the fourth P-channel device and having its source coupled to the drain of the third P-channel device, wherein a biasing current is applied as an input to the gate of the second N-channel device; and

a diode coupled across the source and drain of the third P-channel device.

6. An integrated circuit including a backgate reference voltage generator comprising

a first P-channel device coupled at its gate to an input signal voltage level at an input signal voltage terminal (PAD);

a second P-channel device coupled at its drain to the input signal voltage level, the source of the second P-channel device coupled to the drain of the first P-channel device, wherein the gate of the second P-channel device and the source of the first P-channel device are coupled to an output voltage at an output voltage terminal VDD2, where the output voltage is generated within a VDD2 generator comprising

a third P-channel device coupled at its source to input power supply VDD;

a first N-channel device coupled at its source to ground potential (VSS) and having its gate held at the input power supply VDD, the drain of said first N-channel device coupled to the gate input of the third P-channel device;

a fourth P-channel device having its gate held at the input power supply VDD and coupled at its drain to the gate of the third P-channel device, the source of said fourth P-channel device coupled to the drain of the third P-channel device, this coupling defining the output voltage terminal VDD2;

a fifth P-channel device having its gate held at the input power supply VDD and its drain coupled to ground potential, the source of the fifth P-channel device coupled to the output voltage terminal, wherein the output voltage at VDD2 is approximately equal to the supply voltage VDD as long as VDD is present; and

at least one diode-connected N-channel device coupled between the output terminal and the input signal voltage terminal PAD, each diode-connected device providing a predetermined voltage drop Vd between the input signal voltage level and the voltage appearing at the output terminal VDD2, wherein the output voltage at VDD2 is approximately equal to the input signal voltage level, minus each predetermined voltage drop, when the input supply voltage VDD is not present,

wherein the drain of the first P-channel device provides an output voltage VFLT for application to N-tub backgates of P-channel transistors.