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Infrared imager using room temperature capacitance sensor

  • US 5,965,886 A
  • Filed: 03/14/1997
  • Issued: 10/12/1999
  • Est. Priority Date: 03/27/1996
  • Status: Expired due to Term
First Claim
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1. A transducer formed on a monolithic semiconductor integrated circuit substrate that contains an intergrated circuit comprising:

  • a first electrically conductive plate formed on the substrate substantially parallel to a second electrically conductive plate along the xy plane;

    a dielectric layer formed on the first plate, the first and second electrically conductive plates and the dielectric layer forming a capacitor;

    a bi-material element comprising a top layer and a bottom layer; and

    a support element having a first side which is coupled to said bi-material element and a second side which is coupled to the substrate, the support element anchoring the bi-material element and the second electrically conductive plate to the substrate,wherein the bi-material element and the second electrically conductive plate form a deflectable member.

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